JPS6435916U - - Google Patents

Info

Publication number
JPS6435916U
JPS6435916U JP13196087U JP13196087U JPS6435916U JP S6435916 U JPS6435916 U JP S6435916U JP 13196087 U JP13196087 U JP 13196087U JP 13196087 U JP13196087 U JP 13196087U JP S6435916 U JPS6435916 U JP S6435916U
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13196087U
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP13196087U priority Critical patent/JPS6435916U/ja
Publication of JPS6435916U publication Critical patent/JPS6435916U/ja
Application status is Pending legal-status Critical

Links

JP13196087U 1987-08-28 1987-08-28 Pending JPS6435916U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13196087U JPS6435916U (en) 1987-08-28 1987-08-28

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13196087U JPS6435916U (en) 1987-08-28 1987-08-28

Publications (1)

Publication Number Publication Date
JPS6435916U true JPS6435916U (en) 1989-03-03

Family

ID=31388498

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13196087U Pending JPS6435916U (en) 1987-08-28 1987-08-28

Country Status (1)

Country Link
JP (1) JPS6435916U (en)

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8846517B2 (en) 2012-07-06 2014-09-30 Micron Technology, Inc. Methods of forming a pattern on a substrate
US8852851B2 (en) 2006-07-10 2014-10-07 Micron Technology, Inc. Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same
US8859362B2 (en) 2005-03-28 2014-10-14 Micron Technology, Inc. Integrated circuit fabrication
US8871646B2 (en) 2008-11-24 2014-10-28 Micron Technology, Inc. Methods of forming a masking pattern for integrated circuits
US8871648B2 (en) 2007-12-06 2014-10-28 Micron Technology, Inc. Method for forming high density patterns
US8883644B2 (en) 2006-08-30 2014-11-11 Micron Technology, Inc. Single spacer process for multiplying pitch by a factor greater than two and related intermediate IC structures
US8889020B2 (en) 2006-04-25 2014-11-18 Micron Technology, Inc. Process for improving critical dimension uniformity of integrated circuit arrays
US8901700B2 (en) 2008-05-05 2014-12-02 Micron Technology, Inc. Semiconductor structures
US8928111B2 (en) 2008-07-03 2015-01-06 Micron Technology, Inc. Transistor with high breakdown voltage having separated drain extensions
US8932960B2 (en) 2007-12-18 2015-01-13 Micron Technology, Inc. Methods for isolating portions of a loop of pitch-multiplied material and related structures
US9003651B2 (en) 2005-09-01 2015-04-14 Micron Technology, Inc. Methods for integrated circuit fabrication with protective coating for planarization
US9035416B2 (en) 2006-09-14 2015-05-19 Micron Technology, Inc. Efficient pitch multiplication process
US9099314B2 (en) 2005-09-01 2015-08-04 Micron Technology, Inc. Pitch multiplication spacers and methods of forming the same
US9099402B2 (en) 2005-05-23 2015-08-04 Micron Technology, Inc. Integrated circuit structure having arrays of small, closely spaced features
US9117766B2 (en) 2005-06-02 2015-08-25 Micron Technology, Inc. Method for positioning spacers in pitch multiplication
US9153458B2 (en) 2011-05-05 2015-10-06 Micron Technology, Inc. Methods of forming a pattern on a substrate
US9177794B2 (en) 2012-01-13 2015-11-03 Micron Technology, Inc. Methods of patterning substrates
US9184159B2 (en) 2006-04-07 2015-11-10 Micron Technology, Inc. Simplified pitch doubling process flow
US9330934B2 (en) 2009-05-18 2016-05-03 Micron Technology, Inc. Methods of forming patterns on substrates
US9412591B2 (en) 2007-07-31 2016-08-09 Micron Technology, Inc. Process of semiconductor fabrication with mask overlay on pitch multiplied features and associated structures

Cited By (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9412594B2 (en) 2005-03-28 2016-08-09 Micron Technology, Inc. Integrated circuit fabrication
US8859362B2 (en) 2005-03-28 2014-10-14 Micron Technology, Inc. Integrated circuit fabrication
US9147608B2 (en) 2005-03-28 2015-09-29 Micron Technology, Inc. Integrated circuit fabrication
US9099402B2 (en) 2005-05-23 2015-08-04 Micron Technology, Inc. Integrated circuit structure having arrays of small, closely spaced features
US9117766B2 (en) 2005-06-02 2015-08-25 Micron Technology, Inc. Method for positioning spacers in pitch multiplication
US9003651B2 (en) 2005-09-01 2015-04-14 Micron Technology, Inc. Methods for integrated circuit fabrication with protective coating for planarization
US9099314B2 (en) 2005-09-01 2015-08-04 Micron Technology, Inc. Pitch multiplication spacers and methods of forming the same
US9184159B2 (en) 2006-04-07 2015-11-10 Micron Technology, Inc. Simplified pitch doubling process flow
US8889020B2 (en) 2006-04-25 2014-11-18 Micron Technology, Inc. Process for improving critical dimension uniformity of integrated circuit arrays
US9553082B2 (en) 2006-04-25 2017-01-24 Micron Technology, Inc. Process for improving critical dimension uniformity of integrated circuit arrays
US9305782B2 (en) 2006-07-10 2016-04-05 Micron Technology, Inc. Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same
US8852851B2 (en) 2006-07-10 2014-10-07 Micron Technology, Inc. Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same
US8883644B2 (en) 2006-08-30 2014-11-11 Micron Technology, Inc. Single spacer process for multiplying pitch by a factor greater than two and related intermediate IC structures
US9478497B2 (en) 2006-08-30 2016-10-25 Micron Technology, Inc. Single spacer process for multiplying pitch by a factor greater than two and related intermediate IC structures
US9035416B2 (en) 2006-09-14 2015-05-19 Micron Technology, Inc. Efficient pitch multiplication process
US9412591B2 (en) 2007-07-31 2016-08-09 Micron Technology, Inc. Process of semiconductor fabrication with mask overlay on pitch multiplied features and associated structures
US8871648B2 (en) 2007-12-06 2014-10-28 Micron Technology, Inc. Method for forming high density patterns
US8932960B2 (en) 2007-12-18 2015-01-13 Micron Technology, Inc. Methods for isolating portions of a loop of pitch-multiplied material and related structures
US8901700B2 (en) 2008-05-05 2014-12-02 Micron Technology, Inc. Semiconductor structures
US8928111B2 (en) 2008-07-03 2015-01-06 Micron Technology, Inc. Transistor with high breakdown voltage having separated drain extensions
US8871646B2 (en) 2008-11-24 2014-10-28 Micron Technology, Inc. Methods of forming a masking pattern for integrated circuits
US9330934B2 (en) 2009-05-18 2016-05-03 Micron Technology, Inc. Methods of forming patterns on substrates
US9153458B2 (en) 2011-05-05 2015-10-06 Micron Technology, Inc. Methods of forming a pattern on a substrate
US9177794B2 (en) 2012-01-13 2015-11-03 Micron Technology, Inc. Methods of patterning substrates
US8846517B2 (en) 2012-07-06 2014-09-30 Micron Technology, Inc. Methods of forming a pattern on a substrate

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