JPS6473867A - Infrared detector - Google Patents
Infrared detectorInfo
- Publication number
- JPS6473867A JPS6473867A JP62230254A JP23025487A JPS6473867A JP S6473867 A JPS6473867 A JP S6473867A JP 62230254 A JP62230254 A JP 62230254A JP 23025487 A JP23025487 A JP 23025487A JP S6473867 A JPS6473867 A JP S6473867A
- Authority
- JP
- Japan
- Prior art keywords
- devices
- amplifiers
- amplifier
- constitution
- mos
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To improve injection efficiency and to suppress a dark current from being increased, by constituting a device in such a way that the potential of a MOS type signal processing circuit is positively fed back to the substrate potential of a photovoltaic type(PV) infrared detecting device by using an amplifier. CONSTITUTION:Plural pairs of coarse consisting of a MOS transistor 2, the amplifier 3, and the PV device 4 are constituted in array shape. The MOS transistors 21-23, the amplifiers 31-33, and a CCD 10 are provided on a substrate 11 made of, for example, an Si(silicon), and the PV devices 41-43 are provided on an insulating plate 5. In such a case, the PV devices 41-43 are separated electrically and formed by a working technique such as ion milling, etc. The connection of the PV devices 41-43 to the amplifiers 31-33 and the MOS transistors 21-23 is performing by wire bonding, etc. By employing such constitution, it is possible to reduce the dark current even when a contact part 8 is provided in an area from a pn<+> joint interface 6a to the diffusion length of a few number of carriers.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62230254A JPH07120816B2 (en) | 1987-09-14 | 1987-09-14 | Infrared detector |
EP88308435A EP0308169B1 (en) | 1987-09-14 | 1988-09-13 | Charge injection circuit |
US07/670,384 US5093589A (en) | 1987-09-14 | 1991-03-15 | Charge injection circuit having impedance conversion means |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62230254A JPH07120816B2 (en) | 1987-09-14 | 1987-09-14 | Infrared detector |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6473867A true JPS6473867A (en) | 1989-03-20 |
JPH07120816B2 JPH07120816B2 (en) | 1995-12-20 |
Family
ID=16904925
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62230254A Expired - Lifetime JPH07120816B2 (en) | 1987-09-14 | 1987-09-14 | Infrared detector |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH07120816B2 (en) |
-
1987
- 1987-09-14 JP JP62230254A patent/JPH07120816B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH07120816B2 (en) | 1995-12-20 |
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