JPS6373243A - Resist pattern forming method - Google Patents
Resist pattern forming methodInfo
- Publication number
- JPS6373243A JPS6373243A JP22023486A JP22023486A JPS6373243A JP S6373243 A JPS6373243 A JP S6373243A JP 22023486 A JP22023486 A JP 22023486A JP 22023486 A JP22023486 A JP 22023486A JP S6373243 A JPS6373243 A JP S6373243A
- Authority
- JP
- Japan
- Prior art keywords
- resist pattern
- resist
- light
- film
- moisture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 23
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 239000003504 photosensitizing agent Substances 0.000 claims description 17
- 238000000354 decomposition reaction Methods 0.000 claims description 13
- 229920002120 photoresistant polymer Polymers 0.000 claims description 7
- 229920003986 novolac Polymers 0.000 claims description 6
- 229920005989 resin Polymers 0.000 claims description 6
- 239000011347 resin Substances 0.000 claims description 6
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 claims description 5
- 229930003836 cresol Natural products 0.000 claims description 5
- 239000011261 inert gas Substances 0.000 claims description 3
- QVEIBLDXZNGPHR-UHFFFAOYSA-N naphthalene-1,4-dione;diazide Chemical class [N-]=[N+]=[N-].[N-]=[N+]=[N-].C1=CC=C2C(=O)C=CC(=O)C2=C1 QVEIBLDXZNGPHR-UHFFFAOYSA-N 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 239000003795 chemical substances by application Substances 0.000 abstract description 7
- 239000003513 alkali Substances 0.000 abstract description 3
- 238000004090 dissolution Methods 0.000 abstract description 2
- 230000000694 effects Effects 0.000 description 6
- KGWYICAEPBCRBL-UHFFFAOYSA-N 1h-indene-1-carboxylic acid Chemical compound C1=CC=C2C(C(=O)O)C=CC2=C1 KGWYICAEPBCRBL-UHFFFAOYSA-N 0.000 description 4
- 239000011230 binding agent Substances 0.000 description 4
- CCGKOQOJPYTBIH-UHFFFAOYSA-N ethenone Chemical compound C=C=O CCGKOQOJPYTBIH-UHFFFAOYSA-N 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010828 elution Methods 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 150000002561 ketenes Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
Landscapes
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、レジストパターンの形成方法に関するもの
である。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for forming a resist pattern.
第２図（ａ）〜（Ｃ）は従来のポジ型フォトレジストの
レジストパターン形成方法の工程を示す断面図であり、
まず、第２図（ａ）に示すように、被加工基板１上にレ
ジス） Ｌ！ ２を’１ 布ｔｚプリベークし、次いで
、第２図（ｂ）に示すように、マスク３を用いてレジス
ト膜２を感光剤の分解波長を含む光４による選択露光を
行った後、第２図（Ｃ）に示すように現像を行い、レジ
ストパターンを形成する。FIGS. 2(a) to 2(C) are cross-sectional views showing the steps of a conventional resist pattern forming method for positive photoresist,
First, as shown in FIG. 2(a), a resist (L!) is placed on the substrate 1 to be processed. As shown in FIG. 2(b), the resist film 2 is selectively exposed to light 4 containing the decomposition wavelength of the photosensitizer using a mask 3, and then a second Development is performed as shown in Figure (C) to form a resist pattern.
一般にポジ型フォトレジストは、下記の一般式（Ｉ）で
表されるナフトキノンジアジドの誘導体を感光剤とし、
一般式（ＩＩ ）で表されるクレゾール型ノボラック樹
脂をバインダ樹脂としている。Generally, positive photoresists use a naphthoquinonediazide derivative represented by the following general formula (I) as a photosensitizer, and
A cresol type novolak resin represented by the general formula (II) is used as the binder resin.
第２図（ａ）のレジスト膜２中は、一般式ＣＩ）と（Ｉ
Ｉ ）の混合状態になっている。また、第２図（ｂ）で
は、露光部２ａにおいて感光剤（Ｉ）が光分解し、まず
、下記の一般式（ＩＩＩ）で表されるケテンを生成する
。そして、さらにこのケテンは、空気中の水分により加
水分解され、一般式（ＩＶ）で表されるインデンガルポ
ン酸に速やかに移行する。In the resist film 2 of FIG. 2(a), general formulas CI) and (I
I) is in a mixed state. Further, in FIG. 2(b), the photosensitizer (I) is photodecomposed in the exposed portion 2a, and first, ketene represented by the following general formula (III) is generated. Further, this ketene is hydrolyzed by moisture in the air and rapidly converts to indengalponic acid represented by general formula (IV).
