JPS6387515A - Gas burner - Google Patents
Gas burnerInfo
- Publication number
- JPS6387515A JPS6387515A JP23130386A JP23130386A JPS6387515A JP S6387515 A JPS6387515 A JP S6387515A JP 23130386 A JP23130386 A JP 23130386A JP 23130386 A JP23130386 A JP 23130386A JP S6387515 A JPS6387515 A JP S6387515A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- pipe
- oxygen
- oxygen gas
- flame
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims abstract description 39
- 229910001882 dioxygen Inorganic materials 0.000 claims abstract description 39
- 239000007789 gas Substances 0.000 claims abstract description 36
- 239000002737 fuel gas Substances 0.000 claims abstract description 16
- 238000002347 injection Methods 0.000 claims description 7
- 239000007924 injection Substances 0.000 claims description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 19
- 239000004065 semiconductor Substances 0.000 abstract description 15
- 238000006243 chemical reaction Methods 0.000 abstract description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 7
- 239000001301 oxygen Substances 0.000 abstract description 7
- 229910052760 oxygen Inorganic materials 0.000 abstract description 7
- 238000010438 heat treatment Methods 0.000 abstract description 6
- 235000012431 wafers Nutrition 0.000 description 12
- 238000009792 diffusion process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000002485 combustion reaction Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000007664 blowing Methods 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Pre-Mixing And Non-Premixing Gas Burner (AREA)
Abstract
Description
【発明の詳細な説明】
イ６発明の目的
〈産業上の利用分野〉
本発明はガスバーナーに係り、更に詳しくは、半導体ウ
ェハ等の被加熱物を均一に加熱することが必要とされる
反応炉に使用されるガスバーナーに関する。Detailed Description of the Invention A6 Object of the Invention (Field of Industrial Application) The present invention relates to a gas burner, and more specifically, to a gas burner, and more particularly, to a gas burner for a reaction that requires uniform heating of an object to be heated such as a semiconductor wafer. Regarding gas burners used in furnaces.
〈従来技術及びそのＩＦａｍ点〉
ガスバーナーは安全性の面から一般に火炎が安定してい
ることが望ましいが、例えば、半導体製造工程で用いら
れる反応炉内のガスバーナーのように、被加熱物を均一
に加熱することが重要である場合には、火炎の安定性が
特に要求される。<Prior art and its IFam points> It is generally desirable for a gas burner to have a stable flame from the viewpoint of safety, but for example, a gas burner in a reactor used in a semiconductor manufacturing process Flame stability is particularly required when uniform heating is important.
第４図および第５図に従来のガスバーナー（１）の−例
を示す。An example of a conventional gas burner (1) is shown in FIGS. 4 and 5.
このようなガスバーナー（１）は半導体ウェハを加熱す
る反応炉（２）の底部（２Ａ）に設けられ、水素ガス噴
出管（３）及び酸素ガス噴出管（５）は同心二重管構造
で構成される。ここで、酸素ガスを酸素ガス噴出？！（
５）内にう入づる酸素ガス導入管（７）が酸素ガス噴出
管（５）より突設されるが、上記酸素導入！！（７）は
、水素ガス噴出！！（３）の中心を通る半径方向に沿っ
て外方に向かって突設されるため、尋人される酸素ガス
の流れの中に水素ガス噴出管（３）が存在し、この水素
ガス噴出管（３）に酸素ガスが引突することにより酸素
ガスの流れが乱れる。従って酸素ガス流は乱れたまま上
昇し、水素ガス噴出管（５）の解放端近傍に遼する。こ
のガス流の乱れが火炎を揺らし、火炎上方にＲｕされた
半導体つ１ハ等の被加熱物の均一な加熱を不可能にする
。Such a gas burner (1) is installed at the bottom (2A) of a reactor (2) for heating semiconductor wafers, and the hydrogen gas jetting pipe (3) and oxygen gas jetting pipe (5) have a concentric double pipe structure. configured. Here, oxygen gas is spewed out? ! (
5) The oxygen gas introduction pipe (7) inserted into the interior projects from the oxygen gas ejection pipe (5), but the above-mentioned oxygen introduction! ! (7) is hydrogen gas blowing out! ! (3), which protrudes outward along the radial direction passing through the center of the hydrogen gas ejection pipe (3), so that the hydrogen gas ejection pipe (3) exists in the flow of oxygen gas, and this hydrogen gas ejection pipe (3) The flow of oxygen gas is disturbed by the collision of the oxygen gas with the gas. Therefore, the oxygen gas flow rises in a turbulent state and reaches the vicinity of the open end of the hydrogen gas injection pipe (5). This turbulence in the gas flow causes the flame to waver, making it impossible to uniformly heat the object to be heated, such as a semiconductor chip, which is coated above the flame.
