JPS6386127A - Production of optical information-recording medium - Google Patents
Production of optical information-recording mediumInfo
- Publication number
- JPS6386127A JPS6386127A JP61231712A JP23171286A JPS6386127A JP S6386127 A JPS6386127 A JP S6386127A JP 61231712 A JP61231712 A JP 61231712A JP 23171286 A JP23171286 A JP 23171286A JP S6386127 A JPS6386127 A JP S6386127A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- sputtering
- optical information
- recording medium
- recording film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 20
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 238000004544 sputter deposition Methods 0.000 claims abstract description 22
- 229910052714 tellurium Inorganic materials 0.000 claims abstract description 13
- 239000004215 Carbon black (E152) Substances 0.000 claims abstract description 10
- 229930195733 hydrocarbon Natural products 0.000 claims abstract description 10
- 150000002430 hydrocarbons Chemical class 0.000 claims abstract description 10
- 229910052711 selenium Inorganic materials 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 13
- 229910001370 Se alloy Inorganic materials 0.000 claims description 3
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims 1
- 229910052753 mercury Inorganic materials 0.000 claims 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 abstract description 6
- 239000002184 metal Substances 0.000 abstract 1
- 150000003498 tellurium compounds Chemical class 0.000 description 8
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 150000002902 organometallic compounds Chemical class 0.000 description 4
- 239000011669 selenium Substances 0.000 description 4
- YMUZFVVKDBZHGP-UHFFFAOYSA-N dimethyl telluride Chemical compound C[Te]C YMUZFVVKDBZHGP-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- ILXWFJOFKUNZJA-UHFFFAOYSA-N ethyltellanylethane Chemical compound CC[Te]CC ILXWFJOFKUNZJA-UHFFFAOYSA-N 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- -1 methyl ethyl tellurium Chemical compound 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229940065287 selenium compound Drugs 0.000 description 1
- 150000003343 selenium compounds Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［発明の目的］
（産業上の利用分野）
本発明はＴｅ、３ｅ又はＴｅ−８ｅを記録膜とする合金
光情報記録媒体の製造方法の改良に関する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to an improvement in a method for manufacturing an alloy optical information recording medium using Te, 3e or Te-8e as a recording film.
（従来の技術）
光情報記録媒体としては、例えば基板上に記録膜として
Ｔｅ、Ｓｅ又はＴｅ−８ｅ合金を形成したものが知られ
ている。記録膜となるＴｅ１Ｓｅ又はＴｅ−８ｅ合金に
は半導体レーザ光によって情報の書込みができる。この
ような光情報記録媒体は、真空容器内に基板を装入し、
例えば炭化水素ガス雰囲気中でＴｅ、Ｓｅ又はＴｅ−８
ｅ合金をスパッタして前記基板上に記録膜を積層するこ
とにより製造されている。(Prior Art) As an optical information recording medium, for example, one in which Te, Se or Te-8e alloy is formed as a recording film on a substrate is known. Information can be written on the Te1Se or Te-8e alloy that serves as the recording film using semiconductor laser light. Such optical information recording media are produced by placing a substrate in a vacuum container,
For example, Te, Se or Te-8 in a hydrocarbon gas atmosphere
It is manufactured by sputtering e-alloy and laminating a recording film on the substrate.
上述した製造方法で例えばターゲットとしてＴｅ、炭化
水素ガスとしてＣＨ４を用いた場合、スパッタ条件が激
しすぎたりして不適当であるとジメチルテルルＣＨ３−
Ｔｅ−ＣＨ３のような有機テルル化合物が生成する可能
性がある。こうした有機テルル化合物は極微量ながら記
録膜中に取込まれたり、記録膜表面に油滴状となって残
存する。このため、記録膜の表面が凹凸になり、記録膜
の光学特性が不均一になる。また、有機テルル化合物は
空気中にさらされると酸化されるため、記録膜の安定性
にも悪影響がある。ところが、従来は生成した有機テル
ル化合物を有効に分解する手段が知られていなかった。In the above manufacturing method, for example, when Te is used as the target and CH4 is used as the hydrocarbon gas, if the sputtering conditions are too harsh or unsuitable, dimethyltellurium CH3-
Organotellurium compounds such as Te-CH3 may be produced. Such organic tellurium compounds are incorporated into the recording film in very small amounts or remain in the form of oil droplets on the surface of the recording film. As a result, the surface of the recording film becomes uneven and the optical properties of the recording film become non-uniform. Furthermore, since organic tellurium compounds are oxidized when exposed to air, the stability of the recording film is also adversely affected. However, until now, there has been no known means for effectively decomposing the produced organic tellurium compounds.
