JPS6390152A - Manufacture of substrate for semiconductor device - Google Patents
Manufacture of substrate for semiconductor deviceInfo
- Publication number
- JPS6390152A JPS6390152A JP23596186A JP23596186A JPS6390152A JP S6390152 A JPS6390152 A JP S6390152A JP 23596186 A JP23596186 A JP 23596186A JP 23596186 A JP23596186 A JP 23596186A JP S6390152 A JPS6390152 A JP S6390152A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- layer
- epitaxial layer
- forming
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 31
- 239000004065 semiconductor Substances 0.000 title claims abstract description 18
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 6
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000010703 silicon Substances 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 12
- 229910052596 spinel Inorganic materials 0.000 abstract description 9
- 239000011029 spinel Substances 0.000 abstract description 9
- 230000015572 biosynthetic process Effects 0.000 abstract description 4
- 239000013078 crystal Substances 0.000 abstract description 4
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 abstract 2
- 229910021480 group 4 element Inorganic materials 0.000 abstract 2
- 239000000395 magnesium oxide Substances 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 10
- 125000004429 atom Chemical group 0.000 description 8
- IEXRMSFAVATTJX-UHFFFAOYSA-N tetrachlorogermane Chemical compound Cl[Ge](Cl)(Cl)Cl IEXRMSFAVATTJX-UHFFFAOYSA-N 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- TWRXJAOTZQYOKJ-UHFFFAOYSA-L Magnesium chloride Chemical compound [Mg+2].[Cl-].[Cl-] TWRXJAOTZQYOKJ-UHFFFAOYSA-L 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- -1 hydrogen compound Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910001629 magnesium chloride Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔概要〕
シリコン（Ｓｉ）、或いはサファイア基板上にマグネシ
ャスピネル（ＭｇＯ−Ａ１２ｏ、）のような絶縁膜を形
成後、該絶縁膜上に単結晶のＳｉエピタキシャル層を形
成して５ｉｌｉｃｏｎ−ＯＮ−Ｉｎｓｕｌａｔｏｒ （
以下ＳＯＩ と称する）基板を形成し、このＳｉ層に半
導体素子を形成するＳＯ１基板の形成方法であって、こ
のＳｉエピタキシャル層を形成する際に、炭素（Ｃ）や
、ゲルマ互つム（Ｇｅ）等の■族原子を該Ｓｉエピタキ
シャル層内に添加してＳｉと■族原子との間で混晶を形
成することで、形成されるＳｉエピタキシャル層を無転
位の状態として形成されるＳＯ１基板の高信頼化を図る
。[Detailed Description of the Invention] [Summary] After forming an insulating film such as magnetic spinel (MgO-A12o) on a silicon (Si) or sapphire substrate, a single crystal Si epitaxial layer is formed on the insulating film. Form 5ilicon-ON-Insulator (
This is a method for forming an SO1 substrate in which a substrate (hereinafter referred to as SOI) is formed and a semiconductor element is formed on this Si layer. ) etc. into the Si epitaxial layer to form a mixed crystal between Si and the group II atoms, the SO1 substrate is formed with the Si epitaxial layer formed in a dislocation-free state. Aim to improve reliability.
本発明は半導体素子形成用基板の製造方法に係わり、特
にＳｏ１基板の製造方法に関する。The present invention relates to a method of manufacturing a substrate for forming a semiconductor element, and particularly to a method of manufacturing a So1 substrate.
Ｓｉ或いはサファイア基板上にマグネシャスピネルより
なる絶縁膜を形成し、この絶縁膜上に単結晶のＳｉエピ
タキシャル層を形成してＳＯＩ構造の半導体素子形成用
基板を形成し、このＳｉ層に半導体素子を形成すると、
素子間分離工程が容易となったり、或いは形成される素
子の浮遊容量が減少する等の利点が有るため、高耐圧、
高集積のＩＣ等の半導体装置形成に、このＳｏｌ構造の
基板が、最近多く利用されるように成ってきている。An insulating film made of magnetic spinel is formed on a Si or sapphire substrate, a single crystal Si epitaxial layer is formed on this insulating film to form a substrate for forming a semiconductor element with an SOI structure, and a semiconductor element is formed on this Si layer. When we form
It has the advantage of facilitating the isolation process between elements and reducing the stray capacitance of the formed elements.
