JPS6416632U - - Google Patents
Info
- Publication number
- JPS6416632U JPS6416632U JP11012687U JP11012687U JPS6416632U JP S6416632 U JPS6416632 U JP S6416632U JP 11012687 U JP11012687 U JP 11012687U JP 11012687 U JP11012687 U JP 11012687U JP S6416632 U JPS6416632 U JP S6416632U
- Authority
- JP
- Japan
- Prior art keywords
- discharge
- reaction tube
- discharge port
- ring
- phase growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001947 vapour-phase growth Methods 0.000 claims description 3
- 238000007599 discharging Methods 0.000 claims 2
- 239000012495 reaction gas Substances 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 235000012431 wafers Nutrition 0.000 claims 2
- 239000007789 gas Substances 0.000 claims 1
- 239000012071 phase Substances 0.000 claims 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Description
第１図は、本考案の実施例を示す断面図、第２
図は、従来の縦型減圧気相成長装置を示す断面図
である。
図中、１，１１……反応管、３，１３……ウエ
ハー、４，１４……ボート、６，１６……排出口
、１７……排出ガイド、１８……リング状排出溝
。
Fig. 1 is a sectional view showing an embodiment of the present invention;
The figure is a sectional view showing a conventional vertical reduced pressure vapor phase growth apparatus. In the figure, 1, 11... reaction tube, 3, 13... wafer, 4, 14... boat, 6, 16... discharge port, 17... discharge guide, 18... ring-shaped discharge groove.
Claims (1)
ートで実質的に水平に保持し、前記反応管の上部
から反応ガスを導入して、前記基板ウエハー上に
成長膜を形成させ、前記反応ガスを前記反応管下
端の排出口から排出させる縦型減圧気相成長装置
に於いて、排出口にリング状排出溝を形成したこ
とを特徴とする縦型減圧気相成長装置。 (2) 前記排出口に排出ガイドを、該排出ガイド
と前記反応管側壁とでリング状の排出溝を形成す
るように設け、前記リング状排出溝から前記排出
ガイド脚部の排出口を通つてガスを排出し得るよ
うにした実用新案登録請求の範囲第１項に記載の
縦型減圧気相成長装置。[Claims for Utility Model Registration] (1) A plurality of substrate wafers are held substantially horizontally in a vertical reaction tube by a boat, and a reaction gas is introduced from the upper part of the reaction tube to form a surface on the substrate wafers. A vertical vacuum vapor phase growth apparatus for forming a grown film and discharging the reaction gas from a discharge port at the lower end of the reaction tube, characterized in that a ring-shaped discharge groove is formed at the discharge port. Phase growth device. (2) A discharge guide is provided at the discharge port so that the discharge guide and the side wall of the reaction tube form a ring-shaped discharge groove, and a discharge guide is provided from the ring-shaped discharge groove through the discharge port of the discharge guide leg. A vertical reduced pressure vapor phase growth apparatus according to claim 1, which is a utility model and is capable of discharging gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11012687U JPS6416632U (en) | 1987-07-20 | 1987-07-20 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11012687U JPS6416632U (en) | 1987-07-20 | 1987-07-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6416632U true JPS6416632U (en) | 1989-01-27 |
Family
ID=31347000
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11012687U Pending JPS6416632U (en) | 1987-07-20 | 1987-07-20 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6416632U (en) |
-
1987
- 1987-07-20 JP JP11012687U patent/JPS6416632U/ja active Pending
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