JPS6425232U - - Google Patents

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Publication number
JPS6425232U
JPS6425232U JP12055887U JP12055887U JPS6425232U JP S6425232 U JPS6425232 U JP S6425232U JP 12055887 U JP12055887 U JP 12055887U JP 12055887 U JP12055887 U JP 12055887U JP S6425232 U JPS6425232 U JP S6425232U
Authority
JP
Japan
Prior art keywords
circuit
semiconductor switch
power mosfet
switch circuit
resonant circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12055887U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP12055887U priority Critical patent/JPS6425232U/ja
Publication of JPS6425232U publication Critical patent/JPS6425232U/ja
Pending legal-status Critical Current

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  • Electronic Switches (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案の第1の実施例、第2図は第2
の実施例、第3図は第3の実施例、第4図は従来
のスイツチ回路である。 1……インダクタンス、2……キヤパシタンス
、3……電力用MOSFET、4,8……抵抗、
5……駆動回路、6……負荷、7……電源。
Figure 1 shows the first embodiment of the present invention, Figure 2 shows the second embodiment.
3 shows a third embodiment, and FIG. 4 shows a conventional switch circuit. 1...Inductance, 2...Capacitance, 3...Power MOSFET, 4, 8...Resistance,
5...Drive circuit, 6...Load, 7...Power supply.

Claims (1)

【実用新案登録請求の範囲】 (1) 電力用MOSFETのスイツチ回路におい
てインダクタンスとキヤパシタンスとからなる異
常発振周波数に同調した固有周波数をもつ共振回
路を含むことを特徴とする半導体スイツチ回路。 (2) 前記電力用MOSFETの駆動回路に前記
共振回路を含むことを特徴とする実用新案登録請
求の範囲第1項記載の半導体スイツチ回路。 (3) 前記電力用MOSFETの出力回路に前記
共振回路を含むことを特徴とする実用新案登録請
求の範囲第1項記載の半導体スイツチ回路。
[Claims for Utility Model Registration] (1) A semiconductor switch circuit of a power MOSFET, characterized in that it includes a resonant circuit having a natural frequency tuned to an abnormal oscillation frequency made up of inductance and capacitance. (2) The semiconductor switch circuit according to claim 1, wherein a drive circuit for the power MOSFET includes the resonant circuit. (3) The semiconductor switch circuit according to claim 1, wherein the output circuit of the power MOSFET includes the resonant circuit.
JP12055887U 1987-08-05 1987-08-05 Pending JPS6425232U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12055887U JPS6425232U (en) 1987-08-05 1987-08-05

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12055887U JPS6425232U (en) 1987-08-05 1987-08-05

Publications (1)

Publication Number Publication Date
JPS6425232U true JPS6425232U (en) 1989-02-13

Family

ID=31366775

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12055887U Pending JPS6425232U (en) 1987-08-05 1987-08-05

Country Status (1)

Country Link
JP (1) JPS6425232U (en)

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