JPS6390807A - Voltage nonlinear resistor - Google Patents

Voltage nonlinear resistor

Info

Publication number
JPS6390807A
JPS6390807A JP61236746A JP23674686A JPS6390807A JP S6390807 A JPS6390807 A JP S6390807A JP 61236746 A JP61236746 A JP 61236746A JP 23674686 A JP23674686 A JP 23674686A JP S6390807 A JPS6390807 A JP S6390807A
Authority
JP
Japan
Prior art keywords
bismuth
sintered body
phase
varistor
contained
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61236746A
Other languages
Japanese (ja)
Other versions
JPH0253933B2 (en
Inventor
武志 鈴木
清 松田
菊地 幸輝
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Marcon Electronics Co Ltd
Original Assignee
Marcon Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Marcon Electronics Co Ltd filed Critical Marcon Electronics Co Ltd
Priority to JP61236746A priority Critical patent/JPS6390807A/en
Publication of JPS6390807A publication Critical patent/JPS6390807A/en
Publication of JPH0253933B2 publication Critical patent/JPH0253933B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Compositions Of Oxide Ceramics (AREA)
  • Thermistors And Varistors (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 [発明の目的] (産業上の利用分野) 本発明は熱履歴に対して優れた安定性をもつビスマスを
含有する酸化亜鉛系の電圧非直線抵抗体(以下バリスタ
と称す)に関する。
[Detailed Description of the Invention] [Objective of the Invention] (Industrial Application Field) The present invention is directed to a zinc oxide-based voltage nonlinear resistor (hereinafter referred to as a varistor) containing bismuth, which has excellent stability against thermal history. related to).

(従来の技術) 昨今、各種バリスタの開発はめざましいものがあり、中
でもビスマスを含有した酸化亜鉛系のバリスタはその優
れた非直線性、サージ吸収性および定電圧性などの安定
性が認められ、雷サージおよび異常電圧に対する防護用
バリスタまたは定電圧バリスタとして広く用いられてい
る。しかしてこの種バリスタは、主成分としての酸化亜
鉛に添加物としてビスマス、コバルト。
(Prior art) In recent years, there has been a remarkable development of various varistors, and among them, zinc oxide-based varistors containing bismuth have been recognized for their excellent stability in nonlinearity, surge absorption, and constant voltage performance. Widely used as a protective varistor or constant voltage varistor against lightning surges and abnormal voltages. However, this type of varistor uses zinc oxide as the main component and bismuth and cobalt as additives.

マンガン、ニッケル、クロムなどを数種から10数種添
加混合し、造粒成形焼結してなる焼結体両面に銀ペース
トを塗布−焼付けするか、または電極金属をメタリコン
するかなどの手段を経て電極を形成し実用に供している
Several to ten or more types of manganese, nickel, chromium, etc. are added and mixed, and the sintered body is granulated and sintered. Silver paste is coated on both sides of the sintered body and then baked, or the electrode metal is metallized. After that, electrodes were formed and put into practical use.

しかして、このようにして用いられるバリスタは、実用
上通常(正常)の電圧状態においてはアイドリング電流
(漏れ電流)が少なく、異常電圧、雷サージ吸収時はそ
の吸収能力が大きく、その後の電気的特性の変化がきわ
めて少ないことが要求されている。従来、このような要
求に応える技術として特公昭53−21509号公報、
または特公昭60−38841号公報に開示されたもの
がある。
Therefore, the varistor used in this way has a small idling current (leakage current) under normal (normal) voltage conditions, and has a large absorption capacity when absorbing abnormal voltages and lightning surges, and the subsequent electrical It is required that the change in characteristics be extremely small. Conventionally, as a technique to meet such demands, Japanese Patent Publication No. 53-21509,
Alternatively, there is one disclosed in Japanese Patent Publication No. 60-38841.

特公昭53−21509号公報(以下前者と称す)に開
示された技術は、焼結体中に含まれるBi2O3のうち
10%以上をγ−Bi2O3として含ませることにより
直流負荷に対して安定で、さらにパルス電流に対しても
安定で優れたバリスタ特性を発揮するようにしたもので
ある。
The technology disclosed in Japanese Patent Publication No. 53-21509 (hereinafter referred to as the former) is stable against DC loads by containing 10% or more of the Bi2O3 contained in the sintered body as γ-Bi2O3. Furthermore, it is designed to exhibit stable and excellent varistor characteristics even with pulsed current.