Recently, substrates with this Sol structure have been increasingly used for forming semiconductor devices such as highly integrated ICs.
このような絶縁膜上に形成されるＳｉエピタキシャル層
は、通常のＳｉ基板上に直接形成されるＳｉエピタキシ
ャル層に比較して転位密度が大きい欠点があり、この転
位密度を低下したＳｉエピタキシャル層を設けたＳＯ■
基板が望まれている。The Si epitaxial layer formed on such an insulating film has the disadvantage of a higher dislocation density than the Si epitaxial layer formed directly on a normal Si substrate. SO established
A substrate is desired.
従来、このようなＳＯＩ構造の半導体素子形成用基板を
形成する際、第３図に示すように、厚さが５００μｍ程
度のＳｉ基板１上に１０００℃程度の成長温度で、塩化
マグネシウム（Ｍｇ Ｃｊ’ｚ）、アルミニウム（Ａｌ
）を原料として用い、水素ガス、炭酸ガス、塩化水素ガ
スを反応ガスとして用いた化学蒸着（ＣＶＤ）法により
マグネシャスピネル層よりなる絶縁層２を１μｍ程度の
厚さに形成する。Conventionally, when forming a substrate for forming a semiconductor element having such an SOI structure, as shown in FIG. 3, magnesium chloride (Mg Cj 'z), aluminum (Al
) is used as a raw material, and an insulating layer 2 made of a magnetic spinel layer is formed to a thickness of about 1 μm by a chemical vapor deposition (CVD) method using hydrogen gas, carbon dioxide gas, and hydrogen chloride gas as reaction gases.
更にその上にシラン（ＳｉＨ，）ガスを水素還元して単
結晶のＳｉエピタキシャル層３を素子形成に適した厚さ
に形成してｓｏｒ構造の半導体素子形成用基板を形成し
ていた。Furthermore, silane (SiH,) gas is reduced with hydrogen to form a single-crystal Si epitaxial layer 3 to a thickness suitable for device formation, thereby forming a substrate for forming a semiconductor device having a sor structure.
ところで、上記したＳｏｌ構造の基板のように、マグネ
シャスピネル膜より成る絶縁膜上に形成されたＳｉエピ
タキシャル層は、５ｉ０２膜より成る絶縁膜上に形成さ
れたＳｉエピタキシャル層より、格子整合が精度良く行
われているので、高品質なＳｉエピタキシャル層が得ら
れている。By the way, the Si epitaxial layer formed on the insulating film made of the magnetic spinel film, like the substrate with the above-mentioned Sol structure, has a higher lattice matching accuracy than the Si epitaxial layer formed on the insulating film made of the 5i02 film. This is a well-performed method, and high-quality Si epitaxial layers can be obtained.
然し、このようにして形成したＳｉエピタキシャル層に
はｌ ｘｌＯ”／ ｃｎ”程度の転位密度が発生し、素
子形成用に適したＳｉエピタキシャル層と成り難い。However, the Si epitaxial layer formed in this manner has a dislocation density of approximately l xlO''/cn'', making it difficult to form a Si epitaxial layer suitable for device formation.
本発明は上記した問題点を除去し、絶縁膜上に形成され
たＳｉエピタキシャル層の転位密度を低下させるように
した半導体素子形成用基板の製造方法の提供を目的とす
る。An object of the present invention is to provide a method for manufacturing a substrate for forming a semiconductor element, which eliminates the above-mentioned problems and reduces the dislocation density of a Si epitaxial layer formed on an insulating film.
本発明の半導体素子形成用基板の製造方法は、基板上に
絶縁膜を形成後、該絶縁膜上に単結晶シリコン層をエピ
タキシャル成長する際、前記エピタキシャル成長するシ
リコン層中に■族原子を５ｘｌＯ”／ Ｃｌ１１’以上
の濃度で添加する。In the method for manufacturing a substrate for forming a semiconductor element of the present invention, after an insulating film is formed on the substrate, when a single crystal silicon layer is epitaxially grown on the insulating film, group II atoms are added to the epitaxially grown silicon layer by 5xlO''/ Add at a concentration of Cl11' or higher.
