JPS6461914A - Photoelectronic image transfer device - Google Patents

Photoelectronic image transfer device

Info

Publication number
JPS6461914A
JPS6461914A JP62219372A JP21937287A JPS6461914A JP S6461914 A JPS6461914 A JP S6461914A JP 62219372 A JP62219372 A JP 62219372A JP 21937287 A JP21937287 A JP 21937287A JP S6461914 A JPS6461914 A JP S6461914A
Authority
JP
Japan
Prior art keywords
mask
camera
picture signal
intensity distribution
photoelectrons
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62219372A
Other languages
Japanese (ja)
Inventor
Akio Yamada
Hiroshi Yasuda
Juichi Sakamoto
Jinko Kudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP62219372A priority Critical patent/JPS6461914A/en
Priority to US07/238,047 priority patent/US5029222A/en
Priority to EP19880308029 priority patent/EP0306275A3/en
Priority to KR8811318A priority patent/KR910009322B1/en
Publication of JPS6461914A publication Critical patent/JPS6461914A/en
Pending legal-status Critical Current

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  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To avoid wasteful transfer, and to inhibit the generation of loss by receiving the irradiation of photoelectrons E from a mask so as to contain the whole region of a specified transfer region in a mask and detecting the distribution of photoelectron intensity in the transfer region by a two-dimensional electron-ray detecting means. CONSTITUTION:A two-dimensional electron ray detecting means 10 is composed of a fluorescent screen 11, a TV camera 12 and a lens system 13 optically coupling both the screen 11 and the camera 12. The fluorescent screen 11 is arranged at the position of a wafer 2 at the time of transfer, is irradiated with photoelectrons E from a mask 4 so as to include the whole region of a specified transfer region in the mask 4, and emits fluorescence in intensity distribution corresponding to the intensity distribution of photoelectrons E, and the TV camera 12 converts the intensity distribution into a picture signal. The picture signal of a reference corresponding to the intensity distribution of the reference, which will be changed, is acquired previously only by the shape and arrangement of the pattern of the mask 4, and the picture signal from the TV camera 12 and the picture signal of the reference are compared. Accordingly, the nonuniformity of the distribution of a photoconductive film 4c can be detected by the difference of both picture signals.
JP62219372A 1987-09-02 1987-09-02 Photoelectronic image transfer device Pending JPS6461914A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP62219372A JPS6461914A (en) 1987-09-02 1987-09-02 Photoelectronic image transfer device
US07/238,047 US5029222A (en) 1987-09-02 1988-08-30 Photoelectron image projection apparatus
EP19880308029 EP0306275A3 (en) 1987-09-02 1988-08-31 Photoelectron image projection apparatus
KR8811318A KR910009322B1 (en) 1987-09-02 1988-09-02 Photoelectron image projection apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62219372A JPS6461914A (en) 1987-09-02 1987-09-02 Photoelectronic image transfer device

Publications (1)

Publication Number Publication Date
JPS6461914A true JPS6461914A (en) 1989-03-08

Family

ID=16734384

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62219372A Pending JPS6461914A (en) 1987-09-02 1987-09-02 Photoelectronic image transfer device

Country Status (1)

Country Link
JP (1) JPS6461914A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5068544A (en) * 1989-07-18 1991-11-26 Sanyo Electric Co., Ltd. Fsk data waveform shaping circuit
US5783367A (en) * 1989-09-20 1998-07-21 Fujitsu Limited Process for production of semiconductor device and resist developing apparatus used therein
KR19990080932A (en) * 1998-04-23 1999-11-15 신영주 Oil separator
US7829863B2 (en) 2005-05-17 2010-11-09 Kyoto University Electron beam irradiation device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5068544A (en) * 1989-07-18 1991-11-26 Sanyo Electric Co., Ltd. Fsk data waveform shaping circuit
US5783367A (en) * 1989-09-20 1998-07-21 Fujitsu Limited Process for production of semiconductor device and resist developing apparatus used therein
KR19990080932A (en) * 1998-04-23 1999-11-15 신영주 Oil separator
US7829863B2 (en) 2005-05-17 2010-11-09 Kyoto University Electron beam irradiation device
JP4945763B2 (en) * 2005-05-17 2012-06-06 国立大学法人京都大学 Electron beam exposure system

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