JPS6430829U - - Google Patents
Info
- Publication number
- JPS6430829U JPS6430829U JP12716887U JP12716887U JPS6430829U JP S6430829 U JPS6430829 U JP S6430829U JP 12716887 U JP12716887 U JP 12716887U JP 12716887 U JP12716887 U JP 12716887U JP S6430829 U JPS6430829 U JP S6430829U
- Authority
- JP
- Japan
- Prior art keywords
- cathode
- opening
- reactive ion
- wafer
- ion etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001020 plasma etching Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 2
- 230000037431 insertion Effects 0.000 claims description 2
- 238000003780 insertion Methods 0.000 claims description 2
- 239000011368 organic material Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12716887U JPS6430829U (ru) | 1987-08-20 | 1987-08-20 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12716887U JPS6430829U (ru) | 1987-08-20 | 1987-08-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6430829U true JPS6430829U (ru) | 1989-02-27 |
Family
ID=31379351
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12716887U Pending JPS6430829U (ru) | 1987-08-20 | 1987-08-20 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6430829U (ru) |
-
1987
- 1987-08-20 JP JP12716887U patent/JPS6430829U/ja active Pending