JPS6413119U - - Google Patents

Info

Publication number
JPS6413119U
JPS6413119U JP10788587U JP10788587U JPS6413119U JP S6413119 U JPS6413119 U JP S6413119U JP 10788587 U JP10788587 U JP 10788587U JP 10788587 U JP10788587 U JP 10788587U JP S6413119 U JPS6413119 U JP S6413119U
Authority
JP
Japan
Prior art keywords
electrode
electrodes
plasma cvd
substrate
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10788587U
Other languages
English (en)
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP10788587U priority Critical patent/JPS6413119U/ja
Publication of JPS6413119U publication Critical patent/JPS6413119U/ja
Pending legal-status Critical Current

Links

JP10788587U 1987-07-14 1987-07-14 Pending JPS6413119U (US20100056889A1-20100304-C00004.png)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10788587U JPS6413119U (US20100056889A1-20100304-C00004.png) 1987-07-14 1987-07-14

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10788587U JPS6413119U (US20100056889A1-20100304-C00004.png) 1987-07-14 1987-07-14

Publications (1)

Publication Number Publication Date
JPS6413119U true JPS6413119U (US20100056889A1-20100304-C00004.png) 1989-01-24

Family

ID=31342704

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10788587U Pending JPS6413119U (US20100056889A1-20100304-C00004.png) 1987-07-14 1987-07-14

Country Status (1)

Country Link
JP (1) JPS6413119U (US20100056889A1-20100304-C00004.png)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09312268A (ja) * 1996-05-23 1997-12-02 Sharp Corp プラズマ励起化学蒸着装置及びプラズマエッチング装置
KR100687530B1 (ko) * 1999-03-18 2007-02-27 에이에스엠 저펜 가부시기가이샤 플라즈마 cvd 막 형성장치
WO2008078508A1 (ja) * 2006-12-26 2008-07-03 Kyocera Corporation プラズマ発生体及び反応装置
JP2013044017A (ja) * 2011-08-24 2013-03-04 Fujifilm Corp 成膜装置
KR101339003B1 (ko) * 2013-05-22 2013-12-10 플라텍(주) 반도체웨이퍼 배선막 도금설비용 애노드

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09312268A (ja) * 1996-05-23 1997-12-02 Sharp Corp プラズマ励起化学蒸着装置及びプラズマエッチング装置
KR100687530B1 (ko) * 1999-03-18 2007-02-27 에이에스엠 저펜 가부시기가이샤 플라즈마 cvd 막 형성장치
WO2008078508A1 (ja) * 2006-12-26 2008-07-03 Kyocera Corporation プラズマ発生体及び反応装置
JP5053292B2 (ja) * 2006-12-26 2012-10-17 京セラ株式会社 プラズマ発生体及び反応装置
JP2013044017A (ja) * 2011-08-24 2013-03-04 Fujifilm Corp 成膜装置
KR101339003B1 (ko) * 2013-05-22 2013-12-10 플라텍(주) 반도체웨이퍼 배선막 도금설비용 애노드

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