JPS6438700A - Ion source - Google Patents

Ion source

Info

Publication number
JPS6438700A
JPS6438700A JP19416487A JP19416487A JPS6438700A JP S6438700 A JPS6438700 A JP S6438700A JP 19416487 A JP19416487 A JP 19416487A JP 19416487 A JP19416487 A JP 19416487A JP S6438700 A JPS6438700 A JP S6438700A
Authority
JP
Japan
Prior art keywords
isotope
ion beam
substance
ion source
antimony
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP19416487A
Other languages
Japanese (ja)
Other versions
JPH0782119B2 (en
Inventor
Hiroaki Morimoto
Kunihiro Hosono
Katsuhiro Tsukamoto
Yoshinobu Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP62194164A priority Critical patent/JPH0782119B2/en
Publication of JPS6438700A publication Critical patent/JPS6438700A/en
Publication of JPH0782119B2 publication Critical patent/JPH0782119B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

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  • Electron Sources, Ion Sources (AREA)

Abstract

PURPOSE:To provide an ion source for producing a precisely controlled ion beam capable of forming a fine spot by using a substance of the same mass number which is obtained by separating a substance containing stable isotopes. CONSTITUTION:In regard to an ion source which produces an ion beam from an ionized substance, the substance which has only single mass number having a stable isotope is applied. For example, the alloy such as gold and antimony is applied. In this case only isotope preseparated <121>Sb for antimony is applied. Thereby only a kind of isotope exists in the ion beam emitted and the isotope need not be separated. Therefore, the accuracy of working can be prevented from being lowered by being separated by the ion beam on the specimen every isotope even if normal electrical field and magnetic field orthogonal mass separator is applied.
JP62194164A 1987-08-03 1987-08-03 Ion beam irradiation method Expired - Lifetime JPH0782119B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62194164A JPH0782119B2 (en) 1987-08-03 1987-08-03 Ion beam irradiation method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62194164A JPH0782119B2 (en) 1987-08-03 1987-08-03 Ion beam irradiation method

Publications (2)

Publication Number Publication Date
JPS6438700A true JPS6438700A (en) 1989-02-08
JPH0782119B2 JPH0782119B2 (en) 1995-09-06

Family

ID=16319992

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62194164A Expired - Lifetime JPH0782119B2 (en) 1987-08-03 1987-08-03 Ion beam irradiation method

Country Status (1)

Country Link
JP (1) JPH0782119B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004079930A (en) * 2002-08-22 2004-03-11 Toshiba Corp Semiconductor material, its manufacturing method, and soi type semiconductor substrate
JP2010278004A (en) * 2009-05-28 2010-12-09 Fei Co Dual beam system
US9685304B2 (en) 2009-10-27 2017-06-20 Entegris, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
US9764298B2 (en) 2010-08-30 2017-09-19 Entegris, Inc. Apparatus and method for preparation of compounds or intermediates thereof from a solid material, and using such compounds and intermediates
JP2020136653A (en) * 2017-08-22 2020-08-31 プラクスエア・テクノロジー・インコーポレイテッド Storage and delivery of antimony-containing material to ion implantation device
US11098402B2 (en) 2017-08-22 2021-08-24 Praxair Technology, Inc. Storage and delivery of antimony-containing materials to an ion implanter

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58214262A (en) * 1982-06-04 1983-12-13 Hitachi Ltd Liquid metal ion source
JPS6295820A (en) * 1985-10-23 1987-05-02 Hitachi Ltd Ion implanting method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58214262A (en) * 1982-06-04 1983-12-13 Hitachi Ltd Liquid metal ion source
JPS6295820A (en) * 1985-10-23 1987-05-02 Hitachi Ltd Ion implanting method

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004079930A (en) * 2002-08-22 2004-03-11 Toshiba Corp Semiconductor material, its manufacturing method, and soi type semiconductor substrate
JP2010278004A (en) * 2009-05-28 2010-12-09 Fei Co Dual beam system
US9685304B2 (en) 2009-10-27 2017-06-20 Entegris, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
US9764298B2 (en) 2010-08-30 2017-09-19 Entegris, Inc. Apparatus and method for preparation of compounds or intermediates thereof from a solid material, and using such compounds and intermediates
JP2020136653A (en) * 2017-08-22 2020-08-31 プラクスエア・テクノロジー・インコーポレイテッド Storage and delivery of antimony-containing material to ion implantation device
JP2020529519A (en) * 2017-08-22 2020-10-08 プラクスエア・テクノロジー・インコーポレイテッド Antimony-containing material for ion implantation
US11098402B2 (en) 2017-08-22 2021-08-24 Praxair Technology, Inc. Storage and delivery of antimony-containing materials to an ion implanter

Also Published As

Publication number Publication date
JPH0782119B2 (en) 1995-09-06

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