JPS6444084A - Two-dimensional photoamplifier - Google Patents

Two-dimensional photoamplifier

Info

Publication number
JPS6444084A
JPS6444084A JP20146787A JP20146787A JPS6444084A JP S6444084 A JPS6444084 A JP S6444084A JP 20146787 A JP20146787 A JP 20146787A JP 20146787 A JP20146787 A JP 20146787A JP S6444084 A JPS6444084 A JP S6444084A
Authority
JP
Japan
Prior art keywords
aligned
light
dimensions
optical amplifier
converting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20146787A
Other languages
Japanese (ja)
Inventor
Hiroshi Komatsu
Katsuhiro Teraishi
Tomio Sonehara
Osamu Yokoyama
Kunihiro Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP20146787A priority Critical patent/JPS6444084A/en
Publication of JPS6444084A publication Critical patent/JPS6444084A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H01S5/0608—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch
    • H01S5/0609—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch acting on an absorbing region, e.g. wavelength convertors
    • H01S5/0611—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch acting on an absorbing region, e.g. wavelength convertors wavelength convertors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)

Abstract

PURPOSE:To obtain a two-dimensional optical amplifier which can obtain a high speed response, and has a compact entirety and a light weight, by providing an optical amplifier in which surface light irradiating type semiconductor lasers aligned in two dimensions for converting electric signals into light of laser are integrated on the same semiconductor substrate. CONSTITUTION:A preoptical unit 102 for focusing an incident light, an optical amplifier 103 in which photoelectric converters 303 aligned in two dimensions for converting a focused incident light 101 into electric signal and surface light irradiating type semiconductor lasers 302 aligned in two dimensions relative to the converters 303 for converting electric signals into laser lights are integrated on the same semiconductor substrate 301, and a rear-stage optical unit 104 for shaping, correcting or enlarging the laser lights are provided. Thus, since the two-dimensional optical information can be amplified in parallel in a real time, a high speed response to the optical change is performed, and since it has a light weight and a compact structure, it can be easily carried or installed.
JP20146787A 1987-08-12 1987-08-12 Two-dimensional photoamplifier Pending JPS6444084A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20146787A JPS6444084A (en) 1987-08-12 1987-08-12 Two-dimensional photoamplifier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20146787A JPS6444084A (en) 1987-08-12 1987-08-12 Two-dimensional photoamplifier

Publications (1)

Publication Number Publication Date
JPS6444084A true JPS6444084A (en) 1989-02-16

Family

ID=16441569

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20146787A Pending JPS6444084A (en) 1987-08-12 1987-08-12 Two-dimensional photoamplifier

Country Status (1)

Country Link
JP (1) JPS6444084A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5034954A (en) * 1989-10-20 1991-07-23 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser device
US5946755A (en) * 1995-02-17 1999-09-07 Aoki Safety Footwear Co., Ltd Shoes and process for producing same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5034954A (en) * 1989-10-20 1991-07-23 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser device
US5946755A (en) * 1995-02-17 1999-09-07 Aoki Safety Footwear Co., Ltd Shoes and process for producing same

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