JPS6396919A - Apparatus for plasma processing - Google Patents

Apparatus for plasma processing

Info

Publication number
JPS6396919A
JPS6396919A JP24365586A JP24365586A JPS6396919A JP S6396919 A JPS6396919 A JP S6396919A JP 24365586 A JP24365586 A JP 24365586A JP 24365586 A JP24365586 A JP 24365586A JP S6396919 A JPS6396919 A JP S6396919A
Authority
JP
Japan
Prior art keywords
processing container
opening
opened
closing
plasma processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24365586A
Other languages
Japanese (ja)
Inventor
Yasuo Sato
康男 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
PLASMA SYST KK
Original Assignee
PLASMA SYST KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by PLASMA SYST KK filed Critical PLASMA SYST KK
Priority to JP24365586A priority Critical patent/JPS6396919A/en
Publication of JPS6396919A publication Critical patent/JPS6396919A/en
Pending legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To shorten the cleaning time and to improve the quality of a device by a method wherein both open ends, which are located face to face with each other at a processing container of an apparatus for plasma processing, can be opened and closed and a cleaning operation to remove a product which is generated during a process and is deposited can be executed easily by opening and closing the front and rear lids with a view to preventing the damage of the processing container. CONSTITUTION:The front and rear ends which are located face to face with each other at a cylindrical horizontal-type plasma processing container 10 are constructed in such a way that they can be opened, and projected collars 11, 11' of a larger diameter are installed at the edges of the open ends. In addition, the front and rear ends are opened and closed by the front and rear lids 12, 12' which are installed at the front and rear parts of the processing container 10. An L-shaped latches 15 for opening and closing the lid are connected to the front opening/closing lid 12 via a connecting piece 14. In addition, a support plate 16 is connected to the other opening/closing lid 12' via a connecting piece 14', and this support plate 16 is installed at an appropriate place at the upper and lower ends of a mounting piece 17. Because both open ends can be opened and closed by the opening/closing lids 12, 12', it becomes easy to clean a product which is generated and adheres to the container, and it is possible to prevent the damage of the processing container 10.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、プラズマ処理容器内を排気し真空にすると共
に、該プラズマ処理容器内に反応ガスを導入し、該反応
ガスをプラズマ放電させて被処理基板をプラズマ処理す
るプラズマ処理装置に関するものである。
[Detailed Description of the Invention] [Industrial Application Field] The present invention involves evacuating the inside of a plasma processing container to create a vacuum, introducing a reaction gas into the plasma processing container, and causing the reaction gas to become a plasma discharge. The present invention relates to a plasma processing apparatus that performs plasma processing on a substrate to be processed.

〔従来の技術〕[Conventional technology]

集積回路等の半導体製造技術においては、回路パターン
の微細化が進行したため、従来のウェット処理からドラ
イ処理へと移行している。
2. Description of the Related Art In semiconductor manufacturing technology for integrated circuits and the like, as circuit patterns become finer, there is a shift from conventional wet processing to dry processing.

この中で、処理容器内を真空に排気した後、該処理容器
内へ反応ガスを導入し、電極間にプラズマ放電を起させ
、この放電により励起された反応ガスによって被処理基
板を処理するプラズマ処理装置が主流となっており、中
でも、多数枚を同時に処理する円筒型処理容器を使用す
るバッチ処理方式はスループットが高いことで多用され
ている。
In this process, after the inside of the processing container is evacuated, a reaction gas is introduced into the processing container, a plasma discharge is caused between the electrodes, and the substrate to be processed is processed using the reaction gas excited by this discharge. Processing apparatuses are the mainstream, and among them, batch processing systems that use cylindrical processing containers that process a large number of sheets at the same time are frequently used because of their high throughput.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

この円筒型処理容器は、アッシング(ホトレジスト等の
灰化)、エツチング、CV’Dの処理に使用される。こ
のため、被処理基板であるウェハーの処理中に発生する
各種の反応生物質が処理容器の内周壁面に付着する。
This cylindrical processing container is used for ashing (ashing of photoresist, etc.), etching, and CV'D processing. Therefore, various reactive substances generated during processing of a wafer, which is a substrate to be processed, adhere to the inner peripheral wall surface of the processing container.

この付着物はウェハー処理中に再び処理容器内に拡散し
、ウェハーを汚染し、デバイスの歩留りを悪化させると
いう重大な問題を惹起する。
This deposit re-diffuses into the processing container during wafer processing, contaminates the wafer, and causes a serious problem of deteriorating the yield of devices.