○
（Ｉ） （ＩＩＩ） （ｒｖ
）一般式（Ｉ）から（ＩＶ）への変化は、アルカリ難溶
物から易溶物への変化を意味する。この時点で変化して
いない未露光部は、一般式ＣＩ）と（ＩＩ）の混合状態
にあり、露光部２ａは（ＩＶ）と（’ＩＩ）の混合状態
にある。○ (I) (III) (rv
) The change from general formula (I) to (IV) means a change from a poorly soluble alkali to an easily soluble alkali. The unexposed area, which has not changed at this point, is in a mixed state of general formulas CI) and (II), and the exposed part 2a is in a mixed state of (IV) and ('II).
第２図（Ｃ）の現像工程では、アルカリ現像液を使用す
るため、一般式（ＩＶ） 、 （ＩＩ）のいずれもアル
カリ可溶性である露光部２ａは速やかに溶解し、アルカ
リ難溶物を含む未露光部は溶解せずにレジストパターン
を形成する。In the developing step of FIG. 2(C), since an alkaline developer is used, the exposed area 2a of general formulas (IV) and (II), both of which are alkali-soluble, is quickly dissolved and contains poorly alkali-soluble substances. A resist pattern is formed in the unexposed area without being dissolved.
以上がポジ型フォトレジストのパターン形成方法および
その原理である。The above is the method of forming a positive photoresist pattern and its principle.
上記のような従来のレジストパターン形成方法において
は、現像時、レジスト膜２に未露光部が残存するのは、
アルカリ難溶性の感光剤（Ｉ）とアルカリ可溶性のバイ
ンダ樹脂（ＩＩ）との混合効果により、全体としてアル
カリ難溶性になっているためであるが、アルカリ可溶成
分の現像液中への溶出はやはり避けられず、未露光部の
膜減りが生じる。この膜減りは、レジメ） ｆｆＭ厚の
減少、未露光部残膜率の低下と同時に、パターンエツジ
の角取れ、パターンの細り等のレジストパターン断面形
状の悪化につながっている。In the conventional resist pattern forming method as described above, unexposed areas remaining in the resist film 2 during development are caused by
This is because the mixing effect of the poorly alkali-soluble photosensitizer (I) and the alkali-soluble binder resin (II) makes it poorly alkali-soluble as a whole, but the elution of alkali-soluble components into the developer is This is unavoidable, and film thinning occurs in unexposed areas. This thinning of the film leads to a decrease in the regimen) ffM thickness and a decrease in the remaining film rate in unexposed areas, as well as deterioration of the cross-sectional shape of the resist pattern, such as chamfering of pattern edges and thinning of the pattern.
この発明は、上記の問題点を解消するためになされたも
ので、レジスト膜の未露光部残膜率の向上およびレジス
トパターン断面形状の向上を可能にするレジストパター
ン形成方法を得ることを目的とするものである。The present invention was made to solve the above problems, and an object of the present invention is to obtain a resist pattern forming method that makes it possible to improve the residual film rate of the unexposed part of the resist film and the cross-sectional shape of the resist pattern. It is something to do.
この発明に係るレジストパターン形成方法は、現像処理
前にレジスト膜に水分の存在しない雰囲気中で感光剤の
分解波長を含む光を照射するものである。In the resist pattern forming method according to the present invention, a resist film is irradiated with light having a decomposition wavelength of a photosensitizer in an atmosphere free of moisture before development.
この発明においては、レジストＨの未露光部の感光剤と
バインダ樹脂との間にエステル結合を生成し、アルカリ
可溶成分であるバインダ樹脂をアルカリ不溶化すること
から、現像液に対する露光部と未露光部の溶解選択性が
強められる。In this invention, an ester bond is generated between the photosensitive agent and the binder resin in the unexposed area of the resist H, and the binder resin, which is an alkali-soluble component, is rendered alkali-insoluble. The solubility selectivity of the parts is enhanced.
第１図（ａ）〜（ｄ）はこの発明のポジ型フォトレジス
トのパターン形成方法の工程を示す断面図であり、第１
図（ａ）、（ｂ）、（ｄ）は、第２図（ａ）〜（Ｃ）の
従来と同様の工程であり、第１図（Ｃ）はこの発明の主
要工程で、水分の存在しない雰囲気中における感光剤の
分解波長を含む光４の全面照射状態を示している。FIGS. 1(a) to 1(d) are cross-sectional views showing the steps of the positive photoresist pattern forming method of the present invention.
