JPS6372116A - X-ray exposure device - Google Patents
X-ray exposure deviceInfo
- Publication number
- JPS6372116A JPS6372116A JP61215716A JP21571686A JPS6372116A JP S6372116 A JPS6372116 A JP S6372116A JP 61215716 A JP61215716 A JP 61215716A JP 21571686 A JP21571686 A JP 21571686A JP S6372116 A JPS6372116 A JP S6372116A
- Authority
- JP
- Japan
- Prior art keywords
- ray
- absorber
- exposure
- rays
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000006096 absorbing agent Substances 0.000 claims abstract description 22
- 238000001015 X-ray lithography Methods 0.000 claims abstract description 5
- 229910001385 heavy metal Inorganic materials 0.000 claims description 3
- 238000012544 monitoring process Methods 0.000 claims description 2
- 238000012546 transfer Methods 0.000 claims description 2
- 239000000523 sample Substances 0.000 abstract description 8
- 239000010931 gold Substances 0.000 abstract description 5
- 239000012528 membrane Substances 0.000 abstract description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052737 gold Inorganic materials 0.000 abstract description 3
- 229920001721 polyimide Polymers 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 abstract description 2
- 230000003321 amplification Effects 0.000 abstract 1
- 238000010030 laminating Methods 0.000 abstract 1
- 150000004767 nitrides Chemical class 0.000 abstract 1
- 238000003199 nucleic acid amplification method Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005469 synchrotron radiation Effects 0.000 description 3
- 229910052790 beryllium Inorganic materials 0.000 description 2
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000002123 temporal effect Effects 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70558—Dose control, i.e. achievement of a desired dose
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はＸ線リソグラフィに係り、特にＳＯＲなど、Ｘ
線強度の経時変化が大きいＸ線源を用いる場合の露光強
度モニターに関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to X-ray lithography, and particularly to X-ray lithography such as SOR.
The present invention relates to an exposure intensity monitor when using an X-ray source with a large change in radiation intensity over time.
Ｘ線露光装置は現在、研究開発の段階にあり、数機種の
装置がやっと市場に出たところである。X-ray exposure equipment is currently in the research and development stage, and several types of equipment have just arrived on the market.
しかし、これらの露光装置にもＸ線用の露光強度モニタ
ーは設置されていない、現在迄のところ、露光強度のモ
ニタ一方法として提案されているのは主に半導体検出器
や比例増幅器を用いるもので、いずれも入射Ｘ線を直接
受光するものである（Ｂ。However, these exposure devices are not equipped with X-ray exposure intensity monitors; to date, the only methods proposed for monitoring exposure intensity are those that mainly use semiconductor detectors or proportional amplifiers. Both of them directly receive incident X-rays (B.
Ｌ 、Ｈｅｎｋｅ他、ジエー・アプライド・フィジック
ス、第５２巻、 １９８１年、第１５０９頁（Ｊ 、Ａ
ｐｐｌ、Ｐｈｙｓ。L. Henke et al., G.A. Applied Physics, Vol. 52, 1981, p. 1509 (J.A.
ppl, Phys.
Ｖｏ！、５２．ｐ、１５０９ （１９８１））参照）。Vo! , 52. p. 1509 (1981)).
上記従来技術では、入射Ｘ線を受光するために、試料レ
ジストの露光と同時にＸ線強度をモニターすることが困
難であること、また、同時モニターするためには検出器
を露光面に設置するため、Ｘ線の露光面積が大きく制約
されるという問題があった。With the above conventional technology, it is difficult to monitor the X-ray intensity at the same time as the sample resist is exposed in order to receive the incident X-rays. However, there was a problem in that the area exposed to X-rays was greatly restricted.
本発明の目的は露光面積を減少させることなく、露光と
露光強度を同時にモニターすることにある。An object of the present invention is to simultaneously monitor exposure and exposure intensity without reducing the exposed area.
上記目的は、Ｘ線マスクのパターンを形成する吸収体（
Ｘ線を吸収して電子を発する物体で、フォトカソードと
呼びれることもある）など、Ｘ線の存在領域にあるＸ線
吸収体がＸ線の照射によって発する電子、特に２次電子
を検出する手段を設けることによって達成される。The above purpose is to create an absorber (
An object that absorbs X-rays and emits electrons; an X-ray absorber such as a photocathode (sometimes called a photocathode) detects electrons, especially secondary electrons, emitted by X-ray irradiation in an area where X-rays exist. This is achieved by providing means.
なお、Ｘ線吸収体としては、Ａｕ、Ｗ、Ｍｏなどの重金
属が適用できる。Note that heavy metals such as Au, W, and Mo can be used as the X-ray absorber.