このため、比較的穏やかなスパッタ条件を選択して有機
テルル化合物が生成しないようにしており、スパッタ条
件が制限され、しかも生産性が低いという問題があった
。For this reason, relatively mild sputtering conditions are selected to prevent the formation of organic tellurium compounds, which has the problem of limiting sputtering conditions and low productivity.
（発明が解決しようとする問題点）
本発明は上記問題点を解決するためになされたものであ
り、スパッタ条件がそれほど制限されることなくスパッ
タ時に生成する有機金属化合物を分解することができ、
光学特性が均一で、安定性の良好な記録膜を有する光情
報記録媒体を高い生産性で製造することができる方法を
提供することを目的とする。(Problems to be Solved by the Invention) The present invention has been made to solve the above-mentioned problems, and it is possible to decompose organometallic compounds generated during sputtering without limiting the sputtering conditions so much.
It is an object of the present invention to provide a method capable of manufacturing with high productivity an optical information recording medium having a recording film with uniform optical properties and good stability.
［発明の構成］
（問題点を解決するための手段）
本発明の光記録媒体のＩｌｌｌｌ決方法真空容器内に基
板を装入し、炭化水素ガス雰囲気中でＴｅ１Ｓｅ又はＴ
ｅ−Ｓｅ合金をスパッタして前記基板上に記録膜を積層
して光情報記録媒体を製造するにあたり、前記基板に平
行に波長３００ｎｍ以下の光を照射することを特徴とす
るものである。[Structure of the Invention] (Means for Solving the Problems) A method for producing an optical recording medium of the present invention: A substrate is placed in a vacuum container, and Te1Se or T is heated in a hydrocarbon gas atmosphere.
When producing an optical information recording medium by sputtering an e-Se alloy and laminating a recording film on the substrate, the method is characterized in that light with a wavelength of 300 nm or less is irradiated parallel to the substrate.
（作用） ゛
上述した本発明方法によれば、スパッタ時に生成するジ
メチルテルル、ジエチルテルル、メチルエチルテルルの
ような有機テルル化合物あるいは各種有機セレン化合物
等の有機金属化合物は、波長３００ｎｍ以下の電磁波を
照射することにより分解してＴｅ、Ｓｅ等となる。した
がって、記録膜に有機金属化合物が取込まれることがな
く、記録膜の光学特性を均一化し、その安定性を向上す
ることができる。(Function) According to the method of the present invention described above, organic tellurium compounds such as dimethyl tellurium, diethyl tellurium, and methyl ethyl tellurium or organic metal compounds such as various organic selenium compounds generated during sputtering do not emit electromagnetic waves with a wavelength of 300 nm or less. Upon irradiation, it decomposes into Te, Se, etc. Therefore, the organometallic compound is not incorporated into the recording film, and the optical properties of the recording film can be made uniform and its stability can be improved.
本発明において、光の波長を３００ｎｍ以下としたのは
、３００ｎｍを超える波長の光では有機金属化合物を分
解する効果が小さいためである。In the present invention, the wavelength of light is set to 300 nm or less because light with a wavelength exceeding 300 nm has a small effect of decomposing the organometallic compound.
より好ましくは波長２６０ｎｍ以下の光を用いるのがよ
い。More preferably, light with a wavelength of 260 nm or less is used.
（実施例） 以下、本発明の実施例を図面を参照して説明する。(Example) Embodiments of the present invention will be described below with reference to the drawings.
第１図は本発明方法を実施するためのスパッタ装置の構
成図である。第１図において、真空チャンバー１内には
基板回転子２が挿入され、この基板回転子２に基板３が
装着される。また、真空チャンバー１には基板３に対向
するようにテルルターゲット４が設けられており、この
テルルターゲット４には直流ＩＩ源５が接続されている
。また、真空チャンバー１には排気口６が設けられ、一
方真空チャンバー１内へ炭化水素ガスを導入するための
ガス導入管６が接続されておりバルブ７によってガス流
量を調節できるようになっている。更に、真空チャンバ
ー１には前記基板３の表面に対応する位置に、互いに対
向するように１対の石英窓９ｔ 、９２が設けられてい
る。そして、真空チャンバー１の外部にはエキシマレー
ザ（例えば発振波長１９３ｎｍのＡｒＦレーザ）１０、
ミラー１１、レンズ１２が設けられている。これらはエ
キシマレーザ１０から照射されるエキシマレーザ光１３
がミラー１１で反射され、レンズ１２を通過して一方の
石英窓９１から真空チャンバー１内へ入り、基板３の表
面に平行に進行して他方の石英窓９２から外部へ出るよ
うに配置されている。FIG. 1 is a block diagram of a sputtering apparatus for carrying out the method of the present invention. In FIG. 1, a substrate rotor 2 is inserted into a vacuum chamber 1, and a substrate 3 is mounted on this substrate rotor 2. Further, a tellurium target 4 is provided in the vacuum chamber 1 so as to face the substrate 3, and a direct current II source 5 is connected to the tellurium target 4. Further, the vacuum chamber 1 is provided with an exhaust port 6, and on the other hand, a gas introduction pipe 6 for introducing hydrocarbon gas into the vacuum chamber 1 is connected, and the gas flow rate can be adjusted by a valve 7. . Furthermore, a pair of quartz windows 9t and 92 are provided in the vacuum chamber 1 at positions corresponding to the surface of the substrate 3 so as to face each other. Externally, the vacuum chamber 1 includes an excimer laser (for example, an ArF laser with an oscillation wavelength of 193 nm) 10,
A mirror 11 and a lens 12 are provided. These are excimer laser beams 13 irradiated from the excimer laser 10.