また特公昭60−38841号公報(以下後者と称す)
に開示された技術は、銀を含むホウケイ酸ビスマスガラ
スが添加され、焼結体中のBi2O3の90重量%以上
を体心立法品系酸化ビスマス(γ−81203)にする
ことによって、きわめて苛酷な課電条件下においても長
時間経過後の漏れ電流の経時変化がきわめて少なく、し
かも時間とともに減少するような特性をもつバリスタに
関するものである。
Also, Special Publication No. 60-38841 (hereinafter referred to as the latter)
The technology disclosed in 2003-2020 is characterized by the addition of silver-containing bismuth borosilicate glass and by making more than 90% by weight of the Bi2O3 in the sintered body into body-centered cubic bismuth oxide (γ-81203). The present invention relates to a varistor having characteristics such that leakage current changes over time even after a long period of time under electrical conditions, and furthermore, decreases over time.

すなわら前者は添加物の種類や仮焼条件、焼成条件など
によって焼結体にα−Bi203相。
In other words, the former has an α-Bi203 phase in the sintered body depending on the type of additives, calcination conditions, firing conditions, etc.

β−B i 203 相、7−B i 203 相(7
)他ニδ−Bi203相が生成され、また焼成した時点
ではγ−Bi2O3相を含まない焼結体でも電極焼付、
または使用中の再加熱下などの熱履歴を経るとα−Bi
203相、β−Bi203相、δ−Bi203相がγ−
Bi2O3相に変態する場合のγ−Bt203相が10
%以上のときに安定なバリスタが得られることを究明し
たものである。後者は銀を含むホウケイ酸ビスマスガラ
スを添加して得られた酸化ビスマスを含む焼結体を構成
する酸化ビスマスは通常800〜900℃で反応を開始
し、いったんはバイロクロア結晶相を形成し、ついで分
解してスピネル結晶相と酸化ビスマス(1)の液相を生
じ、酸化亜鉛の焼結が進行する過程で形成されるβ−3
i2Q3相、δ−8i203相を含む焼結体をジャーナ
ル・オプ・アブライズド・フィジックス(日本国)、1
5巻(1976年)1847頁に記載の方法に準じて、
大気中において700℃で再焼成することによって焼結
体中の酸化ビスマス(III)の90%以上をγ−Bi
2O3相に相変化させることによって安定なバリスタが
得られることを究明したものである。
β-B i 203 phase, 7-B i 203 phase (7
) In addition, δ-Bi203 phase is generated, and electrode baking occurs even in the sintered body that does not contain γ-Bi2O3 phase at the time of firing.
Or after a thermal history such as reheating during use, α-Bi
203 phase, β-Bi203 phase, δ-Bi203 phase is γ-
The γ-Bt203 phase when transformed to the Bi2O3 phase is 10
% or more, a stable varistor can be obtained. The latter is obtained by adding silver-containing bismuth borosilicate glass. Bismuth oxide, which constitutes a sintered body containing bismuth oxide, usually starts to react at 800 to 900°C, once forming a birochlore crystal phase, and then β-3 decomposes to produce a spinel crystal phase and a liquid phase of bismuth oxide (1), and is formed during the progress of sintering of zinc oxide.
A sintered body containing i2Q3 phase and δ-8i203 phase was published in Journal of Absorbed Physics (Japan), 1
According to the method described in Volume 5 (1976) page 1847,
By re-firing at 700°C in the atmosphere, more than 90% of the bismuth (III) oxide in the sintered body is converted to γ-Bi.
It was discovered that a stable varistor can be obtained by changing the phase to the 2O3 phase.

本発明者らは以上に述べた技術を前提に秤々検討を重ね
た結果、上記従来技術として開示されている前者、後者
とも焼結体中に含まれるα。
As a result of extensive studies based on the above-mentioned technology, the present inventors found that α contained in the sintered body in both the former and the latter disclosed as the above-mentioned prior art.

