JPS6435916U - - Google Patents
Info
- Publication number
- JPS6435916U JPS6435916U JP13196087U JP13196087U JPS6435916U JP S6435916 U JPS6435916 U JP S6435916U JP 13196087 U JP13196087 U JP 13196087U JP 13196087 U JP13196087 U JP 13196087U JP S6435916 U JPS6435916 U JP S6435916U
- Authority
- JP
- Japan
- Prior art keywords
- umbrella
- indicates
- utility
- scope
- view
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000002265 prevention Effects 0.000 description 1
Landscapes
- Walking Sticks, Umbrellas, And Fans (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13196087U JPS6435916U (lt) | 1987-08-28 | 1987-08-28 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13196087U JPS6435916U (lt) | 1987-08-28 | 1987-08-28 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6435916U true JPS6435916U (lt) | 1989-03-03 |
Family
ID=31388498
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13196087U Pending JPS6435916U (lt) | 1987-08-28 | 1987-08-28 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6435916U (lt) |
Cited By (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8846517B2 (en) | 2012-07-06 | 2014-09-30 | Micron Technology, Inc. | Methods of forming a pattern on a substrate |
US8852851B2 (en) | 2006-07-10 | 2014-10-07 | Micron Technology, Inc. | Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same |
US8859362B2 (en) | 2005-03-28 | 2014-10-14 | Micron Technology, Inc. | Integrated circuit fabrication |
US8865598B2 (en) | 2005-06-02 | 2014-10-21 | Micron Technology, Inc. | Method for positioning spacers in pitch multiplication |
US8871648B2 (en) | 2007-12-06 | 2014-10-28 | Micron Technology, Inc. | Method for forming high density patterns |
US8871646B2 (en) | 2008-11-24 | 2014-10-28 | Micron Technology, Inc. | Methods of forming a masking pattern for integrated circuits |
US8889020B2 (en) | 2006-04-25 | 2014-11-18 | Micron Technology, Inc. | Process for improving critical dimension uniformity of integrated circuit arrays |
US8895232B2 (en) | 2004-09-01 | 2014-11-25 | Micron Technology, Inc. | Mask material conversion |
US8901700B2 (en) | 2008-05-05 | 2014-12-02 | Micron Technology, Inc. | Semiconductor structures |
US8928111B2 (en) | 2008-07-03 | 2015-01-06 | Micron Technology, Inc. | Transistor with high breakdown voltage having separated drain extensions |
US8932960B2 (en) | 2007-12-18 | 2015-01-13 | Micron Technology, Inc. | Methods for isolating portions of a loop of pitch-multiplied material and related structures |
US9003651B2 (en) | 2005-09-01 | 2015-04-14 | Micron Technology, Inc. | Methods for integrated circuit fabrication with protective coating for planarization |
US9035416B2 (en) | 2006-09-14 | 2015-05-19 | Micron Technology, Inc. | Efficient pitch multiplication process |
US9099402B2 (en) | 2005-05-23 | 2015-08-04 | Micron Technology, Inc. | Integrated circuit structure having arrays of small, closely spaced features |
US9099314B2 (en) | 2005-09-01 | 2015-08-04 | Micron Technology, Inc. | Pitch multiplication spacers and methods of forming the same |
US9153458B2 (en) | 2011-05-05 | 2015-10-06 | Micron Technology, Inc. | Methods of forming a pattern on a substrate |
US9177794B2 (en) | 2012-01-13 | 2015-11-03 | Micron Technology, Inc. | Methods of patterning substrates |
US9184159B2 (en) | 2006-04-07 | 2015-11-10 | Micron Technology, Inc. | Simplified pitch doubling process flow |
US9330934B2 (en) | 2009-05-18 | 2016-05-03 | Micron Technology, Inc. | Methods of forming patterns on substrates |
US9412591B2 (en) | 2007-07-31 | 2016-08-09 | Micron Technology, Inc. | Process of semiconductor fabrication with mask overlay on pitch multiplied features and associated structures |