故にこのようなガスバーナーを半導体装置製造工程にお
ける反応炉に用いるときは、均一特性に優れた手樽体菰
冒を劃Ｉることが困難であった。Therefore, when such a gas burner is used in a reactor in a semiconductor device manufacturing process, it is difficult to obtain a gas burner with excellent uniform characteristics.
以上から本発明の目的は、火炎の安定したガスバーナー
を提供することである。From the above, an object of the present invention is to provide a gas burner with stable flame.
０、発明の構成
〈問題点を解決する手段〉
前記問題点を解決する為、本発明は、燃料ガスを噴出す
る燃料ガス噴出口を有する燃料ガス噴出管と、燃料ガス
噴出口の周囲から酸素ガスを噴出する酸素ガス噴出口を
有づる酸素ガス噴出管と、を備えたガスバーナーにおい
て、上記酸素ガス噴出管内に酸素ガスを導入する！！！
２索ガス導入菅を、上記燃料ガス噴出管の回りを旋回す
るガス気流を形成する方向に向Ｉノることにより、燃料
ガスの噴出する方向が特定の向きに偏ることのないよう
にしている。0. Structure of the Invention <Means for Solving the Problems> In order to solve the above-mentioned problems, the present invention provides a fuel gas jetting pipe having a fuel gas jetting port for spouting fuel gas, and a fuel gas jetting pipe having a fuel gas spouting port that spouts out fuel gas, and a fuel gas jetting pipe that supplies oxygen from around the fuel gas jetting port. In a gas burner equipped with an oxygen gas ejection pipe having an oxygen gas ejection port for ejecting gas, oxygen gas is introduced into the oxygen gas ejection pipe! ! !
By oriented the two cable gas introduction pipes in a direction that forms a gas airflow swirling around the fuel gas ejection pipe, the direction in which the fuel gas is ejected is prevented from being biased toward a specific direction. .
〈実施例〉
以下、本発明を半導体ウェハ加熱用の反応炉内に設けら
れるガスバーナーに適用した実施例を第１図乃至第３図
に基づいて詳細に説明する。<Example> Hereinafter, an example in which the present invention is applied to a gas burner provided in a reaction furnace for heating semiconductor wafers will be described in detail with reference to FIGS. 1 to 3.
第１図は半導体ウェハを収納した縦型拡散反応炉（２１
）の概略図を示す。石英ガラスで囲まれた反応室（２３
）内にはウェハボート（２５）に保持された半導体ウェ
ハ（２７）が収納され、反応室上部より出し入れされる
。ウェハの下方には本発明の適用されるガスバーナー（
１０１）が設置され、このガスバーナー（１０コ）を用
い燃焼反応により反応室内を加熱している。Figure 1 shows a vertical diffusion reactor (21
) is shown. Reaction chamber surrounded by quartz glass (23
) A semiconductor wafer (27) held in a wafer boat (25) is housed in the wafer boat (25), and is taken in and out from the upper part of the reaction chamber. A gas burner (to which the present invention is applied) is located below the wafer.
101) is installed, and the inside of the reaction chamber is heated by combustion reaction using these gas burners (10 burners).
第２図は第１図の反応炉（２１）において、本願発明の
適用されるガスバーナー（１０１）の設置される底部の
拡大図を示す。FIG. 2 shows an enlarged view of the bottom of the reactor (21) shown in FIG. 1, where the gas burner (101) to which the present invention is applied is installed.
また第３図は第２図のガスバーナ（１０１）を■−■線
に沿って切った矢視断面図を示す。Further, FIG. 3 shows a cross-sectional view of the gas burner (101) shown in FIG. 2 taken along the line ■-■.
