JPS6439088A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS6439088A
JPS6439088A JP31509886A JP31509886A JPS6439088A JP S6439088 A JPS6439088 A JP S6439088A JP 31509886 A JP31509886 A JP 31509886A JP 31509886 A JP31509886 A JP 31509886A JP S6439088 A JPS6439088 A JP S6439088A
Authority
JP
Japan
Prior art keywords
light
light guide
light guides
guides
output
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP31509886A
Other languages
Japanese (ja)
Inventor
Susumu Hiuga
Yoshito Ikuwa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP31509886A priority Critical patent/JPS6439088A/en
Publication of JPS6439088A publication Critical patent/JPS6439088A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To increase the breakdown level of the optical end surface of the entire integrated light guides and to obtain high power output, by setting the width of each light guide so that the distribution of an electric field strength in each light guide becomes the same. CONSTITUTION:Three light guides are constituted with three strip grooves 8a-8c, which are formed by etching a semiconductor layer 2. A width w2 of the central light guide is made smaller than widths w1 of the light guides on both ends. This is determined by the equivalent refractive index of each light guide, the equivalent refractive index of a region between the neighboring light guides and oscillating wavelengths. Namely, the distributions of the electric field strength in a fundamental mode have the same peak value in the three light guides comprising the stripe grooves 8a-8c. Therefore, the light outputs from active regions 6a-6c, which are formed in an active layer 5 on all the stripe grooves 8a-8c, are equalized. This fact effectively contributes to the total light output. Thus, the total light output is not restricted by the breakdown level of the optical end surface of the individual light guide, and the high power output is obtained.
JP31509886A 1986-12-25 1986-12-25 Semiconductor laser device Pending JPS6439088A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP31509886A JPS6439088A (en) 1986-12-25 1986-12-25 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31509886A JPS6439088A (en) 1986-12-25 1986-12-25 Semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS6439088A true JPS6439088A (en) 1989-02-09

Family

ID=18061391

Family Applications (1)

Application Number Title Priority Date Filing Date
JP31509886A Pending JPS6439088A (en) 1986-12-25 1986-12-25 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS6439088A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008111477A1 (en) * 2007-03-09 2008-09-18 Nec Corporation Nitride semiconductor laser

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008111477A1 (en) * 2007-03-09 2008-09-18 Nec Corporation Nitride semiconductor laser

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