JPS6437410A - Production of doped high-purity granular silicon - Google Patents
Production of doped high-purity granular siliconInfo
- Publication number
- JPS6437410A JPS6437410A JP19020287A JP19020287A JPS6437410A JP S6437410 A JPS6437410 A JP S6437410A JP 19020287 A JP19020287 A JP 19020287A JP 19020287 A JP19020287 A JP 19020287A JP S6437410 A JPS6437410 A JP S6437410A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- line
- doping substance
- production
- compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE:To obtain the titled silicon having uniform and definite electrical characteristics and high utilization efficiency and suitable for the production of doped silicon single crystal, by adding a gaseous doping substance to a vapor stream of raw silicon compound and reacting the compound in flowing state. CONSTITUTION:A fluidized bed reaction column 5 furnished with a heating means 6 is charged with separately prepared seed particles 4. H2 gas and/or inert gas such as Ar or He are introduced into the reactor through a line 3 as a carrier gas to form a fluidized bed. The reactor is supplied with raw silicon compounds such as silanes or halogenated silanes through the line 1 and with vapor of a compound containing a P-type doping substance (e.g. BCl3 or AlCl3) or an N-type doping substance (e.g. PCl3 or POCl) through the line 2 and the introduced substances are made to react with each other to deposit the titled silicon on the suspending seed particles 4.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19020287A JPS6437410A (en) | 1987-07-31 | 1987-07-31 | Production of doped high-purity granular silicon |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19020287A JPS6437410A (en) | 1987-07-31 | 1987-07-31 | Production of doped high-purity granular silicon |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6437410A true JPS6437410A (en) | 1989-02-08 |
Family
ID=16254155
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP19020287A Pending JPS6437410A (en) | 1987-07-31 | 1987-07-31 | Production of doped high-purity granular silicon |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6437410A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003511338A (en) * | 1999-10-11 | 2003-03-25 | ソーラーワールド・アクチエンゲゼルシヤフト | Method for producing high purity particulate silicon at low pressure |
-
1987
- 1987-07-31 JP JP19020287A patent/JPS6437410A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003511338A (en) * | 1999-10-11 | 2003-03-25 | ソーラーワールド・アクチエンゲゼルシヤフト | Method for producing high purity particulate silicon at low pressure |
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