JPS6465089A - Method and apparatus for producing semiconductor - Google Patents

Method and apparatus for producing semiconductor

Info

Publication number
JPS6465089A
JPS6465089A JP22093387A JP22093387A JPS6465089A JP S6465089 A JPS6465089 A JP S6465089A JP 22093387 A JP22093387 A JP 22093387A JP 22093387 A JP22093387 A JP 22093387A JP S6465089 A JPS6465089 A JP S6465089A
Authority
JP
Japan
Prior art keywords
substrate
ion beam
growth
substrate surface
direction perpendicular
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22093387A
Other languages
Japanese (ja)
Inventor
Toshiro Hayakawa
Naohiro Suyama
Kousei Takahashi
Masafumi Kondo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP22093387A priority Critical patent/JPS6465089A/en
Publication of JPS6465089A publication Critical patent/JPS6465089A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

PURPOSE:To obtain a high-quality epitaxial growth, layer of a semiconductor at a relatively low temp. by specifying the component of the acceleration energy of an ion beam in the direction perpendicular to the surface of a substrate at the time of projecting the ion beam. CONSTITUTION:A growth region having a susceptor 31 for fixing the substrate and a heater 32 for heating the substrate is enclosed by a liquid nitrogen shroud 28 and the substrate is carried from an adjacent vacuum chamber 30 through a gate valve 29. Molecular rays for growth are supplied by cells 25-27. An ion source 21 is capable of changing the angle between the ion beam and the substrate surface within a 0-10 deg. range by mounting the source via bellows 22 to a port to be mounted with an electron gun for measuring RHEED. The ion beam of the acceleration epitaxial E(eV) is projected in parallel with or at theta incident angle to the substrate surface toward the substrate during the epitaxial growth so that the component Esintheta of the acceleration energy of the ion beam in the direction perpendicular to the substrate surface is confined to <=10eV.
JP22093387A 1987-09-03 1987-09-03 Method and apparatus for producing semiconductor Pending JPS6465089A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22093387A JPS6465089A (en) 1987-09-03 1987-09-03 Method and apparatus for producing semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22093387A JPS6465089A (en) 1987-09-03 1987-09-03 Method and apparatus for producing semiconductor

Publications (1)

Publication Number Publication Date
JPS6465089A true JPS6465089A (en) 1989-03-10

Family

ID=16758830

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22093387A Pending JPS6465089A (en) 1987-09-03 1987-09-03 Method and apparatus for producing semiconductor

Country Status (1)

Country Link
JP (1) JPS6465089A (en)

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