図中、第４図及び第５図と同一の参照番号を示す部分は
従来技術の対応する部分と同様に構成されている。 参
照番号（１０１）で示す本願発明を適用したガスバーナ
ーは、水素ガス噴出管（３）を内管に、また酸素ガス噴
出管〈５）を外管とした同心二重管構造を存し、酸素ガ
ス噴出管（５）は反応全底部の周囲と一体的に形成され
ている。In the figure, parts having the same reference numerals as in FIGS. 4 and 5 are constructed in the same manner as corresponding parts in the prior art. The gas burner to which the present invention is applied, indicated by the reference number (101), has a concentric double pipe structure with a hydrogen gas ejection pipe (3) as an inner pipe and an oxygen gas ejection pipe (5) as an outer pipe, The oxygen gas jetting pipe (5) is formed integrally with the periphery of the entire bottom of the reaction.
これらの！（３，５＞は、石英ガラス等の耐熱材料で作
られる。酸素ガス噴出管（５）には、酸素ガス導入管（
１０７）が突設され、他端側より酸素ガスが導入される
。ここで、従来通り酸素ガスは、酸素ガス導入管により
導入されるが、導入管（１０７）は、導入される酸素ガ
ス流が水素ガス噴出管（３）の外壁と衝突することのな
いような方向、好ましくは、第３図に示すごと＜ｍ素ガ
ス噴出管（５）の内！で構成する円形の接線方向に突設
される。一方、水素は、水素ガス噴出費（３）の図中下
端の他端から導入される。these! (3, 5> are made of a heat-resistant material such as quartz glass.The oxygen gas injection pipe (5) has an oxygen gas introduction pipe (
107) is provided in a protruding manner, and oxygen gas is introduced from the other end. Here, as in the past, oxygen gas is introduced through an oxygen gas introduction pipe, but the introduction pipe (107) is designed to prevent the introduced oxygen gas flow from colliding with the outer wall of the hydrogen gas ejection pipe (3). The direction is preferably <m of the elementary gas ejection pipe (5) as shown in FIG. 3! It protrudes in the tangential direction of the circular shape. On the other hand, hydrogen is introduced from the other end of the lower end of the hydrogen gas jet (3) in the figure.
酸素ガス尋人？！（１０７）より導入された酸素は、酸
素ガス噴出管（５）の内壁に沿って旋回流路を形成しな
がら上昇し、水素ガス噴出管（３）の＠ｔ！ｉ端付近に
達するａｌｌＩ素１ま、水素ガス噴出管（３）の解放端
より噴出する水素と混合され、燃焼反応を起こすことで
火炎上方の半導体ウェハを加熱する。また、反応室内の
対流により半導体つＩハを均一に加熱する。Oxygen gas Hirojin? ! The oxygen introduced from (107) rises while forming a swirling flow path along the inner wall of the oxygen gas ejection pipe (5), and rises to @t! of the hydrogen gas ejection pipe (3). The all I element 1 reaching near the i-end is mixed with hydrogen ejected from the open end of the hydrogen gas ejection tube (3), causing a combustion reaction and heating the semiconductor wafer above the flame. Further, the semiconductor substrate is uniformly heated by convection within the reaction chamber.
従って、半導体ウェハは、不純物拡散など半導体装置の
製造上不可欠な処理が行われることとなる。Therefore, semiconductor wafers undergo processes essential for manufacturing semiconductor devices, such as impurity diffusion.
く作用〉
本願発明を適用したガスバーナー（１０１）の酸素ガス
導入管（１０７）は、水素ガス噴出管（３）の外壁に衝
突することなく、その回りを旋回するガス気流を形成す
る方向に向けられて突設されているため、酸素ガス流は
水素ガス噴出管（３）に衝突することなく酸素ガス噴出
管（５）の内壁に案内されながら旋回して上界する。従
って、酸素ガス流は乱れることなく水素ガス噴出管（３
）の解放端近傍に遼つするため、火炎を揺らすことがな
く、また酸素ガス噴出管（５）の内壁に沿って形成され
た旋回流路により火炎をつつみこむように事実上の壁を
作り、反応室内の対流による火炎の揺れも発生を防ぐと
いう効果がある。Effect> The oxygen gas introduction pipe (107) of the gas burner (101) to which the present invention is applied is directed in the direction of forming a gas flow that swirls around the outer wall of the hydrogen gas ejection pipe (3) without colliding with it. Since the oxygen gas flow is directed and protrudes, the oxygen gas flow swirls and ascends while being guided by the inner wall of the oxygen gas jet pipe (5) without colliding with the hydrogen gas jet pipe (3). Therefore, the oxygen gas flow is undisturbed and the hydrogen gas jet pipe (3
), the flame does not waver, and the swirling flow path formed along the inner wall of the oxygen gas jetting tube (5) creates a virtual wall that encloses the flame. Flame shaking caused by convection within the reaction chamber also has the effect of preventing flame generation.
