JPS647540A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS647540A
JPS647540A JP16112287A JP16112287A JPS647540A JP S647540 A JPS647540 A JP S647540A JP 16112287 A JP16112287 A JP 16112287A JP 16112287 A JP16112287 A JP 16112287A JP S647540 A JPS647540 A JP S647540A
Authority
JP
Japan
Prior art keywords
wiring layers
layers
windows
upper wiring
way
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16112287A
Other languages
Japanese (ja)
Inventor
Hirochika Ichihashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16112287A priority Critical patent/JPS647540A/en
Publication of JPS647540A publication Critical patent/JPS647540A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To make possible air insulation by a method wherein upper wiring layers are formed in such a way that the upper wiring layers are supported by bed parts exposed in windows and a resin layer is removed to make an air insulation part interpose between the upper wiring layers and lower wiring layers. CONSTITUTION:A resin layer 4 is arranged as a removable substance layer in such a way as to cover bed parts 2, by which upper wiring layers 11 are supported, and moreover, in a space, which is intended as an air insulation part; windows 5 are formed on the removable substance layer 4 at the parts of the layers 11 to need a support from their lower sides; the bed parts 2 under the windows are exposed; and the layers 11 are formed in such a way that the layers 11 are embedded in the windows 5. After that, a series of processes for removing the removable substance layer 4 are combined. The wiring layers of an arbitrary pattern are formed in such a way, the strength of the upper wiring layers, which are each used as a floating structure, is reinforced by the bed parts 2 and a multilayer interconnection, wherein the deterioration of insulation properties due to a change of a dielectric constant is not generated, is manufactured. Thereby, an inter-wiring insulating structure through air insulation can be obtained.
JP16112287A 1987-06-30 1987-06-30 Manufacture of semiconductor device Pending JPS647540A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16112287A JPS647540A (en) 1987-06-30 1987-06-30 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16112287A JPS647540A (en) 1987-06-30 1987-06-30 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS647540A true JPS647540A (en) 1989-01-11

Family

ID=15729020

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16112287A Pending JPS647540A (en) 1987-06-30 1987-06-30 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS647540A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004266244A (en) * 2002-09-13 2004-09-24 Rohm & Haas Electronic Materials Llc Air gap formation

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5448181A (en) * 1977-09-26 1979-04-16 Hitachi Ltd Multi-layer electrode wiring and its forming method
JPS57133648A (en) * 1981-02-12 1982-08-18 Nec Corp Integrated circuit device
JPS60244045A (en) * 1984-05-18 1985-12-03 Hitachi Ltd Semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5448181A (en) * 1977-09-26 1979-04-16 Hitachi Ltd Multi-layer electrode wiring and its forming method
JPS57133648A (en) * 1981-02-12 1982-08-18 Nec Corp Integrated circuit device
JPS60244045A (en) * 1984-05-18 1985-12-03 Hitachi Ltd Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004266244A (en) * 2002-09-13 2004-09-24 Rohm & Haas Electronic Materials Llc Air gap formation

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