JPS6421908A - Material for magnetooptic element - Google Patents
Material for magnetooptic elementInfo
- Publication number
- JPS6421908A JPS6421908A JP17727187A JP17727187A JPS6421908A JP S6421908 A JPS6421908 A JP S6421908A JP 17727187 A JP17727187 A JP 17727187A JP 17727187 A JP17727187 A JP 17727187A JP S6421908 A JPS6421908 A JP S6421908A
- Authority
- JP
- Japan
- Prior art keywords
- grown
- 30mum
- in2o3
- fe2o3
- band
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Thin Magnetic Films (AREA)
Abstract
PURPOSE:To improve performance index theta/alpha in a 0.8mum band, by adding In<3+> in an iron garnet crystal and the like, and reducing light absorption in the 0.8mum band, wherein the effect of absorption of Fe<3+> in 0.7 and 0.9mum bands is liable to receive. CONSTITUTION:A film growing surface is grown on a nonmagnetic garnet substrate. Light is orthogonally inputted into the surface of film growing surface of an orthogonal input type optical isolator material. The material is grown by a liquid phase epitaxial method. The film thickness is 30mum or longer. The composition ratio of the material is substantially (R3-xBix)(Fe5-yIny)O12 (where x=0.5-1.5 and y=0.01-1.0). Such a material is used. For example, (YBi)3(FeIn)5 O12 is grown on a (GdCa)3(GaZrMg)5O12 substrate from PbO-Bi2O3-B2O3 flux. In order to examine the effect of In<3+>, the mol% of (Fe2O3+In2O3) is made constant. Only the ratio of Fe2O3/In2O3 is changed. The film thickness is made to be about 30mum. Then, the performance index indicates 15deg/dB at In<3+>=0.3 atom/f.u.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17727187A JPS6421908A (en) | 1987-07-17 | 1987-07-17 | Material for magnetooptic element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17727187A JPS6421908A (en) | 1987-07-17 | 1987-07-17 | Material for magnetooptic element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6421908A true JPS6421908A (en) | 1989-01-25 |
Family
ID=16028137
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17727187A Pending JPS6421908A (en) | 1987-07-17 | 1987-07-17 | Material for magnetooptic element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6421908A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03200306A (en) * | 1989-12-27 | 1991-09-02 | Shin Etsu Chem Co Ltd | Bismuth-substituted oxide garnet single crystal and manufacture thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5615125A (en) * | 1979-07-18 | 1981-02-13 | Mitsubishi Electric Corp | Fuse redundancy circuit |
| JPS5672707A (en) * | 1979-11-20 | 1981-06-17 | Fuji Electric Co Ltd | Position controller |
| JPS5972707A (en) * | 1982-10-20 | 1984-04-24 | Hitachi Ltd | Garnet film for magnetic bubble element |
-
1987
- 1987-07-17 JP JP17727187A patent/JPS6421908A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5615125A (en) * | 1979-07-18 | 1981-02-13 | Mitsubishi Electric Corp | Fuse redundancy circuit |
| JPS5672707A (en) * | 1979-11-20 | 1981-06-17 | Fuji Electric Co Ltd | Position controller |
| JPS5972707A (en) * | 1982-10-20 | 1984-04-24 | Hitachi Ltd | Garnet film for magnetic bubble element |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03200306A (en) * | 1989-12-27 | 1991-09-02 | Shin Etsu Chem Co Ltd | Bismuth-substituted oxide garnet single crystal and manufacture thereof |
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