JPS6373557A - Solid-state image sensor - Google Patents
Solid-state image sensorInfo
- Publication number
- JPS6373557A JPS6373557A JP61218390A JP21839086A JPS6373557A JP S6373557 A JPS6373557 A JP S6373557A JP 61218390 A JP61218390 A JP 61218390A JP 21839086 A JP21839086 A JP 21839086A JP S6373557 A JPS6373557 A JP S6373557A
- Authority
- JP
- Japan
- Prior art keywords
- type
- solid
- photo
- region
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 13
- 239000012535 impurity Substances 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims description 11
- 238000003384 imaging method Methods 0.000 claims description 6
- 206010047571 Visual impairment Diseases 0.000 abstract description 8
- 239000000969 carrier Substances 0.000 abstract description 6
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14831—Area CCD imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は固体撮像素子に係シ、特に残像を著るしく低減
することのできるフォト・ダイオードに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a solid-state image sensor, and particularly to a photodiode that can significantly reduce afterimages.
従来の電荷転送素子（以下ＣＯＤという）を利用し几固
体撮像累子を第３図の断面図に示す。第３図にお−て、
Ｐ型半導体基板１の上に、Ｎ型フォト・ダイオード２
、ＣＣＤ０Ｎ型埋込みチャネル領域３．チャネル・スト
ッパ領域４ 、５．ＣＯＤの転送ゲート電極６．Ｐ型半
導体基板１の主表面の転送チャネル領域７が形成されて
いる。まず、転送ゲート電極６に低電圧を印加しておく
。その時のＮｕフォト・ダイオード２．及びＮ型埋込み
チャネル３の電位φｔ−１Ｍ４図にそｎぞれ第１゜第２
の電位８，９で示す。フォト・ダイオード２には、第４
図に示す様に、光照射によるフォト・キャリア１１が蓄
積場れる。A solid-state imaging device using a conventional charge transfer device (hereinafter referred to as COD) is shown in a sectional view in FIG. In Figure 3,
An N-type photodiode 2 is placed on a P-type semiconductor substrate 1.
, CCD0N type buried channel region 3. Channel stopper region 4, 5. COD transfer gate electrode6. A transfer channel region 7 is formed on the main surface of the P-type semiconductor substrate 1. First, a low voltage is applied to the transfer gate electrode 6. Nu photodiode at that time 2. and the potential of the N-type buried channel 3 φt-1M4.
The potentials are shown as 8 and 9. Photo diode 2 has a fourth
As shown in the figure, photo carriers 11 are accumulated due to light irradiation.
次に、転送ゲート電極６に高電圧を印加する。Next, a high voltage is applied to the transfer gate electrode 6.
その時の各部位の電位を、第５図に示す。第３の電位１
０は転送チャネル領域のものであル、フォト・ダイオー
ド２の第１の電位８よりも高くなる様に設定される。The potential of each part at that time is shown in FIG. third potential 1
0 is in the transfer channel region and is set to be higher than the first potential 8 of the photodiode 2.
このような構成とすることによ）％フォト・キャリア１
１は全てＮ型埋込みチャネル領域３に転送され、その後
出力回路（図示せず）まで、Ｎ型埋込みチャネル領域３
を通って移送され、出力される。By having such a configuration)% photo carrier 1
1 are all transferred to the N-type buried channel region 3 and then to the output circuit (not shown).
is transported through and output.
このような従来の構成では、フォト・キャリア１１は全
てフォト・ダイオード２から転送される為、理論的には
残像は生じないことになる。ところが実際には、フォト
・キャリア１１のＬ５Ｊ程度が、フォト・ダイオード２
の中に残存し、次に転送ゲート電極６に高電圧を印加し
た時にこの残存フォト・キャリアが転送されて、残像と
なってしまう。In such a conventional configuration, since all of the photo carriers 11 are transferred from the photo diode 2, theoretically no afterimage will occur. However, in reality, about L5J of photo carrier 11 is connected to photo diode 2.
When a high voltage is next applied to the transfer gate electrode 6, the remaining photo carriers are transferred and become an afterimage.
このように従来の構造では、少なくともＬ５％程度の残
像が生じてしまう。これは、フォト・ダイオード２の第
１の電位８が現実的には、第６図に示し比電圧８′の様
に、中心で高い部分が生ずる為であり、ここに溜ったフ
ォト・キャリア１１′が転送されずに残存するからであ
る。As described above, in the conventional structure, an afterimage of at least about L5% occurs. This is because the first potential 8 of the photodiode 2 actually has a high part at the center, like the specific voltage 8' shown in FIG. ′ remains without being transferred.
本発明の目的は、前記問題点を解決し、フォト参ダイオ
ードの電位を一様にして、残像が著しく減少するように
した固体撮像素子を提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned problems and to provide a solid-state image pickup device in which the potential of the photoreference diode is made uniform, and afterimages are significantly reduced.
本発明の固体撮像素子の構成は、−導電型の半導体基板
の主表面に、多数の他導電型の領域からなるフォト・ダ
イオードがアイランド状に形成され、フォト・キャリア
が転送されずに残存することがないように、前記他導電
型の領域の中央部位は、不純物の型が一導電型か、或は
不純物濃度が周囲部位よ）低くなっていること１＆：特
徴とする。The structure of the solid-state imaging device of the present invention is as follows: - A photodiode consisting of a large number of regions of other conductivity types is formed in an island shape on the main surface of a semiconductor substrate of a conductivity type, and photo carriers remain without being transferred. In order to prevent this, the central region of the region of the other conductivity type is characterized in that the impurity type is one conductivity type or the impurity concentration is lower than that in the surrounding region.
