JPS6427276A - Semiconductor photocoupler device - Google Patents
Semiconductor photocoupler deviceInfo
- Publication number
- JPS6427276A JPS6427276A JP62184159A JP18415987A JPS6427276A JP S6427276 A JPS6427276 A JP S6427276A JP 62184159 A JP62184159 A JP 62184159A JP 18415987 A JP18415987 A JP 18415987A JP S6427276 A JPS6427276 A JP S6427276A
- Authority
- JP
- Japan
- Prior art keywords
- hole
- barrel
- photodetector
- light
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 230000002093 peripheral effect Effects 0.000 abstract 3
- 239000011347 resin Substances 0.000 abstract 3
- 229920005989 resin Polymers 0.000 abstract 3
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To make it possible to stably increase a creeping distance between a light-emitting portion and a photodetector portion, by providing a transparent insulating film having a through hole at a center portion and barrel-shaped walls provided from a peripheral portion of the hole in the middle of a transparent resin connecting a light-emitting element to a photodetector. CONSTITUTION:There is provided a transparent insulating film 7 having a through hole 10 at a center portion and barrel-shaped walls 11 and 12 of a cylindrical configuration and the like provided from the peripheral portion of the hole in the middle of a transparent resin 4 optically connecting a light- emitting element 1 to a photodetector element 2. As a result, by the through hole in the middle and the barrel-shaped wall in the peripheral portion of the hole, when the transparent insulating film is inserted into the middle of the transparent resin, its disposed position is naturally determined and stabilized by its surface tension and also a creeping distance between the light-emitting portion and the photodetector portion can be appropriately and sufficiently secured by the surface of the barrel-shaped wall.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62184159A JPS6427276A (en) | 1987-07-22 | 1987-07-22 | Semiconductor photocoupler device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62184159A JPS6427276A (en) | 1987-07-22 | 1987-07-22 | Semiconductor photocoupler device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6427276A true JPS6427276A (en) | 1989-01-30 |
Family
ID=16148396
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62184159A Pending JPS6427276A (en) | 1987-07-22 | 1987-07-22 | Semiconductor photocoupler device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6427276A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19920403B4 (en) * | 1998-10-08 | 2008-02-14 | Endress + Hauser Gmbh + Co. Kg | Optoelectronic coupler |
-
1987
- 1987-07-22 JP JP62184159A patent/JPS6427276A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19920403B4 (en) * | 1998-10-08 | 2008-02-14 | Endress + Hauser Gmbh + Co. Kg | Optoelectronic coupler |
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