JPS6384940U - - Google Patents
Info
- Publication number
- JPS6384940U JPS6384940U JP18035486U JP18035486U JPS6384940U JP S6384940 U JPS6384940 U JP S6384940U JP 18035486 U JP18035486 U JP 18035486U JP 18035486 U JP18035486 U JP 18035486U JP S6384940 U JPS6384940 U JP S6384940U
- Authority
- JP
- Japan
- Prior art keywords
- post
- end surface
- electrode
- recess
- fitted
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 5
- 229910010293 ceramic material Inorganic materials 0.000 claims 1
- 238000010292 electrical insulation Methods 0.000 claims 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
Landscapes
- Die Bonding (AREA)
Description
第１図は本考案に係る半導体素子のケース構造
の一実施例を示す断面図、第２図は従来例を示す
断面図である。
１０……カソード銅ポスト、１１……有底用筒
体、１３……ゲートポスト、１４……モリブデン
電極。
FIG. 1 is a sectional view showing an embodiment of a case structure for a semiconductor device according to the present invention, and FIG. 2 is a sectional view showing a conventional example. 10... Cathode copper post, 11... Bottomed cylinder, 13... Gate post, 14... Molybdenum electrode.
Claims (1)
て半導体素子の主電極面に端面が当接されると共
に該端面に凹部が形成された主電極用ポストと、
前記凹部内に主電極用ポストとの電気的絶縁を保
持しつつ内嵌され且つ弾発部材により付勢されて
半導体素子の制御電極面中央に圧接される制御電
極用ポストを備えて成る半導体素子のケース構造
において、 前記凹部に、電気絶縁性を有するセラミツクス
素材で成る有底円筒体をその開口端面が前記主電
極用ポストの端面より突出するように嵌合、固定
すると共に、前記主電極用ポストの端面より突出
する有底円筒体の外周に前記緩衝用電極を嵌合し
たことを特徴とする半導体素子のケース構造。[Claims for Utility Model Registration] A ring-shaped buffer electrode, a main electrode post whose end surface is in contact with the main electrode surface of a semiconductor element via the buffer electrode, and a recess is formed in the end surface. ,
A semiconductor device comprising a control electrode post that is fitted into the recess while maintaining electrical insulation from the main electrode post and is urged by a resilient member to be pressed against the center of the control electrode surface of the semiconductor device. In the case structure, a bottomed cylindrical body made of an electrically insulating ceramic material is fitted and fixed in the recess so that its open end surface protrudes from the end surface of the main electrode post, and A case structure for a semiconductor device, characterized in that the buffer electrode is fitted to the outer periphery of a bottomed cylindrical body protruding from an end face of a post.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18035486U JPS6384940U (en) | 1986-11-22 | 1986-11-22 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18035486U JPS6384940U (en) | 1986-11-22 | 1986-11-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6384940U true JPS6384940U (en) | 1988-06-03 |
Family
ID=31124234
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18035486U Pending JPS6384940U (en) | 1986-11-22 | 1986-11-22 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6384940U (en) |
-
1986
- 1986-11-22 JP JP18035486U patent/JPS6384940U/ja active Pending
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