is reflected by the mirror 11, passes through the lens 12, enters the vacuum chamber 1 through one quartz window 91, travels parallel to the surface of the substrate 3, and exits from the other quartz window 92. There is.
上記装置を用い、以下のようにして基板上にＴｅ１ｌ！
を形成する。まず、基板回転子２にガラス、ポリメチル
メタクリレート、ポリカーボネート等からなる基板３を
装着した後、排気口６から排気して真空チャンバー１内
を−ＨＩ Ｘ １０’ Ｔｏｒｒにする。次に、バルブ
８を開けてガス導入管７から真空チャンバー１内へメタ
ンガスを導入し、図示しない電離真空計で観測される圧
力が ４×１０’ＴＯｒｒとなるようにメタンガスの８
ｉ量を調節し、この状態を５分間維持する。つづいて、
基板回転子２により基板３を６０ ｒｐｍの回転数で回
転させながら、テルルターゲット４が陰極となるように
直流電源５から１５０Ｗの電力を供給してスパッタを開
始する。これと同時にエキシマレーザ１０からのエキシ
マレーザ光１３を基板３の表面と平行に照射する。なお
、スパッタ時に基板３を加熱する必要はなく、常温でよ
い。また、エキシマレーザ１３は基板３表面から５ｃＩ
Ｒ以内の距離を隔てて通過するようにし、できるだけ基
板表面に近い方がよい。Using the above apparatus, Te1l! is printed on the substrate as follows.
form. First, after mounting the substrate 3 made of glass, polymethyl methacrylate, polycarbonate, etc. on the substrate rotor 2, the vacuum chamber 1 is evacuated from the exhaust port 6 to bring the inside of the vacuum chamber 1 to -HI x 10' Torr. Next, open the valve 8 and introduce methane gas into the vacuum chamber 1 from the gas introduction pipe 7, and adjust the methane gas so that the pressure observed with an ionization vacuum gauge (not shown) becomes 4 x 10' TOrr.
Adjust the amount and maintain this state for 5 minutes. Continuing,
While the substrate 3 is being rotated by the substrate rotor 2 at a rotation speed of 60 rpm, sputtering is started by supplying power of 150 W from the DC power source 5 so that the tellurium target 4 serves as a cathode. At the same time, excimer laser light 13 from excimer laser 10 is irradiated parallel to the surface of substrate 3. Note that there is no need to heat the substrate 3 during sputtering, and the substrate 3 may be heated at room temperature. Moreover, the excimer laser 13 is 5 cI from the surface of the substrate 3.
It is better to pass it at a distance within R and as close to the substrate surface as possible.
このような方法によれば、スパッタ中にジメチルテルル
のような有機テルル化合物が生成したとしても、ＡｒＦ
レーザ光のエネルギーにより分解することができる。そ
して、その分解生成物であるＴｅはそのまま基板上に堆
積して記録膜どなる。According to such a method, even if an organic tellurium compound such as dimethyl tellurium is generated during sputtering, ArF
It can be decomposed by the energy of laser light. Then, Te, which is a decomposition product, is directly deposited on the substrate and becomes a recording film.
したがって、記録膜に有機テルル化合物が取込まれるこ
とがなく、記録膜の光学特性を均一化し、その安定性を
向上することができる。また、スパッタ条件の選択の範
囲が広くなり、比較釣機しい条件を用いることにより記
録膜の生産性を向上することもできる。また、例えばス
パッタ開始後、スパッタ条件が安定するまでの過渡的な
条件下で数分間程度の限られた時間だけ有機テルル化合
物が生成するような場合には、レーザ光はパルス発搬さ
せているため、その時間だけ真空チャンバー内に導入す
ることができエネルギーのロスがない。Therefore, the organic tellurium compound is not incorporated into the recording film, and the optical properties of the recording film can be made uniform and its stability can be improved. Furthermore, the range of sputtering conditions that can be selected is widened, and the productivity of the recording film can be improved by using relatively favorable conditions. In addition, for example, when an organic tellurium compound is generated for a limited period of several minutes under transient conditions until the sputtering conditions stabilize after sputtering starts, the laser beam is emitted in pulses. Therefore, it can be introduced into the vacuum chamber for only that amount of time, and there is no loss of energy.
