JPS6437410A - Production of doped high-purity granular silicon - Google Patents

Production of doped high-purity granular silicon

Info

Publication number
JPS6437410A
JPS6437410A JP19020287A JP19020287A JPS6437410A JP S6437410 A JPS6437410 A JP S6437410A JP 19020287 A JP19020287 A JP 19020287A JP 19020287 A JP19020287 A JP 19020287A JP S6437410 A JPS6437410 A JP S6437410A
Authority
JP
Japan
Prior art keywords
silicon
line
doping substance
production
compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19020287A
Other languages
Japanese (ja)
Inventor
Tadao Ito
Michio Kida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Metal Corp
Original Assignee
Mitsubishi Metal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Metal Corp filed Critical Mitsubishi Metal Corp
Priority to JP19020287A priority Critical patent/JPS6437410A/en
Publication of JPS6437410A publication Critical patent/JPS6437410A/en
Pending legal-status Critical Current

Links

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  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To obtain the titled silicon having uniform and definite electrical characteristics and high utilization efficiency and suitable for the production of doped silicon single crystal, by adding a gaseous doping substance to a vapor stream of raw silicon compound and reacting the compound in flowing state. CONSTITUTION:A fluidized bed reaction column 5 furnished with a heating means 6 is charged with separately prepared seed particles 4. H2 gas and/or inert gas such as Ar or He are introduced into the reactor through a line 3 as a carrier gas to form a fluidized bed. The reactor is supplied with raw silicon compounds such as silanes or halogenated silanes through the line 1 and with vapor of a compound containing a P-type doping substance (e.g. BCl3 or AlCl3) or an N-type doping substance (e.g. PCl3 or POCl) through the line 2 and the introduced substances are made to react with each other to deposit the titled silicon on the suspending seed particles 4.
JP19020287A 1987-07-31 1987-07-31 Production of doped high-purity granular silicon Pending JPS6437410A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19020287A JPS6437410A (en) 1987-07-31 1987-07-31 Production of doped high-purity granular silicon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19020287A JPS6437410A (en) 1987-07-31 1987-07-31 Production of doped high-purity granular silicon

Publications (1)

Publication Number Publication Date
JPS6437410A true JPS6437410A (en) 1989-02-08

Family

ID=16254155

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19020287A Pending JPS6437410A (en) 1987-07-31 1987-07-31 Production of doped high-purity granular silicon

Country Status (1)

Country Link
JP (1) JPS6437410A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003511338A (en) * 1999-10-11 2003-03-25 ソーラーワールド・アクチエンゲゼルシヤフト Method for producing high purity particulate silicon at low pressure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003511338A (en) * 1999-10-11 2003-03-25 ソーラーワールド・アクチエンゲゼルシヤフト Method for producing high purity particulate silicon at low pressure

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