JPS6467897A - High-frequency amplifier for semiconductor manufacturing device - Google Patents

High-frequency amplifier for semiconductor manufacturing device

Info

Publication number
JPS6467897A
JPS6467897A JP62223252A JP22325287A JPS6467897A JP S6467897 A JPS6467897 A JP S6467897A JP 62223252 A JP62223252 A JP 62223252A JP 22325287 A JP22325287 A JP 22325287A JP S6467897 A JPS6467897 A JP S6467897A
Authority
JP
Japan
Prior art keywords
permeability
transformers
ferrite cores
amplified
fed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62223252A
Other languages
Japanese (ja)
Inventor
Hiroshi Yano
Shozo Noda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP62223252A priority Critical patent/JPS6467897A/en
Publication of JPS6467897A publication Critical patent/JPS6467897A/en
Pending legal-status Critical Current

Links

Landscapes

  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To amplify high-frequency signals over a wide band by combining ferrite cores with permeability capable of efficiently transmitting separately for different frequency bands with low loss to constitute a transmission line transformer. CONSTITUTION:A high-frequency signal incoming to an input terminal 21 is divided into four through a transformer T1 and fed to gates of electric field effect transistors Q1-Q4 and amplified and fed to transformers T2, T3 and taken out at an output terminal 22 via transformers T4, T5 in sequence. The transformers T2-T5 are combined with the first ferrite cores 241-244 with the first permeability and the second ferrite cores 251-254 with the second permeability in turn, and wide-band signals can be transmitted. High-frequency signals in a wide band can be thereby power-amplified and outputted to the output terminal 22.
JP62223252A 1987-09-07 1987-09-07 High-frequency amplifier for semiconductor manufacturing device Pending JPS6467897A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62223252A JPS6467897A (en) 1987-09-07 1987-09-07 High-frequency amplifier for semiconductor manufacturing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62223252A JPS6467897A (en) 1987-09-07 1987-09-07 High-frequency amplifier for semiconductor manufacturing device

Publications (1)

Publication Number Publication Date
JPS6467897A true JPS6467897A (en) 1989-03-14

Family

ID=16795183

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62223252A Pending JPS6467897A (en) 1987-09-07 1987-09-07 High-frequency amplifier for semiconductor manufacturing device

Country Status (1)

Country Link
JP (1) JPS6467897A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000058465A (en) * 1998-05-29 2000-02-25 Mitsubishi Heavy Ind Ltd Plasma chemical vapor deposition equipment
US8031896B2 (en) 2003-07-21 2011-10-04 Bose Corporation Passive acoustic radiating

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS599173A (en) * 1982-07-06 1984-01-18 ザ・パ−キン−エルマ−・コ−ポレイシヨン Method and apparatus for controllable etching of material
JPS59153303A (en) * 1983-02-22 1984-09-01 Tokyo Denshi Kagaku Kabushiki High frequency oscillator
JPS6151808A (en) * 1984-08-20 1986-03-14 Fujitsu Ltd Structure of ringed compound magnetic core
JPS6263183A (en) * 1985-09-13 1987-03-19 Toshiba Corp Rf type ion source

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS599173A (en) * 1982-07-06 1984-01-18 ザ・パ−キン−エルマ−・コ−ポレイシヨン Method and apparatus for controllable etching of material
JPS59153303A (en) * 1983-02-22 1984-09-01 Tokyo Denshi Kagaku Kabushiki High frequency oscillator
JPS6151808A (en) * 1984-08-20 1986-03-14 Fujitsu Ltd Structure of ringed compound magnetic core
JPS6263183A (en) * 1985-09-13 1987-03-19 Toshiba Corp Rf type ion source

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000058465A (en) * 1998-05-29 2000-02-25 Mitsubishi Heavy Ind Ltd Plasma chemical vapor deposition equipment
US8031896B2 (en) 2003-07-21 2011-10-04 Bose Corporation Passive acoustic radiating
US8594358B2 (en) 2003-07-21 2013-11-26 Bose Corporation Passive acoustical radiating

Similar Documents

Publication Publication Date Title
MY119872A (en) Dual-band, dual-mode power amplifier with reduced power loss
GB1376462A (en) Amplifiers
KR870001706A (en) Frequency converter
ES8502593A1 (en) Input circuit arrangement for a television receiver.
JPS6467897A (en) High-frequency amplifier for semiconductor manufacturing device
JPS5451446A (en) Directional coupler
GB549266A (en) Improvements in or relating to broad band high frequency amplifiers
JPS6451704A (en) Feedback amplifier circuit
KR830000893Y1 (en) Broadcast repeater
GB991506A (en) Improved oscillator-amplifier circuit for magnetic recording
GB1099344A (en) Personal listening apparatus
JPS56140709A (en) High frequency amplifier
JPS5711545A (en) Line coupler for power carrier communication device
JPS6478010A (en) Microwave power amplifier
JPS55136710A (en) Multi-stage electric power amplifier of high frequency transistor
GB934646A (en) Circuit arrangement for the connexion of a load to a coaxial lead
GB1033962A (en) High frequency pulse transformer/distributor
JPS55124314A (en) Parametric amplifier
JPS5466753A (en) Amplifying circuit
GB986528A (en) Traveling wave parametric circuits
JPS53138261A (en) Integrated circuit device
JPS58107642U (en) Earth station high power transmitter
JPS5658305A (en) Amplifier at ultra-high frequency band
JPS55127712A (en) Microwave low noise fet amplifier
JPS6462905A (en) Field effect transistor amplifier