JPS6468072A - Method for driving cathode-ray tube - Google Patents

Method for driving cathode-ray tube

Info

Publication number
JPS6468072A
JPS6468072A JP22434687A JP22434687A JPS6468072A JP S6468072 A JPS6468072 A JP S6468072A JP 22434687 A JP22434687 A JP 22434687A JP 22434687 A JP22434687 A JP 22434687A JP S6468072 A JPS6468072 A JP S6468072A
Authority
JP
Japan
Prior art keywords
circuit
gamma
logarithmic
luminance signal
subjected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22434687A
Other languages
Japanese (ja)
Inventor
Kiyoshi Hamada
Kaoru Tomii
Junpei Hashiguchi
Kinzo Nonomura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP22434687A priority Critical patent/JPS6468072A/en
Publication of JPS6468072A publication Critical patent/JPS6468072A/en
Pending legal-status Critical Current

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  • Picture Signal Circuits (AREA)

Abstract

PURPOSE:To obtain an excellent image without any irregularity, by obtaining a signal generated in a manner that a luminance signal voltage is subjected to a logarithmic transformation, then multiplied by a correction coefficient, thereafter subjected to an inverse logarithmic transformation, and modulating an electron beam with thus obtained signals. CONSTITUTION:In a memory 52, gamma-correction data D52 corresponding to the respective gamma-values of electron sources 50a, 50b... are written. A luminance signal voltage ED is converted to a logarithmic value by a logarithmic circuit 53, an output from the circuit 53 is multiplied by gamma-correction data D52a, D52b, sequentially read out from the memory 52 in a multiplying circuit 54, then in an inverse logarithmic circuit 55, an output from the circuit 54 is subjected to an inverse logarithmic transformation. An electron beam is modulated with such a luminance signal as the above. In such a way, the gamma characteristics of the respective electron sources constituting a cathode-ray tube can be corrected. As a result, the irregulating of the image caused by the variation in the gamma characteristics can be eliminated.
JP22434687A 1987-09-08 1987-09-08 Method for driving cathode-ray tube Pending JPS6468072A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22434687A JPS6468072A (en) 1987-09-08 1987-09-08 Method for driving cathode-ray tube

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22434687A JPS6468072A (en) 1987-09-08 1987-09-08 Method for driving cathode-ray tube

Publications (1)

Publication Number Publication Date
JPS6468072A true JPS6468072A (en) 1989-03-14

Family

ID=16812324

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22434687A Pending JPS6468072A (en) 1987-09-08 1987-09-08 Method for driving cathode-ray tube

Country Status (1)

Country Link
JP (1) JPS6468072A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02262359A (en) * 1989-04-03 1990-10-25 Takehide Shirato Semiconductor device
US5557146A (en) * 1993-07-14 1996-09-17 University Of South Florida Ohmic contact using binder paste with semiconductor material dispersed therein

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02262359A (en) * 1989-04-03 1990-10-25 Takehide Shirato Semiconductor device
US5557146A (en) * 1993-07-14 1996-09-17 University Of South Florida Ohmic contact using binder paste with semiconductor material dispersed therein

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