JPS6455815A - Sputtering apparatus for manufacturing thin magnetic film - Google Patents

Sputtering apparatus for manufacturing thin magnetic film

Info

Publication number
JPS6455815A
JPS6455815A JP21365587A JP21365587A JPS6455815A JP S6455815 A JPS6455815 A JP S6455815A JP 21365587 A JP21365587 A JP 21365587A JP 21365587 A JP21365587 A JP 21365587A JP S6455815 A JPS6455815 A JP S6455815A
Authority
JP
Japan
Prior art keywords
target
substrate
magnetic film
gas
permanent magnet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21365587A
Other languages
Japanese (ja)
Inventor
Takahiro Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP21365587A priority Critical patent/JPS6455815A/en
Publication of JPS6455815A publication Critical patent/JPS6455815A/en
Pending legal-status Critical Current

Links

Landscapes

  • Physical Vapour Deposition (AREA)
  • Thin Magnetic Films (AREA)

Abstract

PURPOSE:To efficiently form a magnetic film having uniform magnetic properties by so disposing a first permanent magnet that the same poles face at the position for surrounding between a target and a substrate, and so disposing a second permanent magnet that a reverse pole to the pole faces the target around the center of the target on the rear face of the target. CONSTITUTION:After a substrate 10 is heated, discharging Ar gas is introduced from a gate introduction system into a vacuum vessel, and the vessel is held in vacuum of approx. 10<-5>Torr. Then, a negative high potential is applied to a target 7 of a ferromagnetic metal material to ionize the Ar gas to Ar<+>. In this case, lines 21 of magnetic force from first permanent magnets 19a, 19b, 19c, 19d substantially uniformly pass through the whole target 7 to a second permanent magnet 20. Thus, since second electrons for ionizing the Ar gas are substantially uniformly enclosed in the whole area on the target 7, the Ar<+> collides uniformly with the target 7 in high density to discharge atoms 22. The discharged atoms 22 collide substantially perpendicularly with the substrate 10 to form a magnetic film 23 having a columnar structure 26 perpendicular to the surface of the substrate 10..
JP21365587A 1987-08-27 1987-08-27 Sputtering apparatus for manufacturing thin magnetic film Pending JPS6455815A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21365587A JPS6455815A (en) 1987-08-27 1987-08-27 Sputtering apparatus for manufacturing thin magnetic film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21365587A JPS6455815A (en) 1987-08-27 1987-08-27 Sputtering apparatus for manufacturing thin magnetic film

Publications (1)

Publication Number Publication Date
JPS6455815A true JPS6455815A (en) 1989-03-02

Family

ID=16642760

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21365587A Pending JPS6455815A (en) 1987-08-27 1987-08-27 Sputtering apparatus for manufacturing thin magnetic film

Country Status (1)

Country Link
JP (1) JPS6455815A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07166349A (en) * 1993-12-13 1995-06-27 Anelva Corp Flat pate magnetron sputtering device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07166349A (en) * 1993-12-13 1995-06-27 Anelva Corp Flat pate magnetron sputtering device

Similar Documents

Publication Publication Date Title
US4179351A (en) Cylindrical magnetron sputtering source
CA2326202C (en) Method and apparatus for deposition of biaxially textured coatings
KR930021814A (en) Continuous thin film formation method
JP3655334B2 (en) Magnetron sputtering equipment
US4716340A (en) Pre-ionization aided sputter gun
GB2051877A (en) Magnetically Enhanced Sputtering Device and Method
JPS6455815A (en) Sputtering apparatus for manufacturing thin magnetic film
JPS6151410B2 (en)
US5609739A (en) Sputtering apparatus
JPH01298154A (en) Opposed target-type planar magnetron sputtering device
Tominaga Preparation of AIN films by planar magnetron sputtering system with facing two targets
JPH0578831A (en) Formation of thin film and device therefor
JPS6217175A (en) Sputtering device
JP2001348663A (en) Sputtering system
JPS63125675A (en) Magnetron sputtering device
JPS58199862A (en) Magnetron type sputtering device
JPH03240953A (en) Magnetron sputtering device
JPH0633454B2 (en) Sputtering device
JPS55141721A (en) Sputtering apparatus for magnetic body
JPH046792B2 (en)
JPH0641736A (en) Sputtering electrode
JPS6130666A (en) High-speed sputtering device
JPS57137469A (en) Sputtering device
JPH0941137A (en) Magnetron sputtering device
JPS63266065A (en) Film forming device