β、δそれぞれのBi2O3相を呈ツる酸化ビスマスが
製造工程中の熱履歴、すなわち電極焼付時、または電極
形成として熱履歴をともなわないメッキ、メタリコンの
ものでも実用時の電気エネルギーの累積熱履歴によって
γ−B i 203相に変態(相変化)し低電流領域で
電圧−電流(V−1)特性が低下する点がわかった。
The thermal history of bismuth oxide exhibiting the Bi2O3 phase of β and δ during the manufacturing process, that is, the cumulative thermal history of electrical energy during practical use even for plated and metallicon products that do not have a thermal history during electrode baking or electrode formation. It was found that the γ-B i 203 phase transforms (phase change) and the voltage-current (V-1) characteristic decreases in the low current region.

しかして本発明者らは焼結体を構成する酸化亜鉛を主成
分とした結晶粒子の粒界偏析部に熱に安定なビスマス化
合物を生成させることによって粒界偏析部を構成するB
i2O3相の熱による相変化を少なくすることができる
点に着目し種々開発を進め本発明にいたった。
However, the present inventors have discovered that B, which constitutes the grain boundary segregation region, is produced by producing a thermally stable bismuth compound in the grain boundary segregation region of the crystal grains mainly composed of zinc oxide that constitute the sintered body.
Focusing on the fact that the phase change due to heat in the i2O3 phase can be reduced, various developments were carried out, leading to the present invention.

(発明が解決しようとする問題点) 以上のように安定なバリスタを得るため、添加物の種類
や仮焼条件、焼成条件などによって焼結体中の結晶粒子
の粒界偏析部に形成されるBt203相中所望の吊のγ
−Bi2O3相を得たとしても、残りのα、β、δそれ
ぞれのBi2O3相がその後の熱履歴、つまり電極焼付
および使用中の電気エネルギーによって相変化を起こし
、低電流領域でのV−1特性の低下を防止することがで
きない。
(Problems to be Solved by the Invention) As described above, in order to obtain a stable varistor, varistors are formed at grain boundary segregation areas of crystal grains in a sintered body depending on the type of additives, calcination conditions, firing conditions, etc. Desired suspension γ in Bt203 phase
- Even if the Bi2O3 phase is obtained, the remaining α, β, and δ Bi2O3 phases undergo a phase change due to subsequent thermal history, that is, electrode baking and electrical energy during use, resulting in V-1 characteristics in the low current region. It is not possible to prevent the decline in

本発明は焼結体中の粒界偏析部に存在するBi2O3相
を減らすことによって、非直線性に優れU時変化のない
きわめて安定性の高いバリスタを提供することを目的と
するものである。
The object of the present invention is to provide an extremely stable varistor with excellent nonlinearity and no change over time by reducing the Bi2O3 phase present in the grain boundary segregated areas in a sintered body.

[発明の構成] (問題点を解決するための手段) 本発明のバリスタは酸化亜鉛を主成分とし、添加物とし
て少なくともカルシウム、ビスマス。
[Structure of the Invention] (Means for Solving the Problems) The varistor of the present invention contains zinc oxide as a main component, and at least calcium and bismuth as additives.

スズ、アンチモンを含み、該添加物中のカルシウムとビ
スマス、スズとビスマスの関係がCa/B i =0.
05〜0.5゜ Sn/B1−0.2 〜2.0 の範囲で、ビスマスをB1□03に換算し【0.05〜
1.0モル%、アンチモンをSb2O3に換算して0.
05〜3.0モル%含有してなる焼結体における酸化亜
鉛を主成分とする結晶粒子の粒界偏析部に、前記焼結体
中の全ビスマスの50%以上をバイロクロア型化合物で
あるように構成してなるものである。
Contains tin and antimony, and the relationship between calcium and bismuth, and between tin and bismuth in the additive is Ca/B i =0.
05~0.5゜Sn/B1-0.2~2.0, convert bismuth to B1□03: 0.05~
1.0 mol%, 0.0% when antimony is converted to Sb2O3.
In a sintered body containing 05 to 3.0 mol%, at least 50% of the total bismuth in the sintered body is contained in a birochlore-type compound in the grain boundary segregation of crystal grains containing zinc oxide as a main component. It is composed of:

(作用) 以上のような構成になるバリスタによれば、焼結体中の
結晶粒子の粒界偏析部に介在する偏析物として全ビスマ
スの50%以上をバイロクロア型化合物にすることによ
って1000℃程度まで変態しない熱的に安定な物質と
して形成でき、熱履歴過程でγ−Bi2O3相に相変化
するBi2O3相が極力少なくなり、低電流領域でのV
−■特性の低下はきわめて少なく、従来では得ることの
できない優れた非直線特性を得ることができる。
(Function) According to the varistor configured as described above, by converting 50% or more of the total bismuth into a birochlore type compound as a segregated substance intervening in the grain boundary segregation area of crystal grains in the sintered body, the varistor can be heated to about 1000°C. It can be formed as a thermally stable material that does not undergo any transformation up to
-■ There is very little deterioration in characteristics, and excellent nonlinear characteristics that cannot be obtained conventionally can be obtained.

(実施例) 以下、本発明の実施例につぎ詳細に説明する。(Example) Hereinafter, embodiments of the present invention will be described in detail.

主成分としての酸化亜鉛(ZnO)に添加物として酸化
ビスマス(B ;2o3>、M化カルシウム(Cab)
、FA化スズ<5n02)、酸化アンチモン(Sb20
3>、M化コバルト(COO>、a化りロム(Cr2 
o3)、M化ニッケル(Nip)、酸化マンガン(Mn
O)の酸化物の中から少なくとも酸化カルシウム、酸化
ビスマス、酸化スズ、酸化アンチモンを含み、該添加物
中のカルシウムとビスマス、スズとビスマスの関係が Ca/B i =0.05〜0.5゜ Sn/Bi=0.2〜2.0の範囲で、Bi  OO,
05〜1.0モル%。
Zinc oxide (ZnO) as the main component, bismuth oxide (B ; 2o3>, calcium chloride (Cab) as additives)
, FA tin<5n02), antimony oxide (Sb20
3>, Cobalt M (COO>, ROM (Cr2)
o3), nickel Mide (Nip), manganese oxide (Mn
It contains at least calcium oxide, bismuth oxide, tin oxide, and antimony oxide from among the oxides of O), and the relationship between calcium and bismuth and tin and bismuth in the additive is Ca/B i =0.05 to 0.5.゜Sn/Bi=0.2 to 2.0, Bi OO,
05-1.0 mol%.

Sb203 0.05〜3.0モル%を含有するセラミ
ック粉末を造粒成形し1000〜1300℃の温度で焼
成し、得た板状焼結体の両面に銀焼付、メッキまたはメ
タリコンなどを施し電極を形成してなるものである。
Ceramic powder containing 0.05 to 3.0 mol% of Sb203 is granulated and fired at a temperature of 1000 to 1300°C, and both sides of the obtained plate-shaped sintered body are coated with silver baking, plating, or metallized to form electrodes. It is formed by forming.

表は添加物の種類および添加m(モル%)のちがいによ
る銀焼付電極形成と同じ条件となる700℃熱処理を施
した焼結体のX線回折によるメインビーク強度比から求
めたZnO結晶粒子間を構成する粒界偏析部成分として
のバイロクロア型化合物に含まれるビスマス吊と、焼結
体自体の電気的特性を把握するために熱履歴をともなわ
せないアルミニウムメタリコン電極形成によって測定し
たVloo μA−VI IrLAのα、熱履歴をとも
なう銀焼付電極形成によって測定したviooμ△−V
l 77LAのα、さらにはVl mA/sを示したも
のである。
The table shows the difference between ZnO crystal grains determined from the main peak intensity ratio by X-ray diffraction of a sintered body heat-treated at 700°C under the same conditions as for forming a silver baked electrode, depending on the type of additive and m (mol%) added. Vloo μA-VI was measured by forming an aluminum metallicon electrode without thermal history in order to understand the birochlore-type compound contained in the birochlore-type compound as a component of the grain boundary segregation component that constitutes the sintered body, and the electrical characteristics of the sintered body itself. α of IrLA, viooμ△-V measured by silver-baked electrode formation with thermal history
It shows α of l77LA and also Vl mA/s.

なお、試料として用いた焼結体の大きさは直径が14m
lR1厚さが1Mで、電極直径は13.4#である。
The size of the sintered body used as a sample was 14 m in diameter.
The lR1 thickness is 1M and the electrode diameter is 13.4#.

