JPS6452067A - Sputtering electrode having magnetic target - Google Patents

Sputtering electrode having magnetic target

Info

Publication number
JPS6452067A
JPS6452067A JP20649087A JP20649087A JPS6452067A JP S6452067 A JPS6452067 A JP S6452067A JP 20649087 A JP20649087 A JP 20649087A JP 20649087 A JP20649087 A JP 20649087A JP S6452067 A JPS6452067 A JP S6452067A
Authority
JP
Japan
Prior art keywords
target
magnetic
plasma
sputtering
coil
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20649087A
Other languages
Japanese (ja)
Inventor
Yutaka Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP20649087A priority Critical patent/JPS6452067A/en
Publication of JPS6452067A publication Critical patent/JPS6452067A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To improve the efficiency in the film formation by sputtering while prolonging the service life of the target by forming a magnetic device with an electromagnet consisting of a superconductive wire in a magnetron sputtering electrode. CONSTITUTION:The coil 3 of a sputtering electrode 7 consisting of a superconductive wire is cooled to a superconductive state. The line 16 of magnetic force generated from the coil 3 leaves a peripheral magnetic pole 17, and reaches the magnetic target 1. A part 16b of the lines 16 of magnetic force passes through the target 1, again passes through the target 1 by the strong magnetic field generated from the coil 3, and reaches a central magnetic pole 20 to form a magnetic circuit. An arcuate line 16b of magnetic force is annularly formed by the magnetic circuit on the surface of the target 1. An electric power is impressed between an anode 14 and a sputtering electroded 7 as a cathode to ionize the gas molecules in a vacuum vessel 13, and plasma 21 is produced. The electron in the plasma 21 is captured by the arcuate line 16b of magnetic force, and the probability of the collision of the electrons in the plasma on the surface of the target 1 with the gas molecules is increased. Accordingly, the ionization rate in the plasma 21 can be increased.
JP20649087A 1987-08-21 1987-08-21 Sputtering electrode having magnetic target Pending JPS6452067A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20649087A JPS6452067A (en) 1987-08-21 1987-08-21 Sputtering electrode having magnetic target

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20649087A JPS6452067A (en) 1987-08-21 1987-08-21 Sputtering electrode having magnetic target

Publications (1)

Publication Number Publication Date
JPS6452067A true JPS6452067A (en) 1989-02-28

Family

ID=16524236

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20649087A Pending JPS6452067A (en) 1987-08-21 1987-08-21 Sputtering electrode having magnetic target

Country Status (1)

Country Link
JP (1) JPS6452067A (en)

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