JPS6454701A - Thin-film resistor - Google Patents

Thin-film resistor

Info

Publication number
JPS6454701A
JPS6454701A JP62211984A JP21198487A JPS6454701A JP S6454701 A JPS6454701 A JP S6454701A JP 62211984 A JP62211984 A JP 62211984A JP 21198487 A JP21198487 A JP 21198487A JP S6454701 A JPS6454701 A JP S6454701A
Authority
JP
Japan
Prior art keywords
film
resistor
thin
compound
cobalt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62211984A
Other languages
Japanese (ja)
Inventor
Chiharu Niki
Kazuyuki Okano
Yasuto Isozaki
Hiroshi Hasegawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP62211984A priority Critical patent/JPS6454701A/en
Publication of JPS6454701A publication Critical patent/JPS6454701A/en
Pending legal-status Critical Current

Links

Landscapes

  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Non-Adjustable Resistors (AREA)

Abstract

PURPOSE:To obtain a resistor having excellent power characteristics at low cost by preparing the thin-film resistor by the sintered body of ruthenium oxide fine particles in 50-2000Angstrom containing cobalt oxide as a solid solution. CONSTITUTION:The mixture of a compound containing ruthenium in structure and a compound including cobalt is applied onto a support base body, and a thin-film resistor having an excellent resistance temperature coefficient is acquired through thermal decomposition at 250 deg.C or more and sintering. The surface of a film formed is equalized because the resistor consists of the sintered body of metallic oxide particles in several dozen-several thousand A, and the strong film is obtained because the inorganic cobalt compound is used. The adhesive film is shaped even at a low sintering temperature because of the inorganic cobalt compound.
JP62211984A 1987-08-26 1987-08-26 Thin-film resistor Pending JPS6454701A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62211984A JPS6454701A (en) 1987-08-26 1987-08-26 Thin-film resistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62211984A JPS6454701A (en) 1987-08-26 1987-08-26 Thin-film resistor

Publications (1)

Publication Number Publication Date
JPS6454701A true JPS6454701A (en) 1989-03-02

Family

ID=16614965

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62211984A Pending JPS6454701A (en) 1987-08-26 1987-08-26 Thin-film resistor

Country Status (1)

Country Link
JP (1) JPS6454701A (en)

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