更に、光のビームスポットは理論的には波長の大きさま
で絞り込めるため、単位面積当りの照射エネルギーを自
由に変化させることができる。Furthermore, since the light beam spot can theoretically be narrowed down to the size of the wavelength, the irradiation energy per unit area can be changed freely.
なお、上記実施例では、ターゲットとしてＴｅ、炭化水
素ガスとしてメタンを用いた場合について説明したが、
これに限らずターゲットとしてＳｅ又はＴｅ−Ｓｅ合金
、炭化水素ガスとしてエタン、エチレン等を用いてもよ
い。また、上記実施例では光源としてエキシマレーザを
用いたが、これに限らず低圧水銀灯（主発振波長２５４
ｎｍ）を用いてもよい。In addition, in the above example, a case was explained in which Te was used as the target and methane was used as the hydrocarbon gas.
The present invention is not limited to this, and Se or a Te-Se alloy may be used as the target, and ethane, ethylene, etc. may be used as the hydrocarbon gas. In addition, although an excimer laser was used as the light source in the above embodiment, the present invention is not limited to this.
nm) may be used.
［発明の効果］
以上詳述したように本発明方法によれば、スパッタ条件
がそれほど制限されることなくスパッタ時に生成する有
機金属化合物を分解することができ、光学特性が均一で
、安定性の良好な記録膜を有する光情報記録媒体を高い
生産性で製造することができる等顕著な効果を奏するも
のである。[Effects of the Invention] As detailed above, according to the method of the present invention, it is possible to decompose organometallic compounds generated during sputtering without restricting the sputtering conditions so much, and to achieve uniform optical properties and stability. This method has remarkable effects such as being able to manufacture optical information recording media having a good recording film with high productivity.
第１図は本発明方法を実施するためのスパッタ装置の構
成図である。
１・・・真空チャンバー、３・・・基板、４・・・テル
ルターゲット、１０・・・エキシマレーザ、１３・・・
エキシマレーザ光。
出願人代理人 弁理士 鈴江武彦
第１図FIG. 1 is a block diagram of a sputtering apparatus for carrying out the method of the present invention. DESCRIPTION OF SYMBOLS 1... Vacuum chamber, 3... Substrate, 4... Tellurium target, 10... Excimer laser, 13...
Excimer laser light. Applicant's agent Patent attorney Takehiko Suzue Figure 1
Claims (4)
中でＴｅ、Ｓｅ又はＴｅ−Ｓｅ合金をスパッタして前記
基板上に記録膜を積層して光情報記録媒体を製造するに
あたり、前記基板に平行に波長３００ｎｍ以下の光を照
射することを特徴とする光情報記録媒体の製造方法。(1) In producing an optical information recording medium by placing a substrate in a vacuum container and sputtering Te, Se, or Te-Se alloy in a hydrocarbon gas atmosphere to laminate a recording film on the substrate, A method for manufacturing an optical information recording medium, characterized in that the substrate is irradiated with light having a wavelength of 300 nm or less in parallel.
を特徴とする特許請求の範囲第１項記載の光情報記録媒
体の製造方法。(2) The method for manufacturing an optical information recording medium according to claim 1, wherein the light source is a low-pressure mercury lamp or an excimer laser.
ｒＣｌ又はＸｅＢｒレーザであることを特徴とする特許
請求の範囲第２項記載の光情報記録媒体の製造方法。(3) Excimer laser is KrF, KrCl, ArF, A
3. The method for manufacturing an optical information recording medium according to claim 2, wherein an rCl or XeBr laser is used.
Ｈ＿４又はＣ＿２Ｈ＿２であることを特徴とする特許請
求の範囲第１項記載の光情報記録媒体の製造方法。(4) Hydrocarbon gas is CH_4, C_2H_5, C_2
2. The method for manufacturing an optical information recording medium according to claim 1, wherein the medium is H_4 or C_2H_2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61231712A JPS6386127A (en) | 1986-09-30 | 1986-09-30 | Production of optical information-recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61231712A JPS6386127A (en) | 1986-09-30 | 1986-09-30 | Production of optical information-recording medium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6386127A true JPS6386127A (en) | 1988-04-16 |
Family
ID=16927829
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61231712A Pending JPS6386127A (en) | 1986-09-30 | 1986-09-30 | Production of optical information-recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6386127A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1544856A3 (en) * | 2002-12-20 | 2005-11-16 | Agfa-Gevaert | Optical memory plate or panel |
-
1986
- 1986-09-30 JP JP61231712A patent/JPS6386127A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1544856A3 (en) * | 2002-12-20 | 2005-11-16 | Agfa-Gevaert | Optical memory plate or panel |
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