JPS6468954A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6468954A JPS6468954A JP22740587A JP22740587A JPS6468954A JP S6468954 A JPS6468954 A JP S6468954A JP 22740587 A JP22740587 A JP 22740587A JP 22740587 A JP22740587 A JP 22740587A JP S6468954 A JPS6468954 A JP S6468954A
- Authority
- JP
- Japan
- Prior art keywords
- resin film
- semiconductor device
- resin
- sealing
- leakage current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Landscapes
- Injection Moulding Of Plastics Or The Like (AREA)
- Adhesive Tapes (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
PURPOSE:To produce a semiconductor device in which no leakage current is present between leads thereof, by employing a series of processes in which a semiconductor device is assembled using a resin film and the resin film is then removed, a resin sealing being thereafter performed. CONSTITUTION:A semiconductor device loading part 1 and inner leads 2 of a lead frame are relatively fixed on a resin film 3 of which bonding strength is weakened by irradiation of ultraviolet rays. Under this fixed condition, a die bonding of a semiconductor device 4 is performed, and a wire bonding is then performed using metal fine wires 5. Under this condition, the resin film 3 is irradiated with ultraviolet rays to weaken the bonding strength thereof. Subsequently, the resin film 3 is peeled off, sealing is thereafter performed with a resin 6. As a result, during a resin sealing process, the resin film, which causes leakage current to be increased, needn't be employed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22740587A JPS6468954A (en) | 1987-09-09 | 1987-09-09 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22740587A JPS6468954A (en) | 1987-09-09 | 1987-09-09 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6468954A true JPS6468954A (en) | 1989-03-15 |
Family
ID=16860316
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP22740587A Pending JPS6468954A (en) | 1987-09-09 | 1987-09-09 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6468954A (en) |
-
1987
- 1987-09-09 JP JP22740587A patent/JPS6468954A/en active Pending
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