JPS6465089A - Method and apparatus for producing semiconductor - Google Patents
Method and apparatus for producing semiconductorInfo
- Publication number
- JPS6465089A JPS6465089A JP22093387A JP22093387A JPS6465089A JP S6465089 A JPS6465089 A JP S6465089A JP 22093387 A JP22093387 A JP 22093387A JP 22093387 A JP22093387 A JP 22093387A JP S6465089 A JPS6465089 A JP S6465089A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- ion beam
- growth
- substrate surface
- direction perpendicular
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
PURPOSE:To obtain a high-quality epitaxial growth, layer of a semiconductor at a relatively low temp. by specifying the component of the acceleration energy of an ion beam in the direction perpendicular to the surface of a substrate at the time of projecting the ion beam. CONSTITUTION:A growth region having a susceptor 31 for fixing the substrate and a heater 32 for heating the substrate is enclosed by a liquid nitrogen shroud 28 and the substrate is carried from an adjacent vacuum chamber 30 through a gate valve 29. Molecular rays for growth are supplied by cells 25-27. An ion source 21 is capable of changing the angle between the ion beam and the substrate surface within a 0-10 deg. range by mounting the source via bellows 22 to a port to be mounted with an electron gun for measuring RHEED. The ion beam of the acceleration epitaxial E(eV) is projected in parallel with or at theta incident angle to the substrate surface toward the substrate during the epitaxial growth so that the component Esintheta of the acceleration energy of the ion beam in the direction perpendicular to the substrate surface is confined to <=10eV.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22093387A JPS6465089A (en) | 1987-09-03 | 1987-09-03 | Method and apparatus for producing semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22093387A JPS6465089A (en) | 1987-09-03 | 1987-09-03 | Method and apparatus for producing semiconductor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6465089A true JPS6465089A (en) | 1989-03-10 |
Family
ID=16758830
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP22093387A Pending JPS6465089A (en) | 1987-09-03 | 1987-09-03 | Method and apparatus for producing semiconductor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6465089A (en) |
-
1987
- 1987-09-03 JP JP22093387A patent/JPS6465089A/en active Pending
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