JPS6417299A - Semiconductor storage device - Google Patents

Semiconductor storage device

Info

Publication number
JPS6417299A
JPS6417299A JP62172159A JP17215987A JPS6417299A JP S6417299 A JPS6417299 A JP S6417299A JP 62172159 A JP62172159 A JP 62172159A JP 17215987 A JP17215987 A JP 17215987A JP S6417299 A JPS6417299 A JP S6417299A
Authority
JP
Japan
Prior art keywords
circuit
erasion
voltage
write
memory cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62172159A
Other languages
Japanese (ja)
Inventor
Katsutoshi Yokoyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC IC Microcomputer Systems Co Ltd
Original Assignee
NEC IC Microcomputer Systems Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC IC Microcomputer Systems Co Ltd filed Critical NEC IC Microcomputer Systems Co Ltd
Priority to JP62172159A priority Critical patent/JPS6417299A/en
Publication of JPS6417299A publication Critical patent/JPS6417299A/en
Pending legal-status Critical Current

Links

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To easily detect a memory cell which has become a failure, by a user, by providing a switching circuit for outputting one of an output voltage of a step-up circuit and an output voltage of a step-down circuit. CONSTITUTION:The titled device is constituted of a switching circuit 15 of a write/erasion voltage for inputting the VPP outputted from a step-up circuit 8, a write/erasion control circuit 16 for inputting the write/erasion voltage output from said circuit, and a memory cell 17. Also, a register 1 of the s witching circuit 15 stores a data related to what kind of voltage is supplied to the memory cell 17, and when this output is 'H', a holding failure of the data of the memory cell is tested, and at the time of 'L', usual write and erasion are executed. In such a way, by executing a write/erasion test by a lower voltage than a voltage at the time of usual write and erasion, a memory cell in which a holding failure of data has occurred can be detected easily in an early stage by a user side.
JP62172159A 1987-07-09 1987-07-09 Semiconductor storage device Pending JPS6417299A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62172159A JPS6417299A (en) 1987-07-09 1987-07-09 Semiconductor storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62172159A JPS6417299A (en) 1987-07-09 1987-07-09 Semiconductor storage device

Publications (1)

Publication Number Publication Date
JPS6417299A true JPS6417299A (en) 1989-01-20

Family

ID=15936665

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62172159A Pending JPS6417299A (en) 1987-07-09 1987-07-09 Semiconductor storage device

Country Status (1)

Country Link
JP (1) JPS6417299A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5991200A (en) * 1989-02-06 1999-11-23 Hitachi, Ltd. Nonvolatile semiconductor memory device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59227095A (en) * 1983-06-07 1984-12-20 Hitachi Ltd Screening method of semiconductor storage element
JPS60247899A (en) * 1984-05-22 1985-12-07 Nec Corp Nonvolatile semiconductor memory possible for electric write/erase

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59227095A (en) * 1983-06-07 1984-12-20 Hitachi Ltd Screening method of semiconductor storage element
JPS60247899A (en) * 1984-05-22 1985-12-07 Nec Corp Nonvolatile semiconductor memory possible for electric write/erase

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5991200A (en) * 1989-02-06 1999-11-23 Hitachi, Ltd. Nonvolatile semiconductor memory device
US6016273A (en) * 1989-02-06 2000-01-18 Hitachi, Ltd. Nonvolatile semiconductor memory device
US6157576A (en) * 1989-02-06 2000-12-05 Hitachi, Ltd. Nonvolatile semiconductor memory device
US6181600B1 (en) 1989-02-06 2001-01-30 Hitachi, Ltd Nonvolatile semiconductor memory device
US6259629B1 (en) 1989-02-06 2001-07-10 Hitachi, Ltd. Nonvolatile semiconductor memory device
US6438036B2 (en) 1989-02-06 2002-08-20 Hitachi, Ltd. Nonvolatile semiconductor memory device
US6747902B2 (en) 1989-02-06 2004-06-08 Renesas Technology Corp. Nonvolatile semiconductor memory apparatus
US6791882B2 (en) 1989-02-06 2004-09-14 Renesas Technology Corp. Nonvolatile semiconductor memory device
US7020028B2 (en) 1989-02-06 2006-03-28 Renesas Technology Corp. Nonvolatile semiconductor memory device
US7099199B2 (en) 1989-02-06 2006-08-29 Renesas Technology Corp. Nonvolatile semiconductor memory device

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