JPS6130666A - High-speed sputtering device - Google Patents

Abstract

PURPOSE:To increase the number of sputtering and to increase a sputtering speed in film formation, etching, etc. by generating a perpendicular magnetic field near the surface of a target in a sputtering device. CONSTITUTION:A substrate base 16 provided with a cooling pipe 17 is attached in a vacuum vessel 11 and the substrates 15 to be subjected to the sputtering treatment are set on both surfaces thereof. A target 12 is disposed to face the substrates 15 and the magnetic field domain, constituted with a permanent magnet 13 consisting of a rare earth magnet such as SmCO<5> and a yoke 14 and having >=9,000 gauss residual magnetic flux density is disposed on the rear thereof to form the powerful magnetic field. A high-frequency voltage is impressed at the same instant between the target 12 and the base 16 from a high-frequency power source 18 and the generated plasma is increased in density by the above- mentioned magnetic field. The surface of the target 12 is sputtered by the powerful ions generated there. The film formation at a high film deposition rate and the uniform etching at a high speed are made possible.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a high-speed sputtering apparatus for film deposition and etching in semiconductor process technology.

Structure of a conventional example and its problems As shown in FIG. 1, a conventional high-speed sputtering apparatus has a specific structure, in which a permanent magnet 4 is used to apply a magnetic field 3 parallel to the surface of the target 2 near the surface of the target 2 provided in a vacuum chamber 1. was obtained by An electric field 7 perpendicular to the magnetic field 3 was obtained between the target 2 and the substrate 5 by a power source 6. This orthogonal magnetic field 3
By the electric field 7 and the space charge, electrons in the discharge region were captured and caused to be magnetron discharged from the introduced gas 8.

The sputtering speed was increased by increasing the plasma density near the target 2 using the permanent magnet 4.

However, in the above configuration, the magnetic field 3 was weak and non-uniform because the magnet configuration utilized an unnatural magnetic gap that uses a leakage magnetic field. For this reason, the film deposition rate was not satisfactory, and target 2 was only partially worn out, making it inefficient. OBJECTS OF THE INVENTION In view of the above-mentioned drawbacks, the present invention has been developed to provide a high-speed etching process that is capable of fast film deposition and efficient target use, as well as high-speed and uniform etching. The present invention provides an ivy device.

Structure of the Invention The apparatus of the present invention includes a vacuum chamber for maintaining a vacuum atmosphere, a means for introducing sputtering gas, a plurality of sets of permanent magnets having opposing magnetic field configurations, and a device disposed on the permanent magnets. Two targets facing each other, a substrate stand disposed between the targets, a means for holding a substrate to be deposited, which is a target for film formation using a target electrode, on the front and back sides of the substrate stand; It consists of high-frequency power for maintaining a discharge between the substrate pedestals, and has the unique effect of being able to deposit and etch films at high speed and with good uniformity.

□ Description of Embodiment An embodiment of the present invention will be described below with reference to the drawings.

[Embodiment 1] FIG. 2 shows the configuration of a high-speed sputtering apparatus in a first embodiment of the present invention. In FIG. 2, 11 is a vacuum chamber, 12 is a target provided in the vacuum chamber 11, and 13 is a vacuum chamber.
14 is a yoke for transmitting the magnetic field of the permanent magnet 13; 16 is a substrate; 16 is a substrate stand for holding the substrate 15; 7 and 17 are cooling pipes provided within the substrate table 16 to cool the substrate 15.

The operation of the high-speed sputtering apparatus configured as described above will be described below.

First, by bringing the magnetic field configuration shown in FIG. 3 below the target 12, the magnetic field 20
For example, by using SmCo6, a rare earth magnet, as the permanent magnet 13, the residual magnetic flux density is 9000 Gauss or more, and the demagnetization is extremely small, so a very strong magnetic field 20 can be obtained. The yoke 14 has a high saturation magnetic flux density. FIG. 4 shows the relationship between Gap value and magnetic field strength. 2 targets 1
2. Introduce high-frequency power from a high-frequency power source 18 to 2. ◇ Place the substrate stand 16 made of non-magnetic material in the middle and ground it.

The plasma generated by the high frequency discharge is strengthened by the action of the magnetic field 20, and the plasma density increases. The ions generated here sputter the surface of the target 12. As the amount of ions increases, the number of sputtering increases, and the number of sputtering increases.
6 bases are deposited on the attached substrate 16 on both sides. That is, magnetic field 2
o increases the plasma density and increases the film deposition rate.

[Embodiment 2] A second embodiment of the present invention will be described below with reference to the drawings.