本発明の半導体素子形成用基板の製造方法は、形成され
るＳｉエピタキシャル層中に、■族原子を５ ＸＩＯ”
／ａｎ３程度の高濃度に添加することで、形成されるＳ
ｉエピタキシャル層の格子定数を、Ｓｔの格子定数の５
．４３１人の値から外れるようにし、添加される■族原
子の種類によってエピタキシャル層の格子定数を大、小
いずれの方向へでもずらすようにして、絶縁膜の格子定
数と整合させるようにして形成されるエピタキシャル層
内の転位密度を低下させるようにする。In the method for manufacturing a substrate for forming a semiconductor element of the present invention, in the Si epitaxial layer to be formed, group III atoms are added to 5XIO''
S formed by adding at a high concentration of /an3
The lattice constant of the i epitaxial layer is set to 5 of the lattice constant of St.
．． The lattice constant of the epitaxial layer is made to deviate from the value of 431 people, and the lattice constant of the epitaxial layer is shifted in either the large or small direction depending on the type of group III atoms added, so as to match the lattice constant of the insulating film. The aim is to reduce the dislocation density within the epitaxial layer.
以下、図面を用いながら本発明の一実施例につき詳細に
説明する。Hereinafter, one embodiment of the present invention will be described in detail with reference to the drawings.
第１図に示すように、厚さが５００μｍ程度のＳｔ基板
１１に前記した方法を用いてマグネシャスピネルよりな
る絶縁膜１２を１μｍ程度の厚さに形成する。As shown in FIG. 1, an insulating film 12 made of magnetic spinel is formed to a thickness of about 1 μm on an St substrate 11 having a thickness of about 500 μm using the method described above.
次いで該基板を第２図に示す反応管１４内のサセラ°り
１５に設置した状態で導入し、この反応管内１４にバル
ブ１６を介してシラン（５ｉＨ４）ガスを導入し、反応
管１４内を９００〜１０００℃の温度に高周波コイル１
７を用いて加熱してシランガスを熱分解してＳｉのエピ
タキシャル層を形成する際に、同時に該反応管内に蒸発
器１８に充填されている四塩化ゲルマニウム液をキャリ
アガスを用いて１発させてパルプ１９を介して反応管１
４内に導入する。そしてこのゲルマニウムの塩化物のガ
スを、そのガス流量を調整して導入する。Next, the substrate is introduced into the reaction tube 14 shown in FIG. High frequency coil 1 at a temperature of 900-1000℃
7 to thermally decompose the silane gas to form an epitaxial layer of Si, at the same time, the germanium tetrachloride liquid filled in the evaporator 18 is ejected once into the reaction tube using a carrier gas. Reaction tube 1 through pulp 19
It will be introduced within 4. Then, this germanium chloride gas is introduced by adjusting the gas flow rate.
また四塩化ゲルマニウムを添加する代わりに、ゲルマニ
ウムの水素化合物を導入しても良い。Moreover, instead of adding germanium tetrachloride, a hydrogen compound of germanium may be introduced.
このようにして、第１図に示すように、形成されるＳｉ
エピタキシャル層１３にＧｅよりなる■族原子が５ ｘ
１０２６／ ｃｍ″の濃度に添加されるようにする。In this way, as shown in FIG.
In the epitaxial layer 13, there are 5 x group III atoms made of Ge.
1026/cm'' concentration.
このようにすれば、Ｓｉエピタキシャル層の格子定数は
、Ｇｅ原子を添加しない場合に比較して増大する。In this way, the lattice constant of the Si epitaxial layer increases compared to the case where no Ge atoms are added.
そしてこの格子定数をマグネシャスピネル層の絶縁膜の
格子定数に近づけることで、マグネシャスピネル層から
の応力がＳｉエピタキシャル層に掛からないようになる
と共にＳｉとＧｅとの混晶が形成されることでＳｉエピ
タキシャル層の転位密度が従来の方法で形成した場合に
比較して１桁低下したＳｉエピタキシャル層が得られた
。By making this lattice constant close to the lattice constant of the insulating film of the magnetic spinel layer, stress from the magnetic spinel layer is not applied to the Si epitaxial layer, and a mixed crystal of Si and Ge is formed. A Si epitaxial layer was obtained in which the dislocation density of the Si epitaxial layer was lowered by one order of magnitude compared to the case where the Si epitaxial layer was formed by the conventional method.