Ｘ線吸収体から発生する２次電子は真空中で長い飛程（
例えば１０″″’Ｐａの圧力下で１ｋｅＶのエネルギー
を有する２次電子のｆｌｉｔｉｎｇ’ ｓ ｒａｎｇｅ
は３００ｍ以上である）を持つため、２次電子の検出器
を露光領域より離して設置することができるｔ、また、
吸収体（フォトカソード）として、Ｘ線マスクの吸収体
パターンをそのまま利用するか、これに準じたＸ線吸収
体を露光面などＸ線が存在する領域に設置すれば良く、
特別のＸ線用センサーを必要としない。The secondary electrons generated from the X-ray absorber have a long range (
For example, the fliting's range of secondary electrons with an energy of 1 keV under a pressure of 10''''Pa
(300 m or more), the secondary electron detector can be installed at a distance from the exposure area, and
As the absorber (photocathode), the absorber pattern of the X-ray mask can be used as is, or an X-ray absorber similar to this can be installed in the area where X-rays are present, such as on the exposure surface.
No special X-ray sensor is required.
実施例１
本実施例の構成概略図を第１図に示す、被加工基板１゛
にＸ線レジスト２を塗布した試料にＸ線マスクを近接さ
せて設定する。ｘ、ｉａマスクは１μｍ厚の金で作られ
た吸収体４、および、これを保持するためのメンブレン
３より構成される。上記メンブレンは窒化ホウ素（Ｂ
Ｎ）膜（２μｍ）にポリイミド膜（３μｍ）を積層させ
て作成した。２次電子の検出器としてチャネルトロン（
ゲイン；１０８）を用い、これのプローブ先端をＸ線マ
スクの最外側の吸収体パターンより約２０国難れた位置
に設置した。チャネルトロン５よりの出力パルス信号を
増幅回路により処理して、その電圧を測定した。Ｘ線源
として回転対陰極型（陰極材にＭＯを用いた）を使用し
た場合、Ｘ線６を露光することにより、本モニターの出
力電圧として約２Ｖの信号を得ることが出来た０本実施
例では試料のＸ線露光は真空中（＜１０−’Ｐａ）で行
った。Embodiment 1 A schematic diagram of the structure of this embodiment is shown in FIG. 1. An X-ray mask is set in close proximity to a sample in which an X-ray resist 2 is applied to a substrate 1 to be processed. The x, ia mask is composed of an absorber 4 made of gold with a thickness of 1 μm and a membrane 3 for holding the absorber 4. The above membrane is made of boron nitride (B
N) A polyimide film (3 μm) was laminated on a film (2 μm). Channeltron (
A gain of 108) was used, and the tip of the probe was placed at a position approximately 20 mm away from the outermost absorber pattern of the X-ray mask. The output pulse signal from the channeltron 5 was processed by an amplifier circuit, and its voltage was measured. When using a rotating anticathode type (using MO as the cathode material) as an X-ray source, by exposing to X-rays 6, a signal of approximately 2V could be obtained as the output voltage of this monitor. In the example, the X-ray exposure of the sample was performed in vacuum (<10-'Pa).
本実施例によればＸ８＠マスクをそのままセンサーとし
て用いて、露光中のＸ線強度をモニターすることが出来
る。According to this embodiment, the X8@mask can be used as it is as a sensor to monitor the X-ray intensity during exposure.
実施例２
本実施例では第２図に示す如く試料の露光を１気圧のＨ
ｅ中で行うことにし、このため、露光部とＸ線導入部を
厚さ２００μｍのベリリウム膜２０で分離した。Ｘ線レ
ジスト、および、マスクの設置方法は実施例１と同様と
した。フォトカソードとして、上記のベリリウム膜上に
１００人厚さの金３０を真空蒸着法により被着した。２
次電子の検出器として２台のチャネルトロン５を露光域
の外側より２０論離れた上下の位置に設置した。Example 2 In this example, the sample was exposed to light at 1 atm H as shown in Figure 2.
Therefore, the exposure section and the X-ray introduction section were separated by a beryllium film 20 with a thickness of 200 μm. The method of installing the X-ray resist and mask was the same as in Example 1. As a photocathode, gold 30 having a thickness of 100 mm was deposited on the above beryllium film by vacuum evaporation. 2
Two channeltrons 5 were installed as secondary electron detectors at upper and lower positions 20 degrees apart from the outside of the exposure area.
それぞれのチャネルトロン７からの信号を増幅した後、
演算回路１１により、これらの信号の和を測定した。Ｘ
線源にはシンクロトロン軌道放射光（電子エネルギー＊
２−５ Ｇ ｅ Ｖ ＋軌道半径３０ｍ）を用い、さ
らに、回転する平面ミラー１８によってこれを反射させ
ることにより、放射光ビームの光束を拡幅させた（６．
６’ ）。すなわち、反射された光束６，６′がミラー
の傾きの時間変化に伴ってフォトカソード面上を掃査す
ることになる。After amplifying the signals from each channeltron 7,
The arithmetic circuit 11 measured the sum of these signals. X
The radiation source is synchrotron orbital synchrotron radiation (electron energy*
2-5 G e V + orbital radius of 30 m), and further reflected by the rotating plane mirror 18 to widen the luminous flux of the synchrotron radiation beam (6.