この対策として現状では、早ければ毎日、長くとも数週
間毎に処理容器内を十分に清掃しなければならなかった
As a countermeasure to this problem, it is currently necessary to thoroughly clean the inside of the processing container every day at the earliest, or every few weeks at the most.

ところが、この清掃作業は、これら装置の使用環境、つ
まりクリーンルーム内であること、また手の入りにくい
構造の装置が多いため手間のかかる作業であった。
However, this cleaning work is time-consuming because these devices are used in a clean room, and many of the devices have structures that are difficult to access.

特に奥行の長い処理容器を十分に清掃することはきわめ
て困難で、このため付着物が十分に除去できず、デバイ
スの歩留りを向上させる上での問題点となっていた。
In particular, it is extremely difficult to sufficiently clean a processing container having a long depth, and as a result, deposits cannot be sufficiently removed, which has been a problem in improving the yield of devices.

また、清掃に時間がかかるため生産性の低下をまねく要
因ともなっていた。
Additionally, cleaning takes time, which is a factor in reducing productivity.

本発明は、このような従来の問題点に鑑みなされたもの
で、その目的とするところは、円筒型処理容器内を短時
間で、容易に、かつ十分に清掃できて、デバイスの歩留
り向上を図ることができるプラズマ処理装置を提供する
ことにある。
The present invention has been made in view of these conventional problems, and its purpose is to improve the yield of devices by making it possible to clean the inside of a cylindrical processing container easily and thoroughly in a short time. An object of the present invention is to provide a plasma processing apparatus that can achieve the following objectives.

〔問題点を解決するための手段〕[Means for solving problems]

この目的を達成するため1本発明は、円筒型プラズマ処
理装置において、被処理基板のプラズマ処理容器の相対
向せる両開口面が開閉可能となっている構成を特徴とす
るものである。
To achieve this object, one aspect of the present invention is a cylindrical plasma processing apparatus characterized by a configuration in which both opposing opening surfaces of a plasma processing chamber for a substrate to be processed can be opened and closed.

〔実施例〕〔Example〕

本発明装置は、横型プラズマ処理容器を有する装置の外
、縦型プラズマ処理容器を有する装置をも含むことは勿
論である。
It goes without saying that the apparatus of the present invention includes not only an apparatus having a horizontal plasma processing container but also an apparatus having a vertical plasma processing container.

以下、横型円筒プラズマ処理容器を有する本発明装置の
実施例を図面に基づいて説明する。
Embodiments of the present invention apparatus having a horizontal cylindrical plasma processing vessel will be described below with reference to the drawings.

第1図は本発明に係るプラズマ処理装置の一例での平面
からの概略構成図、第2図は一部を断面した側面からの
概略構成図で、図中10は対向せる前後両面が開口した
円筒横型プラズマ処理容器(以下、処理容器という)で
、その前後の開口縁部にはやや大径のつば状体11.1
1’が一体的に突設されている。
Fig. 1 is a schematic configuration diagram from a plane view of an example of a plasma processing apparatus according to the present invention, and Fig. 2 is a schematic configuration diagram from a partially sectional side view. A cylindrical horizontal plasma processing vessel (hereinafter referred to as the processing vessel), with a slightly large diameter brim-like body 11.1 at the front and rear opening edges.
1' is integrally provided in a protruding manner.

12.12′は処理容器10の前後開口部を開閉する前
後蓋で、つば状体11.11’の凹部に設けられた0リ
ング13.13′によってシールされ処理容器10内の
真空が保持されるようになっている。      1 前面蓋12は連結部材14を介して略り層板状の蓋開閉
ラック15と連結され、該ラック15が処理容器10の
軸方向外側に設けられた通路に沿い、第1図および第2
図に数字100で示す実線矢印方向に往復動することに
よって処理容器の前面開口部を前面蓋12により開閉す
るようになっている。
Reference numeral 12.12' denotes front and rear lids that open and close the front and rear openings of the processing container 10, and are sealed by an O-ring 13.13' provided in the recess of the collar-like body 11.11' to maintain the vacuum inside the processing container 10. It has become so. 1. The front lid 12 is connected to a generally laminated lid opening/closing rack 15 via a connecting member 14, and the rack 15 is connected along a passage provided on the axially outer side of the processing container 10, as shown in FIGS.
The front opening of the processing container is opened and closed by the front lid 12 by reciprocating in the direction of the solid arrow indicated by the number 100 in the figure.

