JPS6375712A - Detector element for optical fiber - Google Patents
Detector element for optical fiberInfo
- Publication number
- JPS6375712A JPS6375712A JP61219784A JP21978486A JPS6375712A JP S6375712 A JPS6375712 A JP S6375712A JP 61219784 A JP61219784 A JP 61219784A JP 21978486 A JP21978486 A JP 21978486A JP S6375712 A JPS6375712 A JP S6375712A
- Authority
- JP
- Japan
- Prior art keywords
- optical fiber
- photodetector
- forming
- face
- detection element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013307 optical fiber Substances 0.000 title claims abstract description 18
- 239000010408 film Substances 0.000 claims abstract description 9
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims abstract description 4
- 239000010409 thin film Substances 0.000 claims abstract description 4
- 238000001514 detection method Methods 0.000 claims description 12
- 230000003287 optical effect Effects 0.000 claims description 11
- 238000010521 absorption reaction Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 5
- 238000004891 communication Methods 0.000 description 3
- 238000005253 cladding Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000004308 accommodation Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔概 要〕
光ファイバ用検波器であって、光ファイバ端面にa −
SiGe膜を用いた高速光検波素子を設けたことにより
、小型化及び製作コスト低減を可能とする。[Detailed Description of the Invention] [Summary] A detector for optical fiber, which includes a -
By providing a high-speed optical detection element using a SiGe film, it is possible to reduce the size and manufacturing cost.
本発明は光通信装置等に用いられる光ファイバ用検波器
に関するものである。The present invention relates to an optical fiber detector used in optical communication devices and the like.
光通信においては、高速性、多重通信などの要求により
光応答性が早く、且つ波長帯域幅の広い光検出器が求め
られている。In optical communications, demands for high speed, multiplex communication, etc. require photodetectors with fast optical response and wide wavelength bandwidth.
従来高速(光応答性が数PS)且つ波長帯域幅の広い光
検波素子としてはa−3t膜よりバンドギャップが小さ
く、且つ欠陥密度の大きいa−SiGe (アモルファ
ス・シリコン・ゲルマウニム)膜を用い波長約1μmま
で拡張されたものがあった。Conventionally, an a-SiGe (amorphous silicon germanium) film, which has a smaller bandgap than an a-3T film and a higher defect density, has been used as a photodetector element with a high speed (photoresponsivity of several PS) and a wide wavelength bandwidth. Some were extended to about 1 μm.
上記従来の光検波素子では、光検波素子単体として作製
されるため、高価であり、且つそれを収容するスペース
を確保しなければならないという問題があった。The above-mentioned conventional optical detection element has problems in that it is expensive and a space must be secured to accommodate it because it is manufactured as a single optical detection element.
本発明はこのような点にエヒみて創作されたもので、安
価で且つ収容スペースを要しない光ファイバ用検波素子
を提供することを目的としている。The present invention was created with these points in mind, and an object of the present invention is to provide a detection element for an optical fiber that is inexpensive and does not require space for accommodation.
このため本発明においては、第1図に例示するように、
光ファイバ1の端面に光検波素子4を薄膜技術により形
成したことを特徴としている。Therefore, in the present invention, as illustrated in FIG.
It is characterized in that the optical detection element 4 is formed on the end face of the optical fiber 1 by thin film technology.
光ファイバ端面に直接薄Hり技術により光検波素子4を
形成したことにより、安価にでき、且つ収容スペースの
確保が不要となる。Since the optical detection element 4 is formed directly on the end face of the optical fiber by the thin hole drilling technique, it can be made at low cost and there is no need to secure a housing space.
第1図は本発明の実施例を示す図であり、aは正面図、
bはa図のb−b線における断面図である。FIG. 1 is a diagram showing an embodiment of the present invention, in which a is a front view;
b is a cross-sectional view taken along line bb in figure a.
本実施例は第1図に示すように、屈折率の大きいコア2
(直径数十μm)と、コアより屈折率の小さいクラッド
3 (直径100〜200μm)からなる光ファイバ1
の端面に、a −SiGe膜を用いた光検波素子4を設
けたもので、該光検波素子4は光ファイバ1の端面に5
0Ωのストリップライン5゜5′をギャップgを設けて
形成し、その上にプラズマCVD法により厚さ約100
0人のa −SiGelJ 6を形成し、さらにその上
の全面にアース電極7を形成したものである。In this embodiment, as shown in FIG. 1, a core 2 with a large refractive index
Optical fiber 1 consists of a (several tens of μm in diameter) and a cladding 3 (100 to 200 μm in diameter) with a smaller refractive index than the core.
A photodetecting element 4 using an a-SiGe film is provided on the end face of the optical fiber 1.
A 0Ω stripline 5°5′ is formed with a gap g, and a strip line with a thickness of about 100Ω is formed on it by plasma CVD.