その結果、火炎上方に配置された半導体ウェハを効率よ
く且つ均一に加熱することが可能になる。As a result, it becomes possible to efficiently and uniformly heat the semiconductor wafer placed above the flame.
尚、前述では本発明が半導体ウェハの処理装置に適用さ
れる場合を説明してきたが、本発明が適用されるのは、
半導体ウェハの処理に限られず、他の被加熱物であって
もよい。Although the present invention has been described above as being applied to a semiconductor wafer processing apparatus, the present invention is applicable to:
The process is not limited to processing semiconductor wafers, but may be other objects to be heated.
ハ１発明の効果
以上、酸素ガス流が酸素ガス噴出管（５）の内壁に沿っ
て旋回流路を形成するような方向に酸素ガス導入管を配
置することにより、火炎の揺動することのないガスバー
ナーを提供することができる。C1 Effects of the invention In addition to the effects of the invention, by arranging the oxygen gas introduction pipe in a direction such that the oxygen gas flow forms a swirling flow path along the inner wall of the oxygen gas injection pipe (5), swinging of the flame can be prevented. No gas burner can be provided.
第１図は、本発明によるガスバーナーが縦型拡散反応炉
に用いられた一実施例の全体構成を示す断面図、第２図
は、前記実施例の要部を拡大して示す断面図、第３図は
第２図のト（線に沿った矢視断面図、第４図は従来技術
のガスバーナーの断面図、第５図は第４図のＶ−Ｖａに
沿った矢視断面図である。
１．１０１： ガスバーナー
２．２Ａ： 反応室
３： 水素ガス噴出管
５： Ｗ１素ガス噴出管
７．１０７： ＩＩ！素ガス導入管
−県゛ ユ 図
ヌ ９！ 固
ヌ ３ ｍFIG. 1 is a cross-sectional view showing the overall configuration of an embodiment in which a gas burner according to the present invention is used in a vertical diffusion reactor, and FIG. 2 is a cross-sectional view showing an enlarged main part of the embodiment. Fig. 3 is a sectional view taken along the line V-Va in Fig. 2, Fig. 4 is a sectional view of a conventional gas burner, and Fig. 5 is a sectional view taken along the line V-Va in Fig. 4. 1.101: Gas burner 2.2A: Reaction chamber 3: Hydrogen gas injection pipe 5: W1 elementary gas injection pipe 7.107: II! Elementary gas introduction pipe - Prefecture Figure 9 9! Solid 3 m
Claims (1)
出管と、 燃料ガス噴出口の周囲から酸素ガスを噴出する酸素ガス
噴出口を有する酸素ガス噴出管と、を備えたガスバーナ
ーにおいて、 上記酸素ガス噴出管内に酸素ガスを導入する酸素ガス導
入管が、上記燃料ガス噴出管の回りを旋回するガス気流
を形成する方向に向けられていることを特徴とするガス
バーナー。[Scope of Claims] A fuel gas ejection pipe having a fuel gas ejection port for ejecting fuel gas, and an oxygen gas ejection pipe having an oxygen gas ejection port for ejecting oxygen gas from around the fuel gas ejection port. A gas burner, characterized in that an oxygen gas introduction pipe that introduces oxygen gas into the oxygen gas injection pipe is oriented in a direction that forms a gas stream swirling around the fuel gas injection pipe.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23130386A JPS6387515A (en) | 1986-10-01 | 1986-10-01 | Gas burner |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23130386A JPS6387515A (en) | 1986-10-01 | 1986-10-01 | Gas burner |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6387515A true JPS6387515A (en) | 1988-04-18 |
Family
ID=16921508
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23130386A Pending JPS6387515A (en) | 1986-10-01 | 1986-10-01 | Gas burner |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6387515A (en) |
-
1986
- 1986-10-01 JP JP23130386A patent/JPS6387515A/en active Pending
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