JPS639113A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS639113A JPS639113A JP15310886A JP15310886A JPS639113A JP S639113 A JPS639113 A JP S639113A JP 15310886 A JP15310886 A JP 15310886A JP 15310886 A JP15310886 A JP 15310886A JP S639113 A JPS639113 A JP S639113A
- Authority
- JP
- Japan
- Prior art keywords
- raw material
- chamber
- crucible
- semiconductor device
- ultra
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 20
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000002994 raw material Substances 0.000 claims abstract description 55
- 239000007789 gas Substances 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 14
- 239000013078 crystal Substances 0.000 claims abstract description 13
- 238000001451 molecular beam epitaxy Methods 0.000 claims abstract description 7
- 239000011261 inert gas Substances 0.000 claims abstract description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 20
- 229910052786 argon Inorganic materials 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 4
- 239000012535 impurity Substances 0.000 abstract description 12
- 239000011701 zinc Substances 0.000 abstract description 5
- 239000000758 substrate Substances 0.000 abstract description 4
- 229910052725 zinc Inorganic materials 0.000 abstract description 4
- 229910052711 selenium Inorganic materials 0.000 abstract description 3
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 abstract description 2
- 238000009834 vaporization Methods 0.000 abstract description 2
- 230000008016 vaporization Effects 0.000 abstract description 2
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 238000000746 purification Methods 0.000 description 3
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000007670 refining Methods 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002550 fecal effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
Landscapes
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は分子線エピタキシ−法による半導体の製造方法
に関し、特に原料の精製に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a method for manufacturing semiconductors by molecular beam epitaxy, and particularly to the purification of raw materials.
従来の技術
従来は原料を結晶成長に使用する前に超高真空中で加熱
し分子線を飛ばすことＫよシ、原料中の不純物も分子線
ととも【飛ばして原料を精製していた。Conventional technology In the past, raw materials were purified by heating them in an ultra-high vacuum and blowing off molecular beams before using them for crystal growth, and impurities in the raw materials were also removed along with the molecular beams.
発明が解決しようとする問題点
しかし、超高真空中で原料を加熱し分子線を飛ばすこと
により原料は減少してしまうためて原料が有効に使われ
ないという開運と同時に１その原料の減少があるために
原料を十分高温加熱して不純物を素早く取り除くことが
できないという問題があった。Problems that the invention aims to solveHowever, by heating the raw material in an ultra-high vacuum and emitting molecular beams, the raw material is reduced, so the raw material cannot be used effectively. Therefore, there was a problem in that it was not possible to heat the raw material to a sufficiently high temperature to quickly remove impurities.
そこで本発明は原料を十分に高温加熱し不純物を素早く
取り除くとともて原料の分子線を押えて原料の減少を極
めて少なくできるようにしたものである。Therefore, the present invention heats the raw material at a sufficiently high temperature to quickly remove impurities and suppresses the molecular beams of the raw material, thereby making it possible to extremely minimize the loss of the raw material.
問題点を解決するための手段
そして上記問題点を解決する本発明の技術的な手段は次
のようである。まずチャンバ内を超高真空にまで引いて
から不活性ガス等のガス雰囲気にする。次にワヌードセ
ンセル等のるつぼの中に入った原料を十分に高温加熱し
原料を精製する。その後に再び超高真空にして半導体結
晶を成長させる。Means for solving the problems and technical means of the present invention for solving the above problems are as follows. First, the inside of the chamber is drawn to an ultra-high vacuum, and then a gas atmosphere such as an inert gas is created. Next, the raw material placed in a crucible such as a wanudsen cell is heated to a sufficiently high temperature to purify the raw material. After that, the semiconductor crystal is grown under ultra-high vacuum again.
作用 この技術的手段による作用は次のようになる。action The effect of this technical means is as follows.
原料を加熱するととＫより原料はるつぼ内で蒸気圧が高
くなり気化と液化を繰シ返すが、原料中の不純物も蒸気
圧が高くなる。ここでチャンバ内をガス雰囲気にしであ
るために、るつぼ口からの原料の拡散は押えられる。そ
のために原料の減少も押えられる。原料の拡散が少ない
ので原料を十分に高温加熱できるためて１より高い蒸気
圧となった不純物はるつぼ内で気化した状態で濃縮され
原料は精製される。原料を加熱することを停止すると同
時にチャンバを真空引きすることによシるつぼ内に気化
しである不純物は排気される。なおガス雰囲気にする前
にチャンバ内を超高真空にしてチャンバ壁の汚染を除い
であるのでガス雰囲気にした場合るつぼの周囲のチャン
バ壁から原料への汚染を防止することができる。When raw materials are heated, the vapor pressure of the raw materials becomes higher in the crucible than K, and the raw materials repeatedly vaporize and liquefy, but impurities in the raw materials also have higher vapor pressures. Since the inside of the chamber is made into a gas atmosphere, the diffusion of the raw material from the crucible mouth is suppressed. As a result, the reduction in raw materials can also be suppressed. Since the diffusion of the raw material is small, the raw material can be heated to a sufficiently high temperature, so that impurities that have a vapor pressure higher than 1 are concentrated in a vaporized state in the crucible, and the raw material is purified. By stopping the heating of the raw material and simultaneously evacuating the chamber, impurities vaporized in the crucible are evacuated. Note that before creating a gas atmosphere, the inside of the chamber is brought to an ultra-high vacuum to remove contamination of the chamber walls, so that when a gas atmosphere is created, contamination of the raw material from the chamber walls around the crucible can be prevented.