Figures (a), (b), and (d) are the same steps as the conventional process shown in Figures 2 (a) to (C), and Figure 1 (C) is the main process of this invention, in which the presence of moisture is present. The figure shows a state in which the entire surface is irradiated with light 4 that includes the decomposition wavelength of the photosensitizer in an atmosphere with no heat.
すなわち、第１図（ａ）、（ｂ）に示すように、被加工
基板１上に形成されたレジスト膜２に、マスク３を用い
て感光剤の分解波長を含む光４を照射して選択的に露光
し、レジストパターンを形成する。その後、第１図（Ｃ
）に示すように、水分の存在しない雰囲気中（例えば絶
対水分量１×１０川ｇ／ｍ３以下）において感光剤の分
解波長を含む光４の全面照射を行い、現像して第１図（
ｄ）に示すように、所望のレジストパターンを形成する
。That is, as shown in FIGS. 1(a) and 1(b), a resist film 2 formed on a substrate 1 to be processed is irradiated with light 4 containing the decomposition wavelength of the photosensitizer using a mask 3, and selected. to form a resist pattern. After that, Figure 1 (C
), the entire surface is irradiated with light 4 that includes the decomposition wavelength of the photosensitizer in an atmosphere without moisture (for example, absolute moisture content is 1 x 10 g/m3 or less), and developed to produce a
As shown in d), a desired resist pattern is formed.
上記工程のうち、第１図（Ｃ）に示す工程の水分の存在
しない雰囲気とは、空気中の水分を除去した状ＩＥを意
味し、これは真空下あるいは窒素。Among the above steps, the moisture-free atmosphere in the step shown in FIG. 1(C) means an IE in which moisture in the air has been removed, and this is under vacuum or nitrogen.
アルゴン等の不活性なガスによる置換により可能である
。また、照射する感光剤の分解波長を含む光４は、第１
図（ｂ）で照射する通常の露光と同質の光、すなわち通
常、波長３６５ ｎ ｍ 、 ４０５ｎｍ、４３６ｎｍ
のいずれか、あるいはすべてを含む光であればよい。た
だし、光架橋生成の可能性のある波長３００ｎｍ以下の
光を含んではならない。さらに、光の照度および照射エ
ネルギーも、第１図（ｂ）の通常の露光と同程度でよい
。This is possible by replacing with an inert gas such as argon. Further, the light 4 including the decomposition wavelength of the photosensitive agent to be irradiated is the first
Light of the same quality as the normal exposure irradiated in figure (b), that is, usually wavelengths of 365 nm, 405 nm, 436 nm
Any light that includes any or all of the above is sufficient. However, it must not contain light with a wavelength of 300 nm or less, which may cause photocrosslinking. Furthermore, the illuminance and irradiation energy of the light may be on the same level as the normal exposure shown in FIG. 1(b).
以下に、第１図（Ｃ）の処理を従来方法に付加すること
により、現像の未露光部残膜率の向上およびレジストパ
ターン断面形状の向上等の効果が得られる理由を述べる
。The reason why adding the process shown in FIG. 1(C) to the conventional method provides effects such as an improvement in the residual film rate in the unexposed area during development and an improvement in the cross-sectional shape of the resist pattern will be described below.
上述のとおり、第１図（ｂ）の選択露光後、未露光部は
一般式（Ｉ）でナフトキノンジアジドの誘導体と、一般
式（ｎ ）で表されるクレゾール型ノボラックとの混合
状態にあり、露光部２ａは、一般式（Ｉ）が変化して生
成した一般式（ＩＶ）で表されるインデンカルボン酸と
、一般式（ＩＩ）のクレゾール型ノボラックとの混合状
態にある。この状態のときに、第１図（Ｃ）の処理、す
なわち水分の存在しない雰囲気下で感光剤の分解波長を
含む光４を全面照射すると、未露光部の感光剤は光分解
し、一般式（ＩＩＩ）で表されるケテンを生成する。そ
して、ここでもし雰囲気中に水分が存在すれば、前述の
ように、ケテンは一般式（ＩＶ）のインデンカルボン酸
に変化するが、水分の存在しない雰囲気下では、ケテン
は一般式（Ｖ）で表されるように、クレゾール型ノボラ
ックの水酸基との間にエステル結合を生成する。As mentioned above, after the selective exposure shown in FIG. 1(b), the unexposed area is in a mixed state of the naphthoquinone diazide derivative represented by the general formula (I) and the cresol type novolak represented by the general formula (n), The exposed area 2a is in a mixed state of indenecarboxylic acid represented by general formula (IV) produced by changing general formula (I) and cresol type novolac of general formula (II). In this state, when the entire surface is irradiated with light 4 containing the decomposition wavelength of the photosensitizer in an atmosphere without moisture, the photosensitizer in the unexposed area is photodecomposed, and the general formula A ketene represented by (III) is produced. If moisture is present in the atmosphere, ketene changes to indenecarboxylic acid of general formula (IV) as described above, but in an atmosphere without moisture, ketene changes to indenecarboxylic acid of general formula (V). As shown, an ester bond is formed between the hydroxyl group of the cresol type novolac.
