JPS6436048A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6436048A
JPS6436048A JP19190587A JP19190587A JPS6436048A JP S6436048 A JPS6436048 A JP S6436048A JP 19190587 A JP19190587 A JP 19190587A JP 19190587 A JP19190587 A JP 19190587A JP S6436048 A JPS6436048 A JP S6436048A
Authority
JP
Japan
Prior art keywords
crystal
insulating film
defect
crystal silicon
epitaxial growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19190587A
Other languages
English (en)
Inventor
Juri Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP19190587A priority Critical patent/JPS6436048A/ja
Publication of JPS6436048A publication Critical patent/JPS6436048A/ja
Pending legal-status Critical Current

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  • Recrystallisation Techniques (AREA)
JP19190587A 1987-07-31 1987-07-31 Semiconductor device Pending JPS6436048A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19190587A JPS6436048A (en) 1987-07-31 1987-07-31 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19190587A JPS6436048A (en) 1987-07-31 1987-07-31 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6436048A true JPS6436048A (en) 1989-02-07

Family

ID=16282399

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19190587A Pending JPS6436048A (en) 1987-07-31 1987-07-31 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6436048A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5306385A (en) * 1992-09-15 1994-04-26 Texas Instruments Incorporated Method for generating photoluminescence emission lines from transition element doped CAF2 thin films over a Si-based substrate

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5306385A (en) * 1992-09-15 1994-04-26 Texas Instruments Incorporated Method for generating photoluminescence emission lines from transition element doped CAF2 thin films over a Si-based substrate
US5552667A (en) * 1992-09-15 1996-09-03 Texas Instrument Incorporated Apparatus and method for generating photluminescence emission lines from rare-earth-element-doped CAF2 thin films over a SI-based substrate

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