JPS6437499A - Superconductor - Google Patents

Superconductor

Info

Publication number
JPS6437499A
JPS6437499A JP62192931A JP19293187A JPS6437499A JP S6437499 A JPS6437499 A JP S6437499A JP 62192931 A JP62192931 A JP 62192931A JP 19293187 A JP19293187 A JP 19293187A JP S6437499 A JPS6437499 A JP S6437499A
Authority
JP
Japan
Prior art keywords
coating film
substrate
film
caf2
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62192931A
Other languages
Japanese (ja)
Inventor
Kazuhiro Okawa
Osamu Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP62192931A priority Critical patent/JPS6437499A/en
Publication of JPS6437499A publication Critical patent/JPS6437499A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming superconductor layers
    • H10N60/0576—Processes for depositing or forming superconductor layers characterised by the substrate
    • H10N60/0604—Monocrystalline substrates, e.g. epitaxial growth

Abstract

PURPOSE:To obtain a dense compound thin film superconductor having large electric current density and good quality, by depositing a crystalline coating film and specific oxide coating film on an epitaxial film formed on a substrate. CONSTITUTION:An epitaxial film 11 having same component as a substrate 1 such as cleaned silicon, Ge, GaAs, GaN, GaP, InP or InAs is formed on the fine and uneven surface 20 of the substrate 1 to form the surface into flat and then a crystalline coating film 12 consisting of CaF2, BaF2, SrF2 or CaF2 type crystal or compound thereof is formed thereon. Successively a superconducting thin film 13 being an oxide containing A element (A is Sc, Y or lantanoid system element having 57-71 atomic number), B element (B is at least one kind of element selected from IIa element) and Cu and consisting of an oxide coating film having a mole ratio of the element expressed by the equation is formed.
JP62192931A 1987-07-31 1987-07-31 Superconductor Pending JPS6437499A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62192931A JPS6437499A (en) 1987-07-31 1987-07-31 Superconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62192931A JPS6437499A (en) 1987-07-31 1987-07-31 Superconductor

Publications (1)

Publication Number Publication Date
JPS6437499A true JPS6437499A (en) 1989-02-08

Family

ID=16299377

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62192931A Pending JPS6437499A (en) 1987-07-31 1987-07-31 Superconductor

Country Status (1)

Country Link
JP (1) JPS6437499A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02175860A (en) * 1988-02-05 1990-07-09 Sanyo Electric Co Ltd Production of thin oxide superconducting film
EP0401031A3 (en) * 1989-05-31 1991-04-17 Kabushiki Kaisha Toshiba Oxide thin film and method of epitaxially growing same
US5039626A (en) * 1988-10-04 1991-08-13 University Of Tokyo Method for heteroepitaxial growth of a two-dimensional material on a three-dimensional material

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02175860A (en) * 1988-02-05 1990-07-09 Sanyo Electric Co Ltd Production of thin oxide superconducting film
US5039626A (en) * 1988-10-04 1991-08-13 University Of Tokyo Method for heteroepitaxial growth of a two-dimensional material on a three-dimensional material
EP0401031A3 (en) * 1989-05-31 1991-04-17 Kabushiki Kaisha Toshiba Oxide thin film and method of epitaxially growing same

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