つぎに前記表に示した結果をわかりやすくするため、第
1図〜第9図を参照して説明する。
Next, in order to make the results shown in the table above easier to understand, the results will be explained with reference to FIGS. 1 to 9.

第1図および第3図はCa/B iまたはSn/3iと
非直線性α(V 100μA−V177LA)の関係を
示すもので、第2図および第4図はCa/BiまたはS
n/Biとバイロクロア型化合物に含まれるビスマス量
を示ずもので、第1図および第2図におけるSn/Bi
は1.0、第3図および第4図におけるCa/B iは
0.25のときである。また第5図はバイロクロア型化
合物に含まれるビスマス間と700℃のアニールによる
LC変動との関係を示すもので、第6図はバイロクロア
型化合物に含まれるビスマス量と高温課電(105℃、
DC2yrLA。
Figures 1 and 3 show the relationship between Ca/Bi or Sn/3i and nonlinearity α (V 100μA-V177LA), and Figures 2 and 4 show the relationship between Ca/Bi or Sn/3i and nonlinearity α (V 100μA-V177LA).
Sn/Bi in Figures 1 and 2 does not indicate the amount of bismuth contained in n/Bi and birochlore type compounds.
is 1.0, and Ca/B i in FIGS. 3 and 4 is 0.25. Furthermore, Figure 5 shows the relationship between bismuth contained in a virochlore type compound and LC fluctuation due to annealing at 700°C, and Figure 6 shows the relationship between the amount of bismuth contained in a virochlore type compound and high temperature electrification (105°C,
DC2yrLA.

1000h)後によるLC変動との関係を示すものであ
る。なお、この試料はアルミニウムメタリコン電極によ
るものである。さらに第7図は前記表に示す実施例9と
従来例73のv100μA−VlmAの電圧−電流特性
を示すものであり、第8図および第9図は第7図で用い
たものと同一試料のX線回折グラフを示すもので、第8
図は熱処理前、第9図は焼結体の熱処理(700℃)後
である。
It shows the relationship with LC fluctuation after 1000h). Note that this sample uses an aluminum metallicon electrode. Furthermore, FIG. 7 shows the voltage-current characteristics of v100μA-VlmA of Example 9 and Conventional Example 73 shown in the table above, and FIGS. 8 and 9 show the voltage-current characteristics of the same sample used in FIG. This shows an X-ray diffraction graph, and the 8th
The figure shows the sintered body before heat treatment, and FIG. 9 shows the sintered body after heat treatment (700° C.).

前記表および第1図〜第4図から明らかなように、Ca
/B iおよびSn/8iが大きくなるほどバイロクロ
ア型化合物に含まれるビスマスの割合が増加する傾向を
示す中で、非直線性αが極大となるCa/B iおよび
Sn/Biの範囲はCa/B i=0.05〜0.5゜
Sn/B i =0.2〜2.0であることがわかる。
As is clear from the above table and FIGS. 1 to 4, Ca
The proportion of birochlore contained in birochlore type compounds tends to increase as /B i and Sn/8i increase, and the range of Ca/B i and Sn/Bi where nonlinearity α becomes maximum is Ca/B It can be seen that i=0.05-0.5°Sn/B i =0.2-2.0.