一方、前面蓋12と対向する後面蓋12’は連結部材1
4′を介して支持板16と連結されると共に、該支持体
16にはヒンジ取着部材17が連結されて該取着部材1
7はその上下端が背体19の適所においてヒンジ18を
介して枢着され、該ヒンジ18を支点にして、第1図に
数字200で示す実線矢印方向に回動し、処理容器10
の後面開口部を後面蓋12′により開閉するようになっ
ている。
On the other hand, the rear lid 12' facing the front lid 12 is connected to the connecting member 1.
4', and a hinge attachment member 17 is connected to the support body 16 so that the attachment member 1
7 has its upper and lower ends pivoted at appropriate positions on the back body 19 via a hinge 18, and pivots about the hinge 18 in the direction of the solid arrow shown by the numeral 200 in FIG.
The rear opening is opened and closed by a rear lid 12'.

なお、該後面蓋12′による処理容器10の後面開口部
の開閉は、前面蓋12と同様に開閉ラックを介してのス
ライド方式であってもよく、また、特に図示しないが、
前後両差12.12′共に上下(垂直)スライド方式等
であってもよい。
Note that the rear opening of the processing container 10 may be opened and closed by the rear lid 12' in a sliding manner via an opening/closing rack similarly to the front lid 12, and although not particularly shown,
Both the front and rear differences 12 and 12' may be of a vertical (vertical) sliding type.

いずれにしても、処理容器10の対向せる前後開口部を
蓋12.12′により開閉できる構造であればよい。
In any case, any structure may be used as long as the opposing front and rear openings of the processing container 10 can be opened and closed by the lids 12 and 12'.

20は反応ガス導入管、21は真空排気管、22.23
は処理容器10の外周に配設の電極を示す。
20 is a reaction gas introduction pipe, 21 is a vacuum exhaust pipe, 22.23
1 shows electrodes arranged around the outer periphery of the processing container 10.

以上の構成において、被処理基板であるウェハー24を
立てて並べたウェハーボート25を処理容器10内に定
置し、両面蓋12.12′により処理容器10を密閉し
、該容器10内を真空排気管21により真空に排気した
後、所定量の反応ガスをガス導入管20より導入して処
理容器10内を所定のガス圧とし、電極22.23に高
周波電源(図示しない)より高周波電力を印加し、処理
容器10内にプラズマ放電を起させ、該放電により励起
された反応ガスによってウェハー24を処理するもので
ある。ところで、このプラズマ処理工程においては、そ
の発生する生成物が処理容器10の内周壁に付着するが
、この付着した生成物を除去するための処理容器10内
の清掃は、前面蓋12を開閉ラック15の動作を介して
開蓋すると共に、後面蓋12′もヒンジ18を支点とし
ての回動を介して開蓋し、処理容器10の前後両面を開
口させて両側から清掃作業を行う。
In the above configuration, the wafer boat 25 in which wafers 24, which are substrates to be processed, are arranged vertically is placed in the processing container 10, the processing container 10 is sealed with the double-sided lid 12, 12', and the inside of the container 10 is evacuated. After evacuation through the tube 21, a predetermined amount of reaction gas is introduced through the gas introduction tube 20 to bring the inside of the processing container 10 to a predetermined gas pressure, and high-frequency power is applied to the electrodes 22, 23 from a high-frequency power source (not shown). Then, a plasma discharge is caused in the processing container 10, and the wafer 24 is processed by the reactive gas excited by the discharge. By the way, in this plasma processing step, the generated products adhere to the inner circumferential wall of the processing container 10, and the inside of the processing container 10 is cleaned to remove the adhered products by opening and closing the front lid 12. 15, the rear lid 12' is also opened by rotating about the hinge 18, and both the front and rear sides of the processing container 10 are opened, and the cleaning operation is performed from both sides.

この場合、処理容器10は両側が開口し筒抜となってい
るため、強く押しても、勢いあまって石英ガラスの処理
容器を破損する危険はなく、また、両側から手が届くの
で、簡易にして、十分なる清掃が行えると共に、処理容
器10は筒抜は状態にして隅部がなくなるので、清掃を
簡易に、かつ十分に行うことができるものである。
In this case, since the processing container 10 is open on both sides and has a cylindrical shape, there is no risk of damaging the quartz glass processing container even if it is pushed hard, and since it can be reached from both sides, it is easy to use. In addition to being able to perform sufficient cleaning, the processing container 10 can be removed from the tube and have no corners, so cleaning can be performed easily and thoroughly.

