JPS6473867A - Infrared detector - Google Patents

Infrared detector

Info

Publication number
JPS6473867A
JPS6473867A JP62230254A JP23025487A JPS6473867A JP S6473867 A JPS6473867 A JP S6473867A JP 62230254 A JP62230254 A JP 62230254A JP 23025487 A JP23025487 A JP 23025487A JP S6473867 A JPS6473867 A JP S6473867A
Authority
JP
Japan
Prior art keywords
devices
amplifiers
amplifier
constitution
mos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62230254A
Other languages
Japanese (ja)
Other versions
JPH07120816B2 (en
Inventor
Nobuyuki Kajiwara
Yoshihiro Miyamoto
Kunihiro Tanigawa
Yuichiro Ito
Kazuya Kubo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP62230254A priority Critical patent/JPH07120816B2/en
Priority to EP88308435A priority patent/EP0308169B1/en
Publication of JPS6473867A publication Critical patent/JPS6473867A/en
Priority to US07/670,384 priority patent/US5093589A/en
Publication of JPH07120816B2 publication Critical patent/JPH07120816B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Radiation Pyrometers (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To improve injection efficiency and to suppress a dark current from being increased, by constituting a device in such a way that the potential of a MOS type signal processing circuit is positively fed back to the substrate potential of a photovoltaic type(PV) infrared detecting device by using an amplifier. CONSTITUTION:Plural pairs of coarse consisting of a MOS transistor 2, the amplifier 3, and the PV device 4 are constituted in array shape. The MOS transistors 21-23, the amplifiers 31-33, and a CCD 10 are provided on a substrate 11 made of, for example, an Si(silicon), and the PV devices 41-43 are provided on an insulating plate 5. In such a case, the PV devices 41-43 are separated electrically and formed by a working technique such as ion milling, etc. The connection of the PV devices 41-43 to the amplifiers 31-33 and the MOS transistors 21-23 is performing by wire bonding, etc. By employing such constitution, it is possible to reduce the dark current even when a contact part 8 is provided in an area from a pn<+> joint interface 6a to the diffusion length of a few number of carriers.
JP62230254A 1987-09-14 1987-09-14 Infrared detector Expired - Lifetime JPH07120816B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP62230254A JPH07120816B2 (en) 1987-09-14 1987-09-14 Infrared detector
EP88308435A EP0308169B1 (en) 1987-09-14 1988-09-13 Charge injection circuit
US07/670,384 US5093589A (en) 1987-09-14 1991-03-15 Charge injection circuit having impedance conversion means

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62230254A JPH07120816B2 (en) 1987-09-14 1987-09-14 Infrared detector

Publications (2)

Publication Number Publication Date
JPS6473867A true JPS6473867A (en) 1989-03-20
JPH07120816B2 JPH07120816B2 (en) 1995-12-20

Family

ID=16904925

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62230254A Expired - Lifetime JPH07120816B2 (en) 1987-09-14 1987-09-14 Infrared detector

Country Status (1)

Country Link
JP (1) JPH07120816B2 (en)

Also Published As

Publication number Publication date
JPH07120816B2 (en) 1995-12-20

Similar Documents

Publication Publication Date Title
TW200707715A (en) Solid-state image pickup device
KR890004476B1 (en) Semiconductor optical detection device
JP4295740B2 (en) Charge coupled device image sensor
JPS59107578A (en) Semiconductor photoelectric conversion device
US20230317746A1 (en) Imaging device
CA1266913A (en) Picture pick-up device including a solid-state image sensor and an electronic shutter
JPH10335622A (en) Photoelectric conversion device
TW343385B (en) Power transistor
US4536658A (en) Hybrid Schottky infrared focal plane array
JPH09331051A (en) Photoelectric conversion semiconductor device
EP0377959A3 (en) A method of driving a charge detection circuit
JPS6473867A (en) Infrared detector
GB0411926D0 (en) Direct electron detector
US3480780A (en) Radiation sensitive switching system for an array of elements
JPS6423567A (en) Semiconductor photodetector device
JPS649655A (en) Photodetector built-in type semiconductor integrated circuit
US20040089790A1 (en) Spatially modulated photodetectors
JP2000091550A (en) Solid image pickup device and manufacture thereof
CN101110440B (en) Solid-state imaging device
JP2680455B2 (en) Semiconductor device
EP0126184A3 (en) Input protection circuit and bias method for scaled cmos devices
US7045761B2 (en) Self-pixelating focal plane array with electronic output
Kohn A charge-coupled infrared imaging array with Schottky-barrier detectors
US5665998A (en) Geometric enhancement of photodiodes for low dark current operation
JPS5527772A (en) Solid state pickup device