JPS6396544A - Surface analysis - Google Patents
Surface analysisInfo
- Publication number
- JPS6396544A JPS6396544A JP61242485A JP24248586A JPS6396544A JP S6396544 A JPS6396544 A JP S6396544A JP 61242485 A JP61242485 A JP 61242485A JP 24248586 A JP24248586 A JP 24248586A JP S6396544 A JPS6396544 A JP S6396544A
- Authority
- JP
- Japan
- Prior art keywords
- ray
- incident
- signal
- sample
- intensity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005211 surface analysis Methods 0.000 title claims abstract description 10
- 238000000034 method Methods 0.000 claims description 7
- 238000005259 measurement Methods 0.000 claims description 6
- 238000001514 detection method Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
Landscapes
- Analysing Materials By The Use Of Radiation (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明はＸ線を用いて表面観察９分析やＬＳＩのテスト
などを行う場合の表面解析方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a surface analysis method when performing surface observation9 analysis, LSI testing, etc. using X-rays.
従来の技術
従来、表面解析の精度を向上させるための試料への入射
Ｘ線強度の安定化は、Ｘ線源の電源の安定化により行わ
れている。又、従来、簡便で小型の光電型Ｘ線検出器が
実用されている（例えば、Ｒ，Ｌ、パール及びＪ、Ｅ、
ヒユーストン、「サーフイスサイｘ ｙ スＪ （Ｒ，
Ｌ、Ｐａｒｌ ａｎｄ Ｊ、ＬＨｏｕｓｔｏｎ 。BACKGROUND OF THE INVENTION Conventionally, stabilization of the intensity of X-rays incident on a sample in order to improve the accuracy of surface analysis has been carried out by stabilizing the power supply of the X-ray source. Furthermore, conventionally, simple and compact photoelectric X-ray detectors have been put into practical use (for example, R, L, Pearl, J, E,
Hyuston, “Surf Issai x y Su J (R,
L, Parl and J, LHouston.
” ５ｕｒｆａｃｅ ５ｃｉａｎｃｅ ” ）第２６巻
、１９７１年Ｐ６６７）。"5surface 5ciance" Volume 26, 1971 P667).
発明が解決しようとする問題点
Ｘ線源の電源の安定化は、Ｘ線源に高電圧大電流を用い
ているので複雑で高価な装置を必要とする。さらにこの
方法では対陰極の形状変形などによるＸ線源の特性の経
時変化による出力Ｘ線強度の変化は補償できない。本発
明はかかる点に鑑みてなされたものである。Problems to be Solved by the Invention Stabilizing the power supply of the X-ray source requires complicated and expensive equipment because the X-ray source uses high voltage and large current. Furthermore, this method cannot compensate for changes in the output X-ray intensity due to changes over time in the characteristics of the X-ray source due to deformation of the anticathode shape or the like. The present invention has been made in view of this point.
問題点を解決するための手段
本発明の方法は、Ｘ線を用いた表面解析装置の入射Ｘ線
強度に比例する強度を測定しうる、試料に近い適切な場
所に、Ｘ線検出器を設置し、この検出器に照射する時々
刻々のＸ線強度を測定し、この値で表面解析装置の検出
信号値をリアルタイムで規格化するものである。Means for Solving the Problems The method of the present invention involves installing an X-ray detector at an appropriate location near the sample where it can measure an intensity proportional to the incident X-ray intensity of a surface analysis device using X-rays. The X-ray intensity irradiated to this detector is measured moment by moment, and the detection signal value of the surface analysis device is normalized in real time using this value.
作用
試料に近い場所で入射Ｘ線強度に比例するＸ線強度を測
定する事により、試料に実際入射しているＸ線強度を時
々刻々監視することができ、この値で検出信号値をリア
ルタイムで割り算するなどの信号処理により、当該検出
信号を入射Ｘ線強度に対し規格化し、信号対雑音比を向
上させることができる。By measuring the X-ray intensity that is proportional to the incident X-ray intensity at a location close to the working sample, the actual X-ray intensity that is actually incident on the sample can be monitored moment by moment, and the detected signal value can be measured in real time using this value. By signal processing such as division, the detection signal can be normalized to the incident X-ray intensity and the signal-to-noise ratio can be improved.