り難溶性である一般式（Ｉ）がアルカリ可溶性である一
般式（ｒＶ）に変化するのに対し、水分非存在下での露
光では、アルカリ可溶性の一般式ＣＵ）がアルカリ難溶
性である一般式（Ｖ）に変化することを意味する。この
ようにして未露光部は、アルカリ可溶成分であるクレゾ
ール型ノボラックが、感光剤とエステル結合することに
よりアルカリ難溶化する。また、露光部２ａでは、第１
図（ｂ）の時点で感光剤は分解し、既に一般式（１７）
のインデンカルボン酸に変化しているため、感光剤の分
解波長を含む光４を照射しても、変化は生じない。However, when exposed to light in the absence of water, the alkali-soluble general formula (CU) changes to the alkali-soluble general formula (rV), which is poorly soluble. It means changing to formula (V). In this way, the unexposed area becomes poorly alkali-soluble by forming an ester bond with the photosensitizer by the cresol-type novolak, which is an alkali-soluble component. Further, in the exposure section 2a, the first
At the time of figure (b), the photosensitizer has decomposed and the general formula (17) has already been expressed.
Since it has changed to indene carboxylic acid, no change occurs even if it is irradiated with light 4 that includes the decomposition wavelength of the photosensitizer.
したがって、通常の空気中での選択露光後、現像処理前
に水分の存在しない雰囲気中で感光剤の分解波長を含む
光４を全面照射すると、未露光部が露光部２ａに対して
選択的に変化し、アルカリ可溶成分が難溶化することに
より未露光部のアルカリ難溶度が増大する。そしてこの
ことは、現像液に対する露光部２ａと未露光部との溶解
選択性の増大を意味し、その結果として、現像後の未露
光部残膜率の向上およびレジストパターン断面形状の向
上等の効果を与える。Therefore, if the entire surface is irradiated with light 4 containing the decomposition wavelength of the photosensitizer in an atmosphere without moisture after selective exposure in normal air and before development processing, the unexposed areas will be selectively exposed to the exposed areas 2a. As a result, the alkali-soluble component becomes less soluble, thereby increasing the alkali-solubility of the unexposed area. This means an increase in dissolution selectivity between the exposed area 2a and the unexposed area with respect to the developer, and as a result, an improvement in the remaining film rate in the unexposed area after development and an improvement in the cross-sectional shape of the resist pattern. give effect.
なお、第１図（Ｃ）の処理は、詳細を前記した感光剤の
分解波長を含む光４を発生する光源と、真空状態あるい
は不活性なガスによる空気の置換を可能にした照射室を
有する装置を使用することにより可能である。しかし、
照射部に上記のような水分の存在しない雰囲気を作り出
す機能を付加すれば、ステッパープロジェクション等の
通常の露光装置でも処理可能となる。The process shown in FIG. 1(C) has a light source that generates light 4 containing the decomposition wavelength of the photosensitizer described in detail above, and an irradiation chamber that allows air to be replaced by a vacuum state or an inert gas. This is possible by using a device. but,
If the function of creating an atmosphere free of moisture as described above is added to the irradiation section, processing can be performed using a normal exposure apparatus such as a stepper projection.
〔発明の効果〕
この発明は以上説明したとおり、レジスト膜を選択的に
露光し、現像処理することによって所定のレジストパタ
ーンを形成する方法において、現像処理前に水分の存在
しない雰囲気中で感光剤の分解波長を含む光を全面照射
する工程を付加するようにしたので、未露光部のアルカ
リ難溶度を増大させ、現像液に対する露光部と未露光部
の溶解選択性の増大が可能となる。そして、この結果と
して、現像後の未露光部残膜率の向上およびレジストパ
ターン断面形状の向上といった極めて大なる効果が得ら
れる。[Effects of the Invention] As explained above, the present invention provides a method for forming a predetermined resist pattern by selectively exposing a resist film to light and developing it, in which a photosensitive agent is applied in an atmosphere free of moisture before the development process. By adding a step of irradiating the entire surface with light having a decomposition wavelength of . As a result, extremely large effects such as an improvement in the remaining film rate in the unexposed area after development and an improvement in the cross-sectional shape of the resist pattern can be obtained.
