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Toshiba Corp
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Toshiba Corp
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Application filed by Toshiba CorpfiledCriticalToshiba Corp
Priority to JP16091287ApriorityCriticalpatent/JPS646748A/en
Publication of JPS646748ApublicationCriticalpatent/JPS646748A/en
Investigating, Analyzing Materials By Fluorescence Or Luminescence
(AREA)
Abstract
PURPOSE:To achieve a quantitative analysis of a trace of S in a short time, by a method wherein a sample to be analyzed is taken onto a high-melting point metal boat and an oxidizing or reducing agent is added thereto to separate S as hydrogen sulfide by heating and S is introduced into an argon plasma to determine it from intensity of excitation emission. CONSTITUTION:A sample to be analyzed is taken onto a boat made of a high melting point metal such as W and Mo, an oxidizing agent such as orthophosphoric acid and potassium bichromate is added thereto and the sample is melted by heating upto 200-400 deg.C. Then, a reducing agent such as metal Sn is added to the sample to separate S in the sample as hydrogen sulfide by heating upto 200-400 deg.C. The hydrogen sulfide is introduced into an ICP emission analyzer with an inert gas such as Ar as carrier and emission in observed at any wavelength of 180.7, 182.0 or 182.6nm with a spectroscope purged with the inert gas such as Ar to analyze S in material. This eliminates spraying of an aqueous solution required as in the conventional method, thereby enabling expectation of a rise in sensitivity with a high plasma temperature.
JP16091287A1987-06-301987-06-30Analysis of sulfur in semiconductor material
PendingJPS646748A
(en)
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