実施例
第１図はＸ線光電子分光装置に適用した本発明の一実施
例を示す。環境室７においてＸ線源用電源と日本真空社
製Ｘ線源１を用いて１０ｋＶＸ２０ｍ人のパワーでＸ線
３を発生し、半導体ウェハー等の試料２に入射するＸ線
の一部を、試料近傍に設置したＰａｒｋ型光電型光線式
Ｘ線検出器４電源１ｏにより約０．２μ人の光電流とし
て検出し、当該検出値工ｘ、ｌ！−電子エネルギー分析
器６とその電源９より出力される光電子信号強度工ｐ
を演算器６に入力し、割り算の商工ＶＩｘを出力として
取り出す。Embodiment FIG. 1 shows an embodiment of the present invention applied to an X-ray photoelectron spectrometer. In the environmental chamber 7, an X-ray source power supply and an X-ray source 1 made by Nippon Shinku Co., Ltd. are used to generate X-rays 3 with a power of 10 kV x 20 m, and part of the X-rays incident on a sample 2 such as a semiconductor wafer is transferred to the sample 2. A Park-type photoelectric beam type X-ray detector installed nearby (4 power supplies 1o) detects a photocurrent of approximately 0.2μ, and the detected value x, l! - Photoelectronic signal intensity output from the electron energy analyzer 6 and its power supply 9
is input to the arithmetic unit 6, and the division value VIx is taken out as an output.
第２図ａ、ｂ及びＣは、それぞれＩｘ、 Ｉｐ、 Ｉｐ
／工ｘの測定例を模式的に示す。第２図において、縦軸
はそれぞれの強度を、横軸は測定時間を示し、第２図す
、ｃばそれぞれ工ｘの補正前後のＸ線光電子スペクトル
である。第２図から分かるようにＩｐに含まれる入射Ｘ
線強度の変動による雑音は工ｐ ／ 工ｚ では除かれ
ている。Figure 2 a, b, and C are Ix, Ip, and Ip, respectively.
An example of measurement of /f x is schematically shown. In FIG. 2, the vertical axis represents the respective intensities, the horizontal axis represents the measurement time, and in FIG. As can be seen from Figure 2, the incident X included in Ip
Noise due to variations in line strength is removed in p/z.
尚、第１図に示した試料電流を測る電流計１１で測定さ
れる電流値Ｉｓを工ｘの代わりに用いてＩｐ／ Ｉｓ
を出力としても効果がある。In addition, using the current value Is measured by the ammeter 11 that measures the sample current shown in FIG. 1 instead of x, Ip/Is
It is also effective to output .
尚、Ｘ線を単色化して用いる装置においては、Ｘ線検出
器を用いて単色化する前のＸ線を検出する方法も効果が
ある。又、Ｘ線検出器に代わるものとして、試料の近傍
の電気的に絶縁された金属′電極を用いて、当該電啄か
ら放出される光電子電流を第１図の実施列の工ｘとして
用いることも出来る。In addition, in an apparatus that uses X-rays after monochromating them, it is also effective to use an X-ray detector to detect the X-rays before monochromating them. Alternatively, as an alternative to the X-ray detector, an electrically insulated metal electrode near the sample can be used, and the photoelectron current emitted from the electric current can be used as the element x in the implementation column in Figure 1. You can also do it.
発明の効果
本発明によれば、入射Ｘ線強度が信号強度に直接反映さ
れる表面解析装置において、試料の近くで入射Ｘ線強度
を監視する事ができるので、Ｘ線源の特性の変動による
雑音を除去し測定の精度を向上させることができる。本
方法は比較的簡単なものであるから多くの装置に適用が
可能である。Effects of the Invention According to the present invention, in a surface analysis device in which the incident X-ray intensity is directly reflected in the signal intensity, it is possible to monitor the incident X-ray intensity near the sample. It is possible to remove noise and improve measurement accuracy. Since this method is relatively simple, it can be applied to many devices.
