JPS6454443A - Negative type resist - Google Patents

Negative type resist

Info

Publication number
JPS6454443A
JPS6454443A JP20920387A JP20920387A JPS6454443A JP S6454443 A JPS6454443 A JP S6454443A JP 20920387 A JP20920387 A JP 20920387A JP 20920387 A JP20920387 A JP 20920387A JP S6454443 A JPS6454443 A JP S6454443A
Authority
JP
Japan
Prior art keywords
polysiloxane
resist
negative type
titled
type resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20920387A
Other languages
Japanese (ja)
Inventor
Toru Gokochi
Tsukasa Tada
Haruaki Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP20920387A priority Critical patent/JPS6454443A/en
Publication of JPS6454443A publication Critical patent/JPS6454443A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)

Abstract

PURPOSE:To obtain the titled resist having the high oxygen plasma durability, resolution and sensitivity against UV by incorporating a specified polysiloxane in the titled resist. CONSTITUTION:The titled resist contains the polysiloxane shown by formula I wherein R1-R3 are each methyl or phenyl group, R4-R8 are each hydrogen atom or methyl group, at least one of the groups R4-R8 is methyl group, (n) is a positive integer, (m) is 0 or a positive integer. And, a bisazide compd. is preferably incorporated in the polysiloxane. Thus, the titled resist with the high oxygen plasma durability, resolution and the good sensitivity against UV, is obtd.
JP20920387A 1987-08-25 1987-08-25 Negative type resist Pending JPS6454443A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20920387A JPS6454443A (en) 1987-08-25 1987-08-25 Negative type resist

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20920387A JPS6454443A (en) 1987-08-25 1987-08-25 Negative type resist

Publications (1)

Publication Number Publication Date
JPS6454443A true JPS6454443A (en) 1989-03-01

Family

ID=16569059

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20920387A Pending JPS6454443A (en) 1987-08-25 1987-08-25 Negative type resist

Country Status (1)

Country Link
JP (1) JPS6454443A (en)

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