JPS6389700U - - Google Patents

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Publication number
JPS6389700U
JPS6389700U JP18373886U JP18373886U JPS6389700U JP S6389700 U JPS6389700 U JP S6389700U JP 18373886 U JP18373886 U JP 18373886U JP 18373886 U JP18373886 U JP 18373886U JP S6389700 U JPS6389700 U JP S6389700U
Authority
JP
Japan
Prior art keywords
thin film
insulating film
sio
elements
utility
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18373886U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP18373886U priority Critical patent/JPS6389700U/ja
Publication of JPS6389700U publication Critical patent/JPS6389700U/ja
Pending legal-status Critical Current

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Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案の一実施例の混合絶縁膜の比誘
電率、絶縁破壊電界強度、及び性能指数と、Ta
の組成との関係線図、第2図は本考案の一
実施例の、薄膜EL素子の断面構造図、第3図は
第2図のEL素子に於て、第2絶縁層8に本考案
の混合絶縁膜を用いた場合の素子特性とTa
の組成との関係線図である。 5……透明電極、6……第1絶縁層、7……発
光層、9……背面電極。
Figure 1 shows the relative dielectric constant, dielectric breakdown field strength, and figure of merit of a mixed insulating film according to an embodiment of the present invention, and Ta
FIG . 2 is a cross-sectional structural diagram of a thin film EL device according to an embodiment of the present invention. FIG. Device characteristics and Ta 2 O when using the mixed insulating film of the present invention
5 is a relationship diagram with the composition of No. 5 . 5...Transparent electrode, 6...First insulating layer, 7...Light emitting layer, 9...Back electrode.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 薄膜EL素子或いは各種薄膜デバイスに用いら
れ、薄膜の手法により作製される絶縁膜で、Ta
と、SiOとの混合組成から成ることを
特徴とする絶縁膜。
An insulating film manufactured by thin film techniques that is used in thin film EL elements or various thin film devices.
An insulating film comprising a mixed composition of 2 O 5 and SiO 2 .
JP18373886U 1986-12-01 1986-12-01 Pending JPS6389700U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18373886U JPS6389700U (en) 1986-12-01 1986-12-01

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18373886U JPS6389700U (en) 1986-12-01 1986-12-01

Publications (1)

Publication Number Publication Date
JPS6389700U true JPS6389700U (en) 1988-06-10

Family

ID=31130754

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18373886U Pending JPS6389700U (en) 1986-12-01 1986-12-01

Country Status (1)

Country Link
JP (1) JPS6389700U (en)

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