US9478497B2 (en) | 2006-08-30 | 2016-10-25 | Micron Technology, Inc. | Single spacer process for multiplying pitch by a factor greater than two and related intermediate IC structures |
-
1987
- 1987-08-28 JP JP13196087U patent/JPS6435916U/ja active Pending
Cited By (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8895232B2 (en) | 2004-09-01 | 2014-11-25 | Micron Technology, Inc. | Mask material conversion |
US8859362B2 (en) | 2005-03-28 | 2014-10-14 | Micron Technology, Inc. | Integrated circuit fabrication |
US9147608B2 (en) | 2005-03-28 | 2015-09-29 | Micron Technology, Inc. | Integrated circuit fabrication |
US9412594B2 (en) | 2005-03-28 | 2016-08-09 | Micron Technology, Inc. | Integrated circuit fabrication |
US9099402B2 (en) | 2005-05-23 | 2015-08-04 | Micron Technology, Inc. | Integrated circuit structure having arrays of small, closely spaced features |
US8865598B2 (en) | 2005-06-02 | 2014-10-21 | Micron Technology, Inc. | Method for positioning spacers in pitch multiplication |
US9117766B2 (en) | 2005-06-02 | 2015-08-25 | Micron Technology, Inc. | Method for positioning spacers in pitch multiplication |
US9099314B2 (en) | 2005-09-01 | 2015-08-04 | Micron Technology, Inc. | Pitch multiplication spacers and methods of forming the same |
US9003651B2 (en) | 2005-09-01 | 2015-04-14 | Micron Technology, Inc. | Methods for integrated circuit fabrication with protective coating for planarization |
US9184159B2 (en) | 2006-04-07 | 2015-11-10 | Micron Technology, Inc. | Simplified pitch doubling process flow |
US8889020B2 (en) | 2006-04-25 | 2014-11-18 | Micron Technology, Inc. | Process for improving critical dimension uniformity of integrated circuit arrays |
US9553082B2 (en) | 2006-04-25 | 2017-01-24 | Micron Technology, Inc. | Process for improving critical dimension uniformity of integrated circuit arrays |
US9305782B2 (en) | 2006-07-10 | 2016-04-05 | Micron Technology, Inc. | Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same |
US8852851B2 (en) | 2006-07-10 | 2014-10-07 | Micron Technology, Inc. | Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same |
US9478497B2 (en) | 2006-08-30 | 2016-10-25 | Micron Technology, Inc. | Single spacer process for multiplying pitch by a factor greater than two and related intermediate IC structures |
US9035416B2 (en) | 2006-09-14 | 2015-05-19 | Micron Technology, Inc. | Efficient pitch multiplication process |
US9412591B2 (en) | 2007-07-31 | 2016-08-09 | Micron Technology, Inc. | Process of semiconductor fabrication with mask overlay on pitch multiplied features and associated structures |
US8871648B2 (en) | 2007-12-06 | 2014-10-28 | Micron Technology, Inc. | Method for forming high density patterns |
US8932960B2 (en) | 2007-12-18 | 2015-01-13 | Micron Technology, Inc. | Methods for isolating portions of a loop of pitch-multiplied material and related structures |
US8901700B2 (en) | 2008-05-05 | 2014-12-02 | Micron Technology, Inc. | Semiconductor structures |
US8928111B2 (en) | 2008-07-03 | 2015-01-06 | Micron Technology, Inc. | Transistor with high breakdown voltage having separated drain extensions |
US8871646B2 (en) | 2008-11-24 | 2014-10-28 | Micron Technology, Inc. | Methods of forming a masking pattern for integrated circuits |
US9330934B2 (en) | 2009-05-18 | 2016-05-03 | Micron Technology, Inc. | Methods of forming patterns on substrates |
US9153458B2 (en) | 2011-05-05 | 2015-10-06 | Micron Technology, Inc. | Methods of forming a pattern on a substrate |
US9177794B2 (en) | 2012-01-13 | 2015-11-03 | Micron Technology, Inc. | Methods of patterning substrates |
US8846517B2 (en) | 2012-07-06 | 2014-09-30 | Micron Technology, Inc. | Methods of forming a pattern on a substrate |