JPS646052U - - Google Patents
Info
- Publication number
- JPS646052U JPS646052U JP9938487U JP9938487U JPS646052U JP S646052 U JPS646052 U JP S646052U JP 9938487 U JP9938487 U JP 9938487U JP 9938487 U JP9938487 U JP 9938487U JP S646052 U JPS646052 U JP S646052U
- Authority
- JP
- Japan
- Prior art keywords
- sidewall
- gate electrode
- mos transistor
- impurity concentration
- concentration region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000012535 impurity Substances 0.000 claims 2
- 238000005530 etching Methods 0.000 claims 1
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9938487U JPS646052U (bg) | 1987-06-30 | 1987-06-30 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9938487U JPS646052U (bg) | 1987-06-30 | 1987-06-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS646052U true JPS646052U (bg) | 1989-01-13 |
Family
ID=31326494
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9938487U Pending JPS646052U (bg) | 1987-06-30 | 1987-06-30 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS646052U (bg) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54142981A (en) * | 1978-04-27 | 1979-11-07 | Matsushita Electric Ind Co Ltd | Manufacture of insulation gate type semiconductor device |
-
1987
- 1987-06-30 JP JP9938487U patent/JPS646052U/ja active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54142981A (en) * | 1978-04-27 | 1979-11-07 | Matsushita Electric Ind Co Ltd | Manufacture of insulation gate type semiconductor device |