JPS6427277A - Arrayed semiconductor photodetector - Google Patents
Arrayed semiconductor photodetectorInfo
- Publication number
- JPS6427277A JPS6427277A JP62184171A JP18417187A JPS6427277A JP S6427277 A JPS6427277 A JP S6427277A JP 62184171 A JP62184171 A JP 62184171A JP 18417187 A JP18417187 A JP 18417187A JP S6427277 A JPS6427277 A JP S6427277A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- substrate electrode
- junctions
- arrayed
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Light Receiving Elements (AREA)
- Photovoltaic Devices (AREA)
Abstract
PURPOSE:To provide an arrayed semiconductor photodetector having improved unifomity in photosensitivity over the surface and higher precision, by forming a semiconductor substrate electrode on the surface of a substrate such that all the photodetecting sections are spaced from the semiconductor substrate electrode by an equal distance. CONSTITUTION:A semiconductor substrate electrode 9 is deposited on the surface of a substrate 1 and patterned in checkers such that it is between all the pairs of adjacent photodetecting sections. Thus, all the PN junctions 3 providing the photodetecting sections are spaced from the semiconductor substrate electrode 9 by an equal distance. Further, difference in potential due to substrate resistance is also equal in all the PN junctions 3. Accordingly, it is possible to provide an arrayed semiconductor photodetector allowing incident light to be applied to the rear face of its P-type compound semiconductor substrate and presenting negligible variance in potential which is determined by substrate resistance from the PN junctions to the P-type compound semiconductor substrate electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62184171A JPS6427277A (en) | 1987-07-22 | 1987-07-22 | Arrayed semiconductor photodetector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62184171A JPS6427277A (en) | 1987-07-22 | 1987-07-22 | Arrayed semiconductor photodetector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6427277A true JPS6427277A (en) | 1989-01-30 |
Family
ID=16148607
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62184171A Pending JPS6427277A (en) | 1987-07-22 | 1987-07-22 | Arrayed semiconductor photodetector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6427277A (en) |
-
1987
- 1987-07-22 JP JP62184171A patent/JPS6427277A/en active Pending
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