JPS6438700A - Ion source - Google Patents
Ion sourceInfo
- Publication number
- JPS6438700A JPS6438700A JP19416487A JP19416487A JPS6438700A JP S6438700 A JPS6438700 A JP S6438700A JP 19416487 A JP19416487 A JP 19416487A JP 19416487 A JP19416487 A JP 19416487A JP S6438700 A JPS6438700 A JP S6438700A
- Authority
- JP
- Japan
- Prior art keywords
- isotope
- ion beam
- substance
- ion source
- antimony
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electron Sources, Ion Sources (AREA)
Abstract
PURPOSE:To provide an ion source for producing a precisely controlled ion beam capable of forming a fine spot by using a substance of the same mass number which is obtained by separating a substance containing stable isotopes. CONSTITUTION:In regard to an ion source which produces an ion beam from an ionized substance, the substance which has only single mass number having a stable isotope is applied. For example, the alloy such as gold and antimony is applied. In this case only isotope preseparated <121>Sb for antimony is applied. Thereby only a kind of isotope exists in the ion beam emitted and the isotope need not be separated. Therefore, the accuracy of working can be prevented from being lowered by being separated by the ion beam on the specimen every isotope even if normal electrical field and magnetic field orthogonal mass separator is applied.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62194164A JPH0782119B2 (en) | 1987-08-03 | 1987-08-03 | Ion beam irradiation method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62194164A JPH0782119B2 (en) | 1987-08-03 | 1987-08-03 | Ion beam irradiation method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6438700A true JPS6438700A (en) | 1989-02-08 |
JPH0782119B2 JPH0782119B2 (en) | 1995-09-06 |
Family
ID=16319992
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62194164A Expired - Lifetime JPH0782119B2 (en) | 1987-08-03 | 1987-08-03 | Ion beam irradiation method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0782119B2 (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004079930A (en) * | 2002-08-22 | 2004-03-11 | Toshiba Corp | Semiconductor material, its manufacturing method, and soi type semiconductor substrate |
JP2010278004A (en) * | 2009-05-28 | 2010-12-09 | Fei Co | Dual beam system |
US9685304B2 (en) | 2009-10-27 | 2017-06-20 | Entegris, Inc. | Isotopically-enriched boron-containing compounds, and methods of making and using same |
US9764298B2 (en) | 2010-08-30 | 2017-09-19 | Entegris, Inc. | Apparatus and method for preparation of compounds or intermediates thereof from a solid material, and using such compounds and intermediates |
JP2020136653A (en) * | 2017-08-22 | 2020-08-31 | プラクスエア・テクノロジー・インコーポレイテッド | Storage and delivery of antimony-containing material to ion implantation device |
US11098402B2 (en) | 2017-08-22 | 2021-08-24 | Praxair Technology, Inc. | Storage and delivery of antimony-containing materials to an ion implanter |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58214262A (en) * | 1982-06-04 | 1983-12-13 | Hitachi Ltd | Liquid metal ion source |
JPS6295820A (en) * | 1985-10-23 | 1987-05-02 | Hitachi Ltd | Ion implanting method |
-
1987
- 1987-08-03 JP JP62194164A patent/JPH0782119B2/en not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58214262A (en) * | 1982-06-04 | 1983-12-13 | Hitachi Ltd | Liquid metal ion source |
JPS6295820A (en) * | 1985-10-23 | 1987-05-02 | Hitachi Ltd | Ion implanting method |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004079930A (en) * | 2002-08-22 | 2004-03-11 | Toshiba Corp | Semiconductor material, its manufacturing method, and soi type semiconductor substrate |
JP2010278004A (en) * | 2009-05-28 | 2010-12-09 | Fei Co | Dual beam system |
US9685304B2 (en) | 2009-10-27 | 2017-06-20 | Entegris, Inc. | Isotopically-enriched boron-containing compounds, and methods of making and using same |
US9764298B2 (en) | 2010-08-30 | 2017-09-19 | Entegris, Inc. | Apparatus and method for preparation of compounds or intermediates thereof from a solid material, and using such compounds and intermediates |
JP2020136653A (en) * | 2017-08-22 | 2020-08-31 | プラクスエア・テクノロジー・インコーポレイテッド | Storage and delivery of antimony-containing material to ion implantation device |
JP2020529519A (en) * | 2017-08-22 | 2020-10-08 | プラクスエア・テクノロジー・インコーポレイテッド | Antimony-containing material for ion implantation |
US11098402B2 (en) | 2017-08-22 | 2021-08-24 | Praxair Technology, Inc. | Storage and delivery of antimony-containing materials to an ion implanter |
Also Published As
Publication number | Publication date |
---|---|
JPH0782119B2 (en) | 1995-09-06 |
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