尚、本実施例ではＳｉエピタキシャル層に添加すべき■
族不純物原子としてＧｅを用いたが、その他反応管内に
メタンガス、或いは四塩化炭素ガスを導入してそのガス
の熱分解により、形成されるＳｉエピタキシャル層内に
炭素（Ｃ）原子を添加しても良い。In addition, in this example, ■ to be added to the Si epitaxial layer
Although Ge was used as the group impurity atom, carbon (C) atoms may also be added to the Si epitaxial layer formed by introducing methane gas or carbon tetrachloride gas into the reaction tube and thermally decomposing the gas. good.
この炭素原子を添加した時には、形成されるＳｔのエピ
タキシャル層の格子定数が低下する傾向がある。When these carbon atoms are added, the lattice constant of the formed St epitaxial layer tends to decrease.
以上述べたように、本発明の半導体素子形成用基板の製
造方法によれば、形成されるＳＯＩ基板のＳｉエピタキ
シャル層が低転位の結晶として得られ、このようなＳＯ
１基板を用いて半導体装置を形成すれば、高信頬度の半
導体装置が得られる効果がある。As described above, according to the method of manufacturing a substrate for forming a semiconductor element of the present invention, the Si epitaxial layer of the SOI substrate to be formed can be obtained as a low-dislocation crystal.
If a semiconductor device is formed using one substrate, a semiconductor device with high reliability can be obtained.
第１図は本発明の方法で形成した半導体素子形成用基板
の断面図、
第２図は本発明の方法に用いる装置の模式図、第３図は
従来の方法で形成した半導体素子形成用基板の断面図で
ある。
図に於いて、
１１はＳｉ基板、１２はマグネシャスピネル層、１３は
Ｇｅを添加したＳｉエピタキシャル層、１４は反応管、
１５はサセプタ、１６．１９はバルブ、１７はコイル、
１８は蒸発器を示す。Fig. 1 is a cross-sectional view of a substrate for forming semiconductor elements formed by the method of the present invention, Fig. 2 is a schematic diagram of an apparatus used in the method of the invention, and Fig. 3 is a substrate for forming semiconductor elements formed by the conventional method. FIG. In the figure, 11 is a Si substrate, 12 is a magnetic spinel layer, 13 is a Ge-doped Si epitaxial layer, 14 is a reaction tube,
15 is a susceptor, 16.19 is a valve, 17 is a coil,
18 indicates an evaporator.
Claims (1)
１２）上に単結晶シリコン層（１３）をエピタキシャル
成長する方法に於いて、 前記エピタキシャル成長するシリコン層（１３）中にI
V族原子を５×１０＾２＾０／ｃｍ＾３以上の濃度で添
加したことを特徴とする半導体素子形成用基板の製造方
法。[Claims] After forming an insulating film (12) on a substrate (11), the insulating film (
12) In the method of epitaxially growing a single crystal silicon layer (13) on the epitaxially grown silicon layer (13), I
A method for manufacturing a substrate for forming a semiconductor device, characterized in that group V atoms are added at a concentration of 5×10^2^0/cm^3 or more.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23596186A JPS6390152A (en) | 1986-10-02 | 1986-10-02 | Manufacture of substrate for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23596186A JPS6390152A (en) | 1986-10-02 | 1986-10-02 | Manufacture of substrate for semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6390152A true JPS6390152A (en) | 1988-04-21 |
Family
ID=16993777
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23596186A Pending JPS6390152A (en) | 1986-10-02 | 1986-10-02 | Manufacture of substrate for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6390152A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05226247A (en) * | 1991-10-08 | 1993-09-03 | Internatl Business Mach Corp <Ibm> | Epitaxial silicon film |
-
1986
- 1986-10-02 JP JP23596186A patent/JPS6390152A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05226247A (en) * | 1991-10-08 | 1993-09-03 | Internatl Business Mach Corp <Ibm> | Epitaxial silicon film |
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