JPS646396A - Manufacturing method for thin film el element - Google Patents

Manufacturing method for thin film el element

Info

Publication number
JPS646396A
JPS646396A JP62159988A JP15998887A JPS646396A JP S646396 A JPS646396 A JP S646396A JP 62159988 A JP62159988 A JP 62159988A JP 15998887 A JP15998887 A JP 15998887A JP S646396 A JPS646396 A JP S646396A
Authority
JP
Japan
Prior art keywords
film layer
oxide
oxide dielectric
nitrogen gas
phosphor film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62159988A
Other languages
Japanese (ja)
Inventor
Yosuke Fujita
Jun Kuwata
Masahiro Nishikawa
Takao Toda
Tomizo Matsuoka
Atsushi Abe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP62159988A priority Critical patent/JPS646396A/en
Publication of JPS646396A publication Critical patent/JPS646396A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To make it possible to form a film layer strong in adhesion by setting the target at the sintered body of an oxide dielectric and laminating an oxide dielectric film layer on a phosphor film layer by the sputtering inside the atmosphere which includes nitrogen gas. CONSTITUTION:Setting the target 6 at the sintered body of an oxide, an oxide dielectric film 7 is formed on a phosphor film layer 4 by the sputtering inside the atmosphere which includes nitrogen gas. That is, since the oxide phosphor film layer 4 tends to be affected especially by oxygen plasma, favorable effect can be obtained, and as the sputtering gas, the nitrogen gas can achieve the purpose by itself, but it is desirable to use noble gas such as argon, etc., since it is excellent in filming speed. Hereby it becomes possible to form an oxide dielectric film high in adhesion without causing damage to the surface of the phosphor film layer.
JP62159988A 1987-06-26 1987-06-26 Manufacturing method for thin film el element Pending JPS646396A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62159988A JPS646396A (en) 1987-06-26 1987-06-26 Manufacturing method for thin film el element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62159988A JPS646396A (en) 1987-06-26 1987-06-26 Manufacturing method for thin film el element

Publications (1)

Publication Number Publication Date
JPS646396A true JPS646396A (en) 1989-01-10

Family

ID=15705544

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62159988A Pending JPS646396A (en) 1987-06-26 1987-06-26 Manufacturing method for thin film el element

Country Status (1)

Country Link
JP (1) JPS646396A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4960579A (en) * 1988-04-01 1990-10-02 Union Carbide Corporation Membrane process and system for nitrogen production

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4960579A (en) * 1988-04-01 1990-10-02 Union Carbide Corporation Membrane process and system for nitrogen production

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