実施例
以下、本発明の一実施例を添付図面に基づいて説明する
。EXAMPLE Hereinafter, an example of the present invention will be described based on the accompanying drawings.
セレン化亜鉛（Ｚｎ５ｅ ）の半導体結晶を分子線エピ
タキシ−法により成長させる場合の原料となる亜鉛（Ｚ
ｎ ）及びセレン（Ｓａ）の精製てついて説明する。Zinc (Zn5e) is the raw material for growing zinc selenide (Zn5e) semiconductor crystals by molecular beam epitaxy.
n) and selenium (Sa) purification methods will be explained.
製造に用いる分子線エピタキシ−装置は超高真空排気装
置を備えた真空容器（チャンバ）内に複数の分子線源（
ワヌードセンセル）と基板支持機構などを設けた一種の
真空蒸着装置である。The molecular beam epitaxy equipment used for manufacturing uses multiple molecular beam sources (
This is a type of vacuum evaporation equipment equipped with a vacuum evaporation device (vanudo sensor cell) and a substrate support mechanism.
実際の原料（Ｚｎ又はｓｅ ） の精製は次のような
手順で行なう。まず高純度の原料を化学エツチング等例
よりその表面を浄化し、Ｚｎ及びＳｅ をそれぞれ個
別のワヌードセンセル３に装填する。The actual purification of the raw material (Zn or se) is carried out in the following manner. First, the surface of a high-purity raw material is purified by chemical etching or the like, and Zn and Se are loaded into separate Wanodsen cells 3, respectively.
原料の装填時に汚染されたチャンバ壁を清浄化するため
にチャンバ全体をベーキングする。チャンバ内が適当な
真空度に達した時にベーキングをやめる。チャンバの真
空度が１０−’ Ｔｏｒｒ以下の超高真空になった後て
高純度アルゴンガス１を約１０Ｔｏｒｒ封入する。次に
クヌードセンセル３中の原料６の蒸気圧が約１０Ｔｏｒ
ｒ程度になるようにワヌードセンセル３の温度を上げる
。原料６がオリフィス７から出ないためには原料６の蒸
気圧がアルゴンガス圧以下でアルゴンガス１によって原
料６の拡散が止められることが必要である。またアルゴ
ンガス圧が低過ぎる場合知は原料の原子６とアルゴンガ
ス１の原子の拡散領域が長くなり原料６がオリフィス７
から出てしまうのでアルゴンガス圧はＩ ＴＯｒｒ以上
であることが望ましい。上記のようにアルゴンガス圧と
原料６の蒸気圧がともＫ １０ Ｔｏｒｒ程度になると
拡散領域は十分て薄くなシワヌードセンセル３に原料６
を閉じ込めることができる。そして原料が液化５と気化
６を繰り返すことにより原料中の不純物２は気化するが
不純物２の蒸気圧は飽和蒸気圧に達しないので不純物２
が原料５に戻ることはない。十分に原料５が精製された
後にワヌードセンセル３の温度ヲ下ケると同時にチャン
バを真空に引く。Bake the entire chamber to clean chamber walls that were contaminated during loading of raw materials. Stop baking when the chamber reaches a suitable degree of vacuum. After the degree of vacuum in the chamber reaches an ultra-high vacuum of 10-' Torr or less, high-purity argon gas 1 is filled in at about 10 Torr. Next, the vapor pressure of the raw material 6 in the Knudsen cell 3 is approximately 10 Torr.
The temperature of the Wanoud Sensel 3 is raised to about r. In order for the raw material 6 to not come out from the orifice 7, it is necessary that the vapor pressure of the raw material 6 be lower than the argon gas pressure and the diffusion of the raw material 6 to be stopped by the argon gas 1. Also, if the argon gas pressure is too low, the diffusion region of the atoms 6 of the raw material and the atoms of the argon gas 1 will become longer, and the raw material 6 will reach the orifice 7.
Therefore, it is desirable that the argon gas pressure be at least I Torr. As mentioned above, when the argon gas pressure and the vapor pressure of the raw material 6 are both about K 10 Torr, the diffusion region is sufficient to spread the raw material 6 into the thin wrinkle nude sensor cell 3.
can be confined. Then, as the raw material repeats liquefaction 5 and vaporization 6, impurity 2 in the raw material is vaporized, but the vapor pressure of impurity 2 does not reach the saturated vapor pressure, so impurity 2
will not return to raw material 5. After the raw material 5 is sufficiently purified, the temperature of the Wanoudsen cell 3 is lowered and at the same time the chamber is evacuated.