FIG. 5 is a perspective view of a high-speed snow vine device showing a second embodiment of the present invention. In the figure, 21 is the target;
22 is a permanent magnet that generates a magnetic field perpendicular to the surface of the target 21, 23 is a yoke for transmitting the magnetic field of the permanent magnet 22, 24 is a substrate, and 25 is a substrate stand for holding the substrate 24. The difference from the configuration shown in Figure 2 is the board stand 2.
6 is made movable.

The operation of the high-speed sputtering apparatus configured as described above will be described below.

By placing the board 24 on both sides of the board stand 26 and moving the board stand 26 back and forth in the X direction at a period equal to the thickness of the yoke 22,
The average value of the plasma intensity becomes constant over the entire surface of the substrate 24, allowing uniform film deposition. Further, the substrate stand 26 can be used as a transport system for the substrate 24.

As described above, by moving the substrate table 25 at regular intervals, uniform film deposition can be achieved.

[Embodiment 3] A third embodiment of the present invention will be described below with reference to the drawings.

FIG. 6 is a perspective view of a high-speed sputtering apparatus showing a third embodiment of the present invention. In the figure, 26 is a substrate, 27 is a substrate stand for holding the substrate 26, 28 is a permanent magnet that generates a perpendicular magnetic field near the surface of the substrate 26, and 29 is a joint for transmitting the magnetic field of the permanent magnet 28. Iron, 30 is the board 26
This is an anti-adhesion plate for adhering sputtered substances. The difference from the configuration shown in FIG. 5 is that a substrate 26 is provided at the position of the target 21.

The operation of the high-speed sputtering apparatus configured as described above will be described below.

A board 26 is placed on the upper and lower surfaces of the inside of a box-shaped board stand 27. Sandwich the substrate stand 27 with the magnetic field configuration shown in FIG.
Obtain a perpendicular magnetic field near the surface of 6.

Plasma generated by high-frequency discharge is strengthened by a magnetic field to increase plasma density. The ions generated here sputter the surface of the substrate 26, thereby etching the substrate 26. At this time, in order to improve the uniformity of etching, the substrate table 27 is moved in the X direction. Further, in order to prevent sputtered matter from adhering to the substrate 26 again, an anti-adhesion plate 3o is arranged at the center of the substrate stand 27.

As described above, by generating a perpendicular magnetic field near the surface of the substrate 26, the plasma density can be increased and the etching rate of the substrate 26 can be increased.

Effects of the Invention As described above, in the present invention, by generating a perpendicular magnetic field near the target surface, the number of sputtering operations can be increased, and film deposition and etching can be performed faster than conventional high-speed sputtering equipment.
It can be done more than twice as fast, and has great practical effects.

[Brief explanation of the drawing]

9A, - Fig. 1 is a block diagram of a conventional high-speed sputtering apparatus, Fig. 2 is a block diagram of a high-speed sputtering apparatus according to the first embodiment of the present invention, and Fig. 3 shows the magnetic field configuration of Fig. 2. A partial side view, FIG. 4 is a graph showing the magnetic field strength of FIG. 3, and FIG. 5 is a perspective view of a high-speed sputtering apparatus in a second embodiment of the present invention.
FIG. 6 is a perspective view of a high-speed sputtering apparatus in a third embodiment of the present invention. 12...Target, 13...Permanent magnet, 14...Yoke, 16...Substrate, 1
6... Board stand. Name of agent: Patent attorney Toshio Nakao and 1 other person 1st
Figure 2 Figure 3 Figure 4

Claims (4)

[Claims] (1) A vacuum chamber for maintaining a vacuum atmosphere, a means for introducing sputtering gas, multiple sets of permanent magnets with opposing magnetic field configurations, and two sets of permanent magnets placed above the permanent magnets and facing each other. A target, a substrate stand disposed between the targets, a means for holding a substrate on which film formation is to be performed using a target electrode on the front and back sides of the substrate stand, and an electric discharge between the target and the substrate stand. High-speed sputtering equipment equipped with high frequency power supply and for maintaining. (2) A high-speed sputtering apparatus according to claim 1, wherein a plurality of pairs of opposing magnetic field configurations are arranged in a row so that adjacent permanent magnets obtain magnetic fields in different directions. (3) A vacuum chamber for maintaining a vacuum atmosphere, a means for introducing sputtering gas, multiple sets of permanent magnets with opposing magnetic field configurations, and two sets of permanent magnets placed above the permanent magnets and facing each other. A high-speed sputtering apparatus comprising a substrate stand, a sputtered substrate placed on the substrate stand, and a high frequency power source for maintaining discharge between the two substrate stands. (4) The high-speed sputtering apparatus according to claim 4, wherein a plurality of sets of opposing magnetic field configurations are arranged in a row so that adjacent permanent magnets obtain magnetic fields in different directions.