第１図は本発明の一実施例方法を説明するためのＸ線光
電子分光装置の構成図、第２図は同方法による測定結果
を示す特性図である。
１・・・・・・Ｘ線源、２・・・・・・試料、３・・・
・・・Ｘ線、４・・・・・・光電式Ｘ線検出器、６・・
・・・・電子エネルギー分析器、６・・・・・・演算器
、７・・・・・・環境室、８・・・・・・Ｘ線源電源、
９・・・・・・エネルギー分析器電源、１ｏ・・・・・
・Ｘ線検出器電源、１１・・・・・・電流計。FIG. 1 is a block diagram of an X-ray photoelectron spectrometer for explaining a method according to an embodiment of the present invention, and FIG. 2 is a characteristic diagram showing measurement results by the same method. 1...X-ray source, 2...sample, 3...
...X-ray, 4...Photoelectric X-ray detector, 6...
...Electron energy analyzer, 6...Arithmetic unit, 7...Environmental chamber, 8...X-ray source power supply,
9...Energy analyzer power supply, 1o...
・X-ray detector power supply, 11...Ammeter.
Claims (1)
条件でＸ線を検出できる場所にＸ線検出器を設置し、上
記検出器を用いて入射Ｘ線強度に比例するＸ線を測定し
、この測定により得られたＸ線検出値で上記表面解析装
置の信号を規格化し、上記信号への入射Ｘ線強度の変動
の影響を相殺する事により信号測定の信号対雑音比を向
上させるようにしてなる表面解析方法。An X-ray detector is installed near the sample of the surface analysis device using X-rays in a place where X-rays can be detected under the same conditions as the sample, and the detector is used to emit X-rays proportional to the incident X-ray intensity. The signal of the surface analysis device is normalized using the X-ray detection value obtained from this measurement, and the signal-to-noise ratio of the signal measurement is improved by canceling out the influence of fluctuations in the incident X-ray intensity on the signal. A surface analysis method that allows
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61242485A JPS6396544A (en) | 1986-10-13 | 1986-10-13 | Surface analysis |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61242485A JPS6396544A (en) | 1986-10-13 | 1986-10-13 | Surface analysis |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6396544A true JPS6396544A (en) | 1988-04-27 |
Family
ID=17089784
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61242485A Pending JPS6396544A (en) | 1986-10-13 | 1986-10-13 | Surface analysis |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6396544A (en) |
-
1986
- 1986-10-13 JP JP61242485A patent/JPS6396544A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| RU94028284A (en) | Method for photon scanning tunnel microscopy and photon scanning tunnel microscope | |
| CA1220559A (en) | Noncontact dynamic tester for integrated circuits | |
| JPH043952A (en) | Method and apparatus for surface analysis | |
| JPS6396544A (en) | Surface analysis | |
| Schechter et al. | Quantitative laser mass analysis by time resolution of the ion-induced voltage in multiphoton ionization processes | |
| JPS5853504B2 (en) | Test methods for integrated circuit devices | |
| JP2763907B2 (en) | Breakdown spectroscopic analysis method and apparatus | |
| KR950012289B1 (en) | Center beam measuriang device for ion paraday system | |
| JPS60262005A (en) | Measurement of film thickness | |
| Bloomer et al. | An experimental evaluation of monochromatic x-ray beam position monitors at diamond light source | |
| JPS62298125A (en) | Surface analysis | |
| JP2685722B2 (en) | X-ray analysis method | |
| JPS6251224A (en) | Ultraviolet ray cleaning monitoring | |
| US3546577A (en) | Apparatus for nondestructively measuring the position and particle-density profile of an accelerator beam | |
| Van Raan et al. | An experimental study of the response of a venetian blind type photomultiplier | |
| JPS585671A (en) | Measuring device for voltage | |
| JPS62196845A (en) | Detection of quantity of surface work affected layer of semiconductor substrate | |
| JPS63292555A (en) | Electron beam apparatus | |
| JPH07104301B2 (en) | X-ray photoelectron analyzer | |
| JPS62226550A (en) | Ion exciting auger electron spectroscope | |
| Yost et al. | A quality monitor and monitoring technique employing optically stimulated electron emission | |
| JPS59218981A (en) | Charge pulser | |
| JPS6398550A (en) | Exafs apparatus of soft x-ray region | |
| JPS62229748A (en) | Auger electron spectrograph | |
| JP2001174422A (en) | X-ray analyzer |