再びチャンバを１０−９Ｔｏｒｒ以下の超高真空にまで
排気する。その後に、各分子線源を加熱し適切な分子線
強度が得られるようにする。そして基板を結晶成長温度
に設定した後にＺｎ及びＳｓの分子線を基板に照射する
ことによって高純度のＺｎ５ｅ半導体結晶を成長させる
。The chamber is again evacuated to an ultra-high vacuum of 10-9 Torr or less. Thereafter, each molecular beam source is heated to obtain an appropriate molecular beam intensity. After setting the substrate to a crystal growth temperature, the substrate is irradiated with Zn and Ss molecular beams to grow a high purity Zn5e semiconductor crystal.
なお、アルゴンガスの他の不活性ガスでも同様の効果が
あることは明らかである。そして不活性ガスはるつぼの
口に垂直に当たるように流した場合にも適用できる。Note that it is clear that the same effect can be obtained using inert gases other than argon gas. It can also be applied when the inert gas is flowed perpendicularly to the mouth of the crucible.
発明の効果
以上述べてきたように、本発明によれば原料をチャンバ
内で精製することにより高純度の半導体結晶を得ること
ができた。その結果、原料中の不純物に問題のある化合
物半導体で分子線エピタキシ−法を用いる場合には高純
度の半導体結晶が実現でき、実用的にきわめて有用であ
る。Effects of the Invention As described above, according to the present invention, a highly pure semiconductor crystal could be obtained by refining the raw material in a chamber. As a result, when the molecular beam epitaxy method is used for compound semiconductors that have problems with impurities in their raw materials, highly pure semiconductor crystals can be obtained, which is extremely useful in practice.
図は本発明の一実施例における原料精製時のクヌードセ
ンセルの断面図である。
１・・・・・・アルゴンガス、２・・・・・・不純物、
３・・・・・・クヌードセンセル、４・・・・・・ヒー
ター線、５・・・・・・液化した原料、６・・・・・・
気化した原料、７・・・・・・オリフィス。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名グー
−−アルゴ゛ンカ゛ス
２− 不苑物
３−・ クヌードセンセル
４−゛ ヒーター線
５−−一 液化した原料
６−−− 便ゴヒした股斗
７− オリフィスThe figure is a cross-sectional view of a Knudsen cell during raw material refining in one embodiment of the present invention. 1... Argon gas, 2... Impurities,
3... Knudsen cell, 4... Heater wire, 5... Liquefied raw material, 6...
Vaporized raw material, 7... Orifice. Name of agent: Patent attorney Toshio Nakao and one other person - Algorithm 2 - Fuenmono 3 - Knud Sensel 4 - Heater wire 5 - Liquefied raw material 6 - Fecal material 7- Orifice
Claims (7)
ｏｒｒ以下の超高真空にした後にガス雰囲気のチャンバ
内で原料のるつぼを加熱し前記原料を精製した後に真空
にし半導体結晶を成長させることを特徴とする半導体装
置の製造方法。(1) In molecular beam epitaxy method, 10^-^9T
1. A method for manufacturing a semiconductor device, which comprises creating an ultra-high vacuum of less than orr, heating a crucible of raw materials in a chamber with a gas atmosphere, purifying the raw materials, and then vacuuming to grow a semiconductor crystal.
許請求の範囲第１項記載の半導体装置の製造方法。(2) The method for manufacturing a semiconductor device according to claim 1, wherein an inert gas such as argon is used as the gas.
の範囲第１項記載の半導体装置の製造方法。(3) The method for manufacturing a semiconductor device according to claim 1, wherein the gas pressure is set to 1 Torr or more.
項乃至第３項のいずれかに記載の半導体装置の製造方法
。(4) Claim 1 in which gas is sealed in the chamber
A method for manufacturing a semiconductor device according to any one of items 1 to 3.
求の範囲第１項乃至第３項のいずれかに記載の半導体装
置の製造方法。(5) The method for manufacturing a semiconductor device according to any one of claims 1 to 3, wherein the gas is caused to flow perpendicularly to the crucible mouth.
の範囲第１項乃至第５項のいずれかに記載の半導体装置
の製造方法。(6) A method for manufacturing a semiconductor device according to any one of claims 1 to 5, using a Wanoudsen cell as a crucible.
うに設定する特許請求の範囲第１項乃至第６項のいずれ
かに記載の半導体装置の製造方法。(7) The method for manufacturing a semiconductor device according to any one of claims 1 to 6, wherein the temperature of the raw material is set so that the vapor pressure of the raw material is equal to or lower than the gas pressure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15310886A JPS639113A (en) | 1986-06-30 | 1986-06-30 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15310886A JPS639113A (en) | 1986-06-30 | 1986-06-30 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS639113A true JPS639113A (en) | 1988-01-14 |
Family
ID=15555145
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15310886A Pending JPS639113A (en) | 1986-06-30 | 1986-06-30 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS639113A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4960721A (en) * | 1987-11-10 | 1990-10-02 | Kabushiki Kaisha Toshiba | Method for purifying group II-IV compound semiconductors |
-
1986
- 1986-06-30 JP JP15310886A patent/JPS639113A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4960721A (en) * | 1987-11-10 | 1990-10-02 | Kabushiki Kaisha Toshiba | Method for purifying group II-IV compound semiconductors |
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