第１図はこの発明の２＝実施例を示すポジ型フォトレジ
ストのパターン形成方法の工程断面図、第２図は従来の
ポジ型フォトレジストのパターン形成方法の工程断面図
である。
図において、１は被加工基板、２はレジスト膜、３はマ
スク、４は感光剤の分解波長を含む光である。
なお、各図中の同一符号は同一または和名部分を示す。
代理人 大 岩 増 雄 （外２名）第１図
第２図
手続補正書（０発）
６岸３ ２０
昭和 月 日
「
特許庁長官殿 ゛”ｌ −
： −ｔｌ、事件の表示 特願昭８１−２２０２３
４号２、発明の名称 レジストパターン形成方法３
、補正をする者
５、補正の対象
明細書の発明の詳細な説明の欄
６、補正の内容
（１）明細、！３第７頁１〜２行の「さらに、・・・・
・・同程度でよい。」を削除する。
（２）同じく第９頁１９行の「ステッパープロジェクシ
ョン」を、「ステッパー、プロジェクション」と補正す
る。
以上FIG. 1 is a process cross-sectional view of a positive photoresist pattern forming method showing a second embodiment of the present invention, and FIG. 2 is a process cross-sectional view of a conventional positive photoresist pattern forming method. In the figure, 1 is a substrate to be processed, 2 is a resist film, 3 is a mask, and 4 is light containing a decomposition wavelength of the photosensitizer. Note that the same reference numerals in each figure indicate the same parts or parts with Japanese names. Agent Masuo Oiwa (2 others) Figure 1 Figure 2 Procedural amendments (0) 6 Kishi 3 20 Showa Month Day ``Dear Commissioner of the Japan Patent Office゛''l -
: -tl, Display of incident Patent application 1981-22023
No. 4 2, Title of the invention: Resist pattern forming method 3
, Person making the amendment 5, Detailed description of the invention in the specification to be amended 6, Contents of the amendment (1) Specification,! 3, page 7, lines 1-2, “Furthermore,...
...The same level is fine. ” to be deleted. (2) Similarly, "Stepper Projection" on page 9, line 19 is corrected to "Stepper, Projection."that's all
Claims (2)
後所定のパターンを選択的に露光し、現像処理すること
によってレジストパターンを形成する方法において、前
記現像処理前に前記レジスト膜に水分の存在しない雰囲
気中で感光剤の分解波長を含む光を照射する工程を含む
ことを特徴とするレジストパターン形成方法。(1) In a method of forming a resist pattern by coating a resist film on a substrate to be processed, baking it, selectively exposing a predetermined pattern to light, and developing it, the resist film is free of moisture before the development process. A resist pattern forming method comprising the step of irradiating light having a decomposition wavelength of a photosensitizer in an atmosphere that does not exist.
レゾール型ノボラック樹脂との組み合わせで構成される
ポジ型フォトレジストからなり、かつ水分の存在しない
雰囲気を真空あるいは不活性なガスによる置換、充填に
より作り出すことを特徴とする特許請求の範囲第（１）
項記載のレジストパターン形成方法。(2) The resist is a positive photoresist composed of a combination of a naphthoquinone diazide derivative and a cresol type novolak resin, and a moisture-free atmosphere is created by vacuum or by replacing or filling with an inert gas. Characteristic Claim No. (1)
The resist pattern forming method described in Section 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22023486A JPS6373243A (en) | 1986-09-17 | 1986-09-17 | Resist pattern forming method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22023486A JPS6373243A (en) | 1986-09-17 | 1986-09-17 | Resist pattern forming method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6373243A true JPS6373243A (en) | 1988-04-02 |
Family
ID=16747988
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22023486A Pending JPS6373243A (en) | 1986-09-17 | 1986-09-17 | Resist pattern forming method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6373243A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01243052A (en) * | 1988-03-24 | 1989-09-27 | Matsushita Electron Corp | Resist pattern forming method |
| JPH02264960A (en) * | 1989-04-06 | 1990-10-29 | Matsushita Electron Corp | Resist pattern forming method |
| JPH02264961A (en) * | 1989-04-06 | 1990-10-29 | Matsushita Electron Corp | Resist pattern forming method |
-
1986
- 1986-09-17 JP JP22023486A patent/JPS6373243A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01243052A (en) * | 1988-03-24 | 1989-09-27 | Matsushita Electron Corp | Resist pattern forming method |
| JPH02264960A (en) * | 1989-04-06 | 1990-10-29 | Matsushita Electron Corp | Resist pattern forming method |
| JPH02264961A (en) * | 1989-04-06 | 1990-10-29 | Matsushita Electron Corp | Resist pattern forming method |
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