JPS6455798A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS6455798A
JPS6455798A JP62210232A JP21023287A JPS6455798A JP S6455798 A JPS6455798 A JP S6455798A JP 62210232 A JP62210232 A JP 62210232A JP 21023287 A JP21023287 A JP 21023287A JP S6455798 A JPS6455798 A JP S6455798A
Authority
JP
Japan
Prior art keywords
inputted
gate
condition
input terminal
potential condition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62210232A
Other languages
Japanese (ja)
Other versions
JP2519468B2 (en
Inventor
Katsuhiko Tsuura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP62210232A priority Critical patent/JP2519468B2/en
Publication of JPS6455798A publication Critical patent/JPS6455798A/en
Application granted granted Critical
Publication of JP2519468B2 publication Critical patent/JP2519468B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Techniques For Improving Reliability Of Storages (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)

Abstract

PURPOSE:To select a preliminary memory bit without fail by deciding the potential condition of a transistor connected to a setting input terminal while other edge of a fuse is connected to a source immediately after an address is fetched and holding this with an FF circuit. CONSTITUTION:To a setting input terminal S of an FF 17, the potential condition of a node N, namely, an H or L level is inputted by the cutting condition of fuses 1-6 of a redundant circuit and the potential condition is stably held. To an input terminal C, a setting clock signal SCK is inputted from a column address fetching signal 1CAS after a constant delaying time. From an output terminal Q and inversion Q, the output to hold the potential condition of the node N is inputted to the gate of transistors (TR) 14 and 15. The TR 14 and 15 are turned on and off in the condition of the H or L level of a clock signal CK and the gate inputted after the delaying time of the constant time from a row address fetching signal, and to the gate of a transistor for a transfer gate between an preliminary or ordinary memory bit line and a data line, a switching signal SCL or CL is sent.
JP62210232A 1987-08-26 1987-08-26 Semiconductor integrated circuit Expired - Lifetime JP2519468B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62210232A JP2519468B2 (en) 1987-08-26 1987-08-26 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62210232A JP2519468B2 (en) 1987-08-26 1987-08-26 Semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS6455798A true JPS6455798A (en) 1989-03-02
JP2519468B2 JP2519468B2 (en) 1996-07-31

Family

ID=16585972

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62210232A Expired - Lifetime JP2519468B2 (en) 1987-08-26 1987-08-26 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JP2519468B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0512898A (en) * 1991-07-08 1993-01-22 Nec Corp Semiconductor integrated circuit device
EP0704800A3 (en) * 1994-09-28 1999-03-10 Nec Corporation Semiconductor memory device including redundant bit line selection signal generating circuit
EP0780764A3 (en) * 1995-12-18 1999-04-14 Samsung Electronics Co., Ltd. A redundancy circuit for memory devices having high frequency addressing cycles

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0512898A (en) * 1991-07-08 1993-01-22 Nec Corp Semiconductor integrated circuit device
EP0704800A3 (en) * 1994-09-28 1999-03-10 Nec Corporation Semiconductor memory device including redundant bit line selection signal generating circuit
EP0780764A3 (en) * 1995-12-18 1999-04-14 Samsung Electronics Co., Ltd. A redundancy circuit for memory devices having high frequency addressing cycles

Also Published As

Publication number Publication date
JP2519468B2 (en) 1996-07-31

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