すなわち焼結体の粒界偏析部にバイロクロア型化合物に
含まれるビスマス母の増加によってBi2O3が減少し
すぐれた非直線性を示すが、Ca/B + 、Sn/B
 iが上限を越して大きくなりすぎるとバイロクロア化
する反応ステージが早くなりすぎ、焼結性を損うことに
よるものと推量される。また前記表はもとより第5図お
よび第6図から明らかなように、パイ[」クロア型化合
物に含まれるビスマスけが50%以上となるものは熱履
歴による非直線性α特性の変化がきわめて少なくすぐれ
たバリスタ特性を示している。さらに第7図から明らか
なようにバイロクロア型化合物が存在しない従来例のも
のは低電流領域での電圧低下が著しいのに対し、本発明
のものは電流が1μAという低電流領域でも電圧降下は
わずかで漏れ電流がきわめて小さい結果を示した。しか
して、本発明によるものが以上のようなすぐれた効果を
発揮する根拠については第8図および第9図によって明
らかなように、焼結体のM品粒子間の粒界偏析部にバイ
ロクロア型化合物を含み、該バイロクロア型化合物に焼
結体中に含まれる全ビスマスの50%以上を含有させ熱
膿歴により相変化するB12o3相を少なく抑制できる
ことによるものである。
In other words, Bi2O3 decreases due to the increase in birochlore-type compound bismuth matrix contained in the grain boundary segregation area of the sintered body, resulting in excellent nonlinearity, but Ca/B + , Sn/B
It is presumed that if i becomes too large beyond the upper limit, the reaction stage of birochlorization becomes too rapid, impairing sinterability. Furthermore, as is clear from the above table as well as from Figures 5 and 6, pi[''chlore type compounds containing bismuth damage of 50% or more have very little change in the nonlinear α characteristic due to thermal history and are excellent. This shows the characteristics of the varistor. Furthermore, as is clear from FIG. 7, the voltage drop in the conventional example without the presence of a virochlore type compound is significant in the low current range, whereas the voltage drop in the current example is only slight even in the low current range of 1 μA. The results showed that the leakage current was extremely small. However, the reason why the product according to the present invention exhibits the above-mentioned excellent effects is as clear from FIGS. 8 and 9, as it is clear from FIGS. This is because the birochlore-type compound contains 50% or more of the total bismuth contained in the sintered body, and the B12o3 phase, which changes in phase due to heat and purulent history, can be suppressed to a small extent.

なお、ビスマスの一部は相変化しないガラス化ビスマス
として存在するものと推量される。
It is assumed that a part of bismuth exists as vitrified bismuth that does not undergo phase change.

[発明の効果] 以上述べたように本発明によれば、非直線性にすぐれ、
かつ熱履歴に対して特性劣化のないきわめて安定した実
用的価値の高いバリスタを得ることができる。
[Effects of the Invention] As described above, according to the present invention, it has excellent nonlinearity,
Moreover, it is possible to obtain an extremely stable varistor with high practical value without characteristic deterioration due to thermal history.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はCa/B i−α特性曲線図、第2図はca/
at−バイロクロア型化合物に含まれるビスマスmの相
関図、第3図はSn/Bi−α特性曲線図、第4図はS
n/Bi−バイロクロア型化合物に含まれるビスマスm
の相関図、第5図はバイロクロア型化合物に含まれるビ
スマス徂−アニールによる△LC/LC特性曲線図、第
6図はバイロクロア型化合物に含まれるビスマス聞−高
温課電によるΔLC/LC特性曲線図、第7図は電流−
電圧比特性曲線図、第8図は熱処理前の焼結体のX線回
折グラフ、第9図は熱処理後の焼結体のX線回折グラフ
である。 特  許  出  願  人 マルコン電子株式会社 Ca/B + 第  1  図 Ca/B を 第  2  図 第  3  図 3n/Bi 第  4  図 バイロクロア型化合物に含まれるビスマス聞 (%)第
  5  図 バイロクロア型化合物に含まれるビスマスa (%)第
  6  図 1 tl   10u   100μm’aA   1
0W/ci’II(1) 第  7  図 従  来  例 (ワ3) 、。                      実
  施  例 (9)2θ(den) D”/:CIVrOCillOr13 従  来  例 (73) 寅  施  例 (9) sp:5pinel Dy:0/rOc+110re
Figure 1 is a Ca/B i-α characteristic curve diagram, Figure 2 is a ca/B i-α characteristic curve diagram.
A correlation diagram of bismuth m contained in at-virochloa type compounds, Figure 3 is a Sn/Bi-α characteristic curve diagram, and Figure 4 is a diagram of S
Bismuth m contained in n/Bi-Birochlore type compound
Figure 5 is a ΔLC/LC characteristic curve diagram due to annealing between bismuth contained in a virochlore type compound, and Figure 6 is a diagram showing a ΔLC/LC characteristic curve between bismuth contained in a virochlore type compound and due to high temperature charging. , Figure 7 shows the current -
A voltage ratio characteristic curve diagram, FIG. 8 is an X-ray diffraction graph of the sintered body before heat treatment, and FIG. 9 is an X-ray diffraction graph of the sintered body after heat treatment. Patent application Marcon Electronics Co., Ltd. Ca/B Contained bismuth a (%) Fig. 1 tl 10u 100μm'aA 1
0W/ci'II (1) Fig. 7 Conventional example (W3). Implementation example (9) 2θ (den) D”/:CIVrOCillOr13 Conventional example (73) Tora Implementation example (9) sp:5pinel Dy:0/rOc+110re