〔発明の効果〕〔Effect of the invention〕

しかして、本発明によれば、被処理基板のプラズマ処理
容器の相対向せる両開口面が開閉可能となっているから
、処理工程中に発生し、付着した生成物の除去等のため
行う処理容器内の清掃は、前後の蓋を開け、処理容器内
を筒抜は状態となして行えばよいから、処理容器を損傷
等することなく安全に、短時間で、容易に、かつ十分に
清掃できて、デバイスの製造歩留りや品質の向上に対し
てきわめて有効である。
According to the present invention, both opening surfaces of the plasma processing vessel for the substrate to be processed can be opened and closed. The inside of the container can be cleaned by opening the front and rear lids and removing the inside of the processing container, so cleaning can be done safely, quickly, easily, and thoroughly without damaging the processing container. This is extremely effective in improving device manufacturing yield and quality.

【図面の簡単な説明】[Brief explanation of the drawing]

図面は本発明の一実施例を示すもので、第1図は平面か
らの概略構成図、第2図は一部を断面した側面からの概
略構成図である。 10・・・プラズマ処理容器 12.12’  ・・・開閉蓋
The drawings show one embodiment of the present invention, and FIG. 1 is a schematic diagram of the configuration seen from the top, and FIG. 2 is a schematic diagram of the configuration seen from the side with a portion cut away. 10... Plasma processing container 12.12'... Opening/closing lid

Claims (1)

【特許請求の範囲】[Claims] 1、円筒型プラズマ処理装置において、被処理基板のプ
ラズマ処理容器の相対向せる両開口面が開閉可能となっ
ている構成を特徴とするプラズマ処理装置。
1. A cylindrical plasma processing apparatus characterized by a configuration in which both opposing opening surfaces of a plasma processing container for a substrate to be processed can be opened and closed.
JP24365586A 1986-10-14 1986-10-14 Apparatus for plasma processing Pending JPS6396919A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24365586A JPS6396919A (en) 1986-10-14 1986-10-14 Apparatus for plasma processing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24365586A JPS6396919A (en) 1986-10-14 1986-10-14 Apparatus for plasma processing

Publications (1)

Publication Number Publication Date
JPS6396919A true JPS6396919A (en) 1988-04-27

Family

ID=17107042

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24365586A Pending JPS6396919A (en) 1986-10-14 1986-10-14 Apparatus for plasma processing

Country Status (1)

Country Link
JP (1) JPS6396919A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5171069A (en) * 1974-12-16 1976-06-19 Tokyo Ohka Kogyo Co Ltd KAIRYOPURAZUMARIAKUTAA
JPS5696837A (en) * 1979-12-29 1981-08-05 Fujitsu Ltd Dry etching device
JPS6053013A (en) * 1983-09-02 1985-03-26 Hitachi Ltd Thin film forming equipment

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5171069A (en) * 1974-12-16 1976-06-19 Tokyo Ohka Kogyo Co Ltd KAIRYOPURAZUMARIAKUTAA
JPS5696837A (en) * 1979-12-29 1981-08-05 Fujitsu Ltd Dry etching device
JPS6053013A (en) * 1983-09-02 1985-03-26 Hitachi Ltd Thin film forming equipment

Similar Documents

Publication Publication Date Title
JP3122617B2 (en) Plasma processing equipment
JPH06244123A (en) Single substrate type vacuum-processing equipment with improved exhaust system
KR950003894B1 (en) Thin film deposition method and apparatus
JP3012328B2 (en) Method and apparatus for protecting a substrate in a pressure sealed chamber from contaminants in a gas
JPH05175162A (en) Dry etching system
JP3254482B2 (en) Plasma processing apparatus and cleaning method thereof
JPS6396919A (en) Apparatus for plasma processing
JPH04186619A (en) Manufacture of semiconductor
JPH09129596A (en) Cleaning method for reaction chamber
JPS60249329A (en) Spatter etching mechanism in vacuum treatment unit
KR100501618B1 (en) Plasma processing apparatus and shield ring
JPS631035A (en) Method and apparatus for reduced pressure processing
JP2626782B2 (en) Vacuum processing equipment
JP2000223440A (en) Sputtering apparatus and substrate processing apparatus
JPH08148436A (en) Plasma treatment method and plasma apparatus
JPH05230673A (en) Dry etching device
JP2002075882A (en) Substrate treatment device, load lock chamber for the same, and cleaning method of load lock chamber in substrate treatment device
JPS5821333A (en) Sample holder of ionbeam etching device
JP2002261086A (en) Plasma treatment device
JPH082649Y2 (en) LCD manufacturing equipment
JPH08232086A (en) Ecr etching device
JPH10242122A (en) Device and method for dry etching
JPH0697117A (en) Dry etching system
JP2538930B2 (en) Vacuum processing equipment
JPH05144740A (en) Vacuum treatment apparatus