JPS6439088A - Semiconductor laser device - Google Patents
Semiconductor laser deviceInfo
- Publication number
- JPS6439088A JPS6439088A JP31509886A JP31509886A JPS6439088A JP S6439088 A JPS6439088 A JP S6439088A JP 31509886 A JP31509886 A JP 31509886A JP 31509886 A JP31509886 A JP 31509886A JP S6439088 A JPS6439088 A JP S6439088A
- Authority
- JP
- Japan
- Prior art keywords
- light
- light guide
- light guides
- guides
- output
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To increase the breakdown level of the optical end surface of the entire integrated light guides and to obtain high power output, by setting the width of each light guide so that the distribution of an electric field strength in each light guide becomes the same. CONSTITUTION:Three light guides are constituted with three strip grooves 8a-8c, which are formed by etching a semiconductor layer 2. A width w2 of the central light guide is made smaller than widths w1 of the light guides on both ends. This is determined by the equivalent refractive index of each light guide, the equivalent refractive index of a region between the neighboring light guides and oscillating wavelengths. Namely, the distributions of the electric field strength in a fundamental mode have the same peak value in the three light guides comprising the stripe grooves 8a-8c. Therefore, the light outputs from active regions 6a-6c, which are formed in an active layer 5 on all the stripe grooves 8a-8c, are equalized. This fact effectively contributes to the total light output. Thus, the total light output is not restricted by the breakdown level of the optical end surface of the individual light guide, and the high power output is obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31509886A JPS6439088A (en) | 1986-12-25 | 1986-12-25 | Semiconductor laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31509886A JPS6439088A (en) | 1986-12-25 | 1986-12-25 | Semiconductor laser device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6439088A true JPS6439088A (en) | 1989-02-09 |
Family
ID=18061391
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31509886A Pending JPS6439088A (en) | 1986-12-25 | 1986-12-25 | Semiconductor laser device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6439088A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008111477A1 (en) * | 2007-03-09 | 2008-09-18 | Nec Corporation | Nitride semiconductor laser |
-
1986
- 1986-12-25 JP JP31509886A patent/JPS6439088A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008111477A1 (en) * | 2007-03-09 | 2008-09-18 | Nec Corporation | Nitride semiconductor laser |
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