JPS6414848A - Gas phase ion source - Google Patents

Gas phase ion source

Info

Publication number
JPS6414848A
JPS6414848A JP62170428A JP17042887A JPS6414848A JP S6414848 A JPS6414848 A JP S6414848A JP 62170428 A JP62170428 A JP 62170428A JP 17042887 A JP17042887 A JP 17042887A JP S6414848 A JPS6414848 A JP S6414848A
Authority
JP
Japan
Prior art keywords
emitter
electrode
ion source
tank
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62170428A
Other languages
Japanese (ja)
Inventor
Haruo Kasahara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jeol Ltd
Original Assignee
Jeol Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jeol Ltd filed Critical Jeol Ltd
Priority to JP62170428A priority Critical patent/JPS6414848A/en
Publication of JPS6414848A publication Critical patent/JPS6414848A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0802—Field ionization sources
    • H01J2237/0807—Gas field ion sources [GFIS]

Landscapes

  • Electron Sources, Ion Sources (AREA)

Abstract

PURPOSE:To prevent the inflow of heat to a cooled part and improve the adsorption efficiency of a gas to an emitter by providing an electrically insulated cylindrical electrode supporter of high thermal conductivity having a pullout electrode at the lower end thereof, positioning the electrode supporter in such a way as to surround the emitter and the like and fixed as thermally shielded condition in a vacuum vessel, and further cooling the cooled part. CONSTITUTION:The introduction of liquid nitrogen into a tank 16 via a feed pipe 18 maintains the tank 16, an electrode supporter 15 and a pullout electrode 9 respectively at the temperature level of liquid nitrogen, thereby shielding thermally a tank 2, a sapphire 6, a holder 7 and an emitter 8 from an ion source outside wall 1 at an room temperature. The effect of radiation heat from the ion source outside wall 1, therefore, can be prevented and the consumption of liquid helium can be reduced. On the other hand, the pullout electrode 9 is employed as a thermal shield member and consequently kept at a temperature higher than the temperature of the emitter 8, thereby enabling the improvement of the adsorption efficiency of a helium gas to the emitter 8.
JP62170428A 1987-07-08 1987-07-08 Gas phase ion source Pending JPS6414848A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62170428A JPS6414848A (en) 1987-07-08 1987-07-08 Gas phase ion source

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62170428A JPS6414848A (en) 1987-07-08 1987-07-08 Gas phase ion source

Publications (1)

Publication Number Publication Date
JPS6414848A true JPS6414848A (en) 1989-01-19

Family

ID=15904733

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62170428A Pending JPS6414848A (en) 1987-07-08 1987-07-08 Gas phase ion source

Country Status (1)

Country Link
JP (1) JPS6414848A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009147894A1 (en) * 2008-06-05 2009-12-10 株式会社日立ハイテクノロジーズ Ion beam device
WO2010008924A3 (en) * 2008-07-16 2010-04-22 Carl Zeiss Smt Inc. Increasing current in charged particle sources and systems

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009147894A1 (en) * 2008-06-05 2009-12-10 株式会社日立ハイテクノロジーズ Ion beam device
JP5097823B2 (en) * 2008-06-05 2012-12-12 株式会社日立ハイテクノロジーズ Ion beam equipment
US8779380B2 (en) 2008-06-05 2014-07-15 Hitachi High-Technologies Corporation Ion beam device
US9508521B2 (en) 2008-06-05 2016-11-29 Hitachi High-Technologies Corporation Ion beam device
WO2010008924A3 (en) * 2008-07-16 2010-04-22 Carl Zeiss Smt Inc. Increasing current in charged particle sources and systems
JP2011528489A (en) * 2008-07-16 2011-11-17 カール ツァイス エヌティーエス エルエルシー Current increase in charged particle sources and systems.
US8124941B2 (en) 2008-07-16 2012-02-28 Carl Zeiss Nts, Llc Increasing current in charged particle sources and systems

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