次に図面を参照しながら本発明の詳細な説明する。 Next, the present invention will be described in detail with reference to the drawings.
第１図は本発明の第１の実施例の固体撮像素子を示す半
導体基板の断面図で、第３図と同等な部分には同一符号
を記した。同図において、本実施例の固体撮像素子にお
いては、Ｎ型フォト・ダイオード２の中央部分にＰ型領
域１２を設けである。FIG. 1 is a sectional view of a semiconductor substrate showing a solid-state image pickup device according to a first embodiment of the present invention, and parts equivalent to those in FIG. 3 are denoted by the same reference numerals. In the figure, in the solid-state imaging device of this embodiment, a P-type region 12 is provided in the center of an N-type photodiode 2.
この他導電型の半導体領域１２によシ、第４図で示し友
ように、電位の高いところがなくな〕、従って転送され
ずに残存するフォト・キャリアが生じることがない。In addition, as shown in FIG. 4, there are no areas of high potential in the semiconductor region 12 of the conductive type, so that no photo carriers remain without being transferred.
第２図は本発明の第２の実施例の固体撮像素子を示す半
導体基板の断面図である。同図において、本固体撮像累
子は、Ｎ型フォト・ダイオード２の中央部分にＮ−型領
域１３ｔ−設けである。この様な構造にする事により、
フォト−ダイオード２の中央部分では電位が低くなる。FIG. 2 is a sectional view of a semiconductor substrate showing a solid-state image sensing device according to a second embodiment of the present invention. In the figure, the present solid-state imaging device is provided with an N-type region 13t in the center of an N-type photodiode 2. By creating a structure like this,
In the central part of the photo-diode 2, the potential is low.
従ってフォト・キャリアが転送されずに残存するような
ことがない。Therefore, no photo carrier remains without being transferred.
以上説明し友ように、本発明によれば、フォト・ダイオ
ード２の電位が、第５図に第１の電位８で示し友様に全
体にわたって平担になる為、フォト・キャリア１１はＮ
型埋込みチャネル領域に転送される際にフォト・ダイオ
ード２に取力残される事がない為、残像は著るしく低減
されるという効果が得られる。As explained above, according to the present invention, the potential of the photodiode 2 becomes flat over the whole as shown by the first potential 8 in FIG.
Since no energy is left behind in the photodiode 2 when transferred to the mold buried channel region, the effect of significantly reducing afterimages can be obtained.
第１図は本発明の第１の実施例の固体撮像素子を示す半
導体基板の断面図、第２図は本発明の第２の実施例の固
体撮像素子を示す半導体基板の断面図、第３図は従来の
固体撮像素子を示す半導体基板の断面図、第４図、第５
図、第６図は第３図の半導体基板の各部の電位を示す模
式図である。
１・・・・・・Ｐ型半導体基板、２・・・・・・Ｎ型フ
ォト・ダイオード、３・−・・・・Ｎ型埋込みチャネル
領域、４゜５・・・・・・チャネル・ストッパ、６・山
・・転送ゲート電極、７・・・・・・転送チャネル領域
、訃・・・・・Ｎ型フォト・ダイオード（第１）の電位
、９・・・・・・Ｎ型埋込みチャネル（第３）の電位、
１０・・・・・・転送チャネル領域（第２）の電位１１
．１１’・・・・・・フォト・キャリア、１２・・・・
・・Ｐ型領域、１３・・・・・・Ｎ−型領域。
卆１ 田
亭２ 面
第 ６ 凹
第４図
ＩFIG. 1 is a cross-sectional view of a semiconductor substrate showing a solid-state image sensor according to a first embodiment of the present invention, FIG. 2 is a cross-sectional view of a semiconductor substrate showing a solid-state image sensor according to a second example of the present invention, and FIG. The figures are cross-sectional views of a semiconductor substrate showing a conventional solid-state image sensor, Figures 4 and 5.
FIG. 6 is a schematic diagram showing the potential of each part of the semiconductor substrate of FIG. 3. 1... P-type semiconductor substrate, 2... N-type photo diode, 3... N-type buried channel region, 4° 5... Channel stopper , 6. Mountain: transfer gate electrode, 7: transfer channel region, bottom: potential of N-type photo diode (first), 9: N-type buried channel. (third) potential,
10... Potential 11 of transfer channel region (second)
．． 11'...Photo carrier, 12...
...P-type region, 13...N-type region. Book 1 Tabei 2 Side No. 6 Concave No. 4 I
Claims (1)
域からなるフォト・ダイオードがアイランド状に形成さ
れた固体撮像素子において、前記他導電型の領域の中央
部位は、フォト・キャリアが転送されずに残存すること
がないように、不純物の型が一導電型か或は不純部の濃
度が周囲部位より低くなっていることを特徴とする固体
撮像素子。In a solid-state imaging device in which a photodiode consisting of a large number of regions of a different conductivity type is formed in an island shape on the main surface of a semiconductor substrate of one conductivity type, the central portion of the region of the other conductivity type is a photo carrier. A solid-state imaging device characterized in that the type of impurity is one conductivity type or the concentration of the impurity is lower than that of the surrounding area so that the impurity does not remain without being transferred.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61218390A JPS6373557A (en) | 1986-09-16 | 1986-09-16 | Solid-state image sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61218390A JPS6373557A (en) | 1986-09-16 | 1986-09-16 | Solid-state image sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6373557A true JPS6373557A (en) | 1988-04-04 |
Family
ID=16719154
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61218390A Pending JPS6373557A (en) | 1986-09-16 | 1986-09-16 | Solid-state image sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6373557A (en) |
-
1986
- 1986-09-16 JP JP61218390A patent/JPS6373557A/en active Pending
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