JPS6433842A - Ion implanter - Google Patents

Ion implanter

Info

Publication number
JPS6433842A
JPS6433842A JP62190649A JP19064987A JPS6433842A JP S6433842 A JPS6433842 A JP S6433842A JP 62190649 A JP62190649 A JP 62190649A JP 19064987 A JP19064987 A JP 19064987A JP S6433842 A JPS6433842 A JP S6433842A
Authority
JP
Japan
Prior art keywords
ion
charge
energy
generation
increase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62190649A
Other languages
Japanese (ja)
Inventor
Atsuo Shimizu
Kazuhiro Kanbara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP62190649A priority Critical patent/JPS6433842A/en
Publication of JPS6433842A publication Critical patent/JPS6433842A/en
Pending legal-status Critical Current

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  • Electron Sources, Ion Sources (AREA)

Abstract

PURPOSE:To increase the generation of an ion species with a charge more than a double charge and improve the ion generation efficiency by irradiating the light with the energy more than the difference between the second ionization energy and the first ionization energy to the single-charge ion flux generated by an ion source. CONSTITUTION:The light with the energy more than the difference between the second ionization energy and the first ionization energy is irradiated to the single-charge ion M<+> flux generated by an ion source to increase the generation of an ion species with a charge more than a double charge M<++>. The light energy (nu) is radiated to the ion flux generated by the ion source and flying as M<+> to excite it into M<++>, an ion implanter can increase the generation factor of ions with a charge more than a double charge, the ion generation efficiency is improved, and the implanter is made small-sized.
JP62190649A 1987-07-29 1987-07-29 Ion implanter Pending JPS6433842A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62190649A JPS6433842A (en) 1987-07-29 1987-07-29 Ion implanter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62190649A JPS6433842A (en) 1987-07-29 1987-07-29 Ion implanter

Publications (1)

Publication Number Publication Date
JPS6433842A true JPS6433842A (en) 1989-02-03

Family

ID=16261596

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62190649A Pending JPS6433842A (en) 1987-07-29 1987-07-29 Ion implanter

Country Status (1)

Country Link
JP (1) JPS6433842A (en)

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