0 a-SiGelJ 6 is formed, and a ground electrode 7 is further formed on the entire surface thereof.
このように形成された本実施例はストリップライン5,
5′の一方に数十■の電圧を印かし他方から信号を取り
出すことができる。本実施例によれば数十乃至数PSの
高速で動作することができ、また光ファイバ端面に形成
したものであるため安価に製造でき、且つ素子の収容ス
ペースも殆んど要しない。In this embodiment formed in this way, the strip line 5,
It is possible to apply a voltage of several tens of µm to one side of 5' and extract a signal from the other side. According to this embodiment, it is possible to operate at a high speed of several tens to several PS, and since it is formed on the end face of an optical fiber, it can be manufactured at low cost and requires almost no space for accommodating the element.
第2図は本発明の他の実施例を示す図であり、aは正面
図、bはa図のb−b線における断面図である。FIG. 2 is a diagram showing another embodiment of the present invention, in which a is a front view and b is a sectional view taken along line bb in FIG.
本実施例が前実施例と異なるところは、ストリップライ
ン5,5′、a−SiGe膜6、アース電極8の形成順
序が全く反対でるあることと、アース電極7が光ファイ
バlからの光を遮ぎらないようにするため該アース電極
7を透明導電膜で形成したことである。このように構成
された本実施例は前実施例と同様な作用効果を有し、さ
らにストリップライン5,5′が外部に形成されている
ため信号処理回路との配線が容易となる利点がある。This embodiment differs from the previous embodiment in that the order of formation of the strip lines 5, 5', a-SiGe film 6, and ground electrode 8 is completely reversed, and that the ground electrode 7 blocks light from the optical fiber 1. The ground electrode 7 is formed of a transparent conductive film in order to prevent it from being blocked. The present embodiment configured in this manner has the same effects as the previous embodiment, and has the advantage that since the strip lines 5 and 5' are formed externally, wiring with the signal processing circuit is easy. .
以上性べてきたように、本発明によれば、従来の光検波
器のスペース確保が不要となり、しかも製作コストの低
減ができ、実用低には摸めて有用である。As described above, according to the present invention, there is no need to secure a space for a conventional photodetector, and the manufacturing cost can be reduced, so that it is useful even in practical applications.
第1図は本発明の実施例を示す図、
第2図は本発明の他の実施例を示す図である。
第1図、第2図において、
1は光ファイバ、 2はコア、
3はクラッド、 4は光検波素子、5.5′はス
トリップライン、
6はa SiGe膜、 7はアース電極である。
(a) (b)本発明の実
施例を示す図
第1図
1 ・光ファイバ 5,5′・・ ストリップ
ライン4・・・光検波素子
(a) (b)本発明の他の実
施例を示す図
第2図
3・・ クラッド 7・・ アース電極
4・・・ 光検波素子FIG. 1 is a diagram showing an embodiment of the invention, and FIG. 2 is a diagram showing another embodiment of the invention. 1 and 2, 1 is an optical fiber, 2 is a core, 3 is a cladding, 4 is a photodetecting element, 5.5' is a strip line, 6 is an a SiGe film, and 7 is a ground electrode. (a) (b) Diagrams showing embodiments of the present invention Fig. 1 Optical fibers 5, 5'... Strip line 4... Optical detection element (a) (b) Other embodiments of the present invention Figure 2 shows Figure 3... Clad 7... Earth electrode 4... Optical detection element
Claims (1)
製膜技術により形成したことを特徴とする光ファイバ用
検波素子。 2、上記検波素子(4)は吸収端の小さいa−SiGe
膜を用い、ギャップセル構造であることを特徴とした特
許請求の範囲第1項記載の光ファイバ用検波素子。[Claims] 1. A detection element for an optical fiber, characterized in that an optical detection element (4) is formed on the end face of an optical fiber (1) by a thin film forming technique. 2. The detection element (4) is made of a-SiGe with a small absorption edge.
2. The optical fiber detection element according to claim 1, which uses a film and has a gap cell structure.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61219784A JPS6375712A (en) | 1986-09-19 | 1986-09-19 | Detector element for optical fiber |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61219784A JPS6375712A (en) | 1986-09-19 | 1986-09-19 | Detector element for optical fiber |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6375712A true JPS6375712A (en) | 1988-04-06 |
Family
ID=16740954
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP61219784A Pending JPS6375712A (en) | 1986-09-19 | 1986-09-19 | Detector element for optical fiber |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6375712A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011154114A (en) * | 2010-01-26 | 2011-08-11 | Hitachi Cable Ltd | Photoelectric conversion device |
-
1986
- 1986-09-19 JP JP61219784A patent/JPS6375712A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011154114A (en) * | 2010-01-26 | 2011-08-11 | Hitachi Cable Ltd | Photoelectric conversion device |
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