Claims (1)

【特許請求の範囲】  酸化亜鉛を主成分とし、少なくともカルシウム、ビス
マス、スズ、アンチモンの添加物を含み、該添加物中の
カルシウムとビスマス、スズとビスマスの関係が Ca/Bi=0.05〜0.5、 Sn/Bi=0.2〜2.0 の範囲で、ビスマスをBi_2O_3に換算して0.0
5〜1.0モル%、アンチモンを Sb_2O_3に換算して0.05〜3.0モル%含有
してなる焼結体における結晶粒子の粒界偏析部に、前記
焼結体中の全ビスマスの50%以上を化合したバイロク
ロア型化合物を含有したことを特徴とする電圧非直線抵
抗体。
[Scope of Claims] The main component is zinc oxide, and contains at least additives of calcium, bismuth, tin, and antimony, and the relationships between calcium and bismuth, and between tin and bismuth in the additives are Ca/Bi=0.05 to 0.5, in the range of Sn/Bi=0.2 to 2.0, bismuth is converted to Bi_2O_3 and is 0.0.
In a sintered body containing 5 to 1.0 mol% of antimony and 0.05 to 3.0 mol% of antimony calculated as Sb_2O_3, the total amount of bismuth in the sintered body is A voltage nonlinear resistor characterized in that it contains 50% or more of a virochlore type compound.
JP61236746A 1986-10-03 1986-10-03 Voltage nonlinear resistor Granted JPS6390807A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61236746A JPS6390807A (en) 1986-10-03 1986-10-03 Voltage nonlinear resistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61236746A JPS6390807A (en) 1986-10-03 1986-10-03 Voltage nonlinear resistor

Publications (2)

Publication Number Publication Date
JPS6390807A true JPS6390807A (en) 1988-04-21
JPH0253933B2 JPH0253933B2 (en) 1990-11-20

Family

ID=17005175

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61236746A Granted JPS6390807A (en) 1986-10-03 1986-10-03 Voltage nonlinear resistor

Country Status (1)

Country Link
JP (1) JPS6390807A (en)

Also Published As

Publication number Publication date
JPH0253933B2 (en) 1990-11-20

Similar Documents

Publication Publication Date Title
EP0115149A1 (en) Varistor and method for manufacturing the same
JPS6390807A (en) Voltage nonlinear resistor
JP2510961B2 (en) Voltage nonlinear resistor
JP2005145809A (en) Zinc oxide-based sintered compact, zinc oxide varistor, and lamination type zinc oxide varistor
JPS6390805A (en) Voltage nonlinear resistor
JP2531586B2 (en) Voltage nonlinear resistor
JP2625178B2 (en) Varistor manufacturing method
JPS6390806A (en) Voltage nonlinear resistor
JPS6390802A (en) Voltage nonlinear resistor
JPS6390803A (en) Voltage nonlinear resistor
JPS63312616A (en) Semiconductor porcelain composition
JPS63281405A (en) Voltage non-linear resistance material
JPS6390804A (en) Voltage nonlinear resistor
JPS62268102A (en) Voltage nonlinear resistance element
JPH01289206A (en) Voltage-dependent nonlinear resistance element and manufacture thereof
JPH07201531A (en) Voltage non-linear resistor porcelain composition and voltage non-linear resistor porcelain
JPH0379847B2 (en)
JPH0379848B2 (en)
JP3598177B2 (en) Voltage non-linear resistor porcelain
JPH029760A (en) Ceramic composition having high dielectric constant
JPS62286202A (en) Voltage nonlinear resistance unit
KR910001109B1 (en) Making process for varistor
KR20040078915A (en) Zinc Oxide Sintered Body, and Manufacturing Method thereof and Zinc Oxide Varistor
JPS63122101A (en) Voltage nonlinear resistor
JPH01289205A (en) Voltage-dependent nonlinear resistance element and manufacture thereof