JPS6439657U - - Google Patents
Info
- Publication number
- JPS6439657U JPS6439657U JP13445587U JP13445587U JPS6439657U JP S6439657 U JPS6439657 U JP S6439657U JP 13445587 U JP13445587 U JP 13445587U JP 13445587 U JP13445587 U JP 13445587U JP S6439657 U JPS6439657 U JP S6439657U
- Authority
- JP
- Japan
- Prior art keywords
- diode
- type layer
- junction
- cover
- flows
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010410 layer Substances 0.000 claims description 4
- 239000011247 coating layer Substances 0.000 claims description 2
- 239000006059 cover glass Substances 0.000 claims description 2
- 239000011347 resin Substances 0.000 claims 1
- 229920005989 resin Polymers 0.000 claims 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Formation Of Insulating Films (AREA)
Description
第1図は本考案の第1実施例の断面図、第2図
は本考案の第2実施例の断面図である。
1はp形層、2はn形層、4はpn接合部、8
はシリコン系樹脂、8aは被覆層、9・12はカ
バーガラスである。
FIG. 1 is a cross-sectional view of a first embodiment of the present invention, and FIG. 2 is a cross-sectional view of a second embodiment of the present invention. 1 is a p-type layer, 2 is an n-type layer, 4 is a pn junction, 8
8a is a coating layer, and 9 and 12 are cover glasses.
Claims (1)
ともに、表面側と裏面側の少なくとも一方にカバ
ーガラスを樹脂にて接着したダイオードにおいて
、 上記樹脂によりダイオード側面へ流出してダイ
オード側面に露出したpn接合部を被覆する被覆
層を形成したことを特徴とするダイオード。[Claims for Utility Model Registration] A diode having a pn junction between a p-type layer and an n-type layer, and a cover glass bonded to at least one of the front side and the back side with a resin, A diode characterized in that a coating layer is formed to cover a pn junction portion that flows to the side surface and is exposed on the side surface of the diode.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13445587U JPS6439657U (en) | 1987-09-02 | 1987-09-02 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13445587U JPS6439657U (en) | 1987-09-02 | 1987-09-02 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6439657U true JPS6439657U (en) | 1989-03-09 |
Family
ID=31393224
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13445587U Pending JPS6439657U (en) | 1987-09-02 | 1987-09-02 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6439657U (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6094751A (en) * | 1983-10-28 | 1985-05-27 | Sumitomo Electric Ind Ltd | Diode |
JPS61151614A (en) * | 1984-12-26 | 1986-07-10 | Semiconductor Energy Lab Co Ltd | Manufacture of semiconductor device |
-
1987
- 1987-09-02 JP JP13445587U patent/JPS6439657U/ja active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6094751A (en) * | 1983-10-28 | 1985-05-27 | Sumitomo Electric Ind Ltd | Diode |
JPS61151614A (en) * | 1984-12-26 | 1986-07-10 | Semiconductor Energy Lab Co Ltd | Manufacture of semiconductor device |
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