6'). In other words, the reflected light beams 6 and 6' sweep over the photocathode surface as the tilt of the mirror changes over time.
したがって、チャネルトロンからの検出信号強度の時間
変化を測定することにより、拡幅された光束の露光強度
分布をモニターすることができる。Therefore, by measuring the temporal change in the intensity of the detection signal from the channeltron, it is possible to monitor the exposure intensity distribution of the broadened light beam.
第３図に放射光を露光中に測定した信号電圧の時間変化
を示す６本実施例によれば試料レジストの露光と同時に
露光面内の光強度分布をモニターすることが可能となる
。FIG. 3 shows the temporal change in signal voltage measured during exposure to synchrotron radiation.According to this embodiment, it is possible to monitor the light intensity distribution within the exposed surface simultaneously with the exposure of the sample resist.
なお、本発明で適用できる吸収体の膜厚は５〜１０００
人が最適である。すなわち、膜厚が５Å以下では発生す
る電子の数が少なく、よって検出することが不可能であ
り、また１０００人を越えると発生する電子の数が過剰
となり、露光装置内での反射電子が多くなり、レジスト
を感応させたりして、パターン転写の性能を低下させる
。The film thickness of the absorber that can be applied in the present invention is 5 to 1000.
People are the best. In other words, if the film thickness is less than 5 Å, the number of electrons generated is small and therefore cannot be detected, and if the thickness exceeds 1,000 people, the number of electrons generated becomes excessive and there are many reflected electrons in the exposure equipment. This may cause the resist to become sensitive, reducing pattern transfer performance.
また、吸収体としては、Ａｕの他にＮ１５Ｗなどの重金
属を適用することができた。Furthermore, as the absorber, heavy metals such as N15W could be used in addition to Au.
本発明によれば、レジストへのＸ線露光と同時に、露光
強度、および、その分布をモニターできるので、Ｘ線リ
ソグラフィにおけるレジストパターン寸法の高精度制御
に多大な効果がある。According to the present invention, since the exposure intensity and its distribution can be monitored at the same time as the resist is exposed to X-rays, there is a great effect on highly accurate control of resist pattern dimensions in X-ray lithography.
第１図は実施例１の強度モニタ一手段の構成図、第２図
は実施例２の強度モニタ一手段の構成図。
１・・・Ｓｉウェーハ、２・・・Ｘ線レジスト、３・・
・メンブレン、４・・・吸収体、５・・・チャネルトロ
ン、６゜６′・・・Ｘ線、７・・・アンプ、８・・・電
圧計、２０・・・Ｂｅ膜、３０・・・Ａｕ膜、１８・・
・回転ミラー、１０・・・アンプ、１１・・・和算回路
、１２・・・電圧計、、′（□FIG. 1 is a configuration diagram of an intensity monitor means according to a first embodiment, and FIG. 2 is a configuration diagram of an intensity monitor means according to a second embodiment. 1...Si wafer, 2...X-ray resist, 3...
・Membrane, 4...Absorber, 5...Channeltron, 6°6'...X-ray, 7...Amplifier, 8...Voltmeter, 20...Be film, 30...・Au film, 18...
・Rotating mirror, 10...Amplifier, 11...Summing circuit, 12...Voltmeter,,'(□
Claims (1)
で用いるＸ線露光装置において、該Ｘ線の存在領域にあ
るＸ線吸収体から発せられる電子を検出することによつ
て該Ｘ線の強度をモニターする手段を有することを特徴
とするＸ線露光装置。 ２、前記Ｘ線吸収体が前記Ｘ線マスクの吸収体パターン
であることを特徴とする特許請求の範囲第１項記載のＸ
線露光装置。 ３、前記Ｘ線吸収体が、前記Ｘ線の存在領域にある重金
属膜であることを特徴とする特許請求の範囲第１項記載
のＸ線露光装置。 ４、前記Ｘ線吸収体の厚さが５〜１，０００Åであるこ
とを特徴とする特許請求の範囲第１〜３項いずれかに記
載のＸ線露光装置。[Claims] 1. In an X-ray exposure device used in X-ray lithography that transfers a pattern on an X-ray mask, by detecting electrons emitted from an X-ray absorber in an area where the X-rays exist. An X-ray exposure apparatus characterized by having means for monitoring the intensity of the X-rays. 2. The X-ray device according to claim 1, wherein the X-ray absorber is an absorber pattern of the X-ray mask.
Line exposure equipment. 3. The X-ray exposure apparatus according to claim 1, wherein the X-ray absorber is a heavy metal film located in the region where the X-rays exist. 4. The X-ray exposure apparatus according to any one of claims 1 to 3, wherein the X-ray absorber has a thickness of 5 to 1,000 Å.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61215716A JPS6372116A (en) | 1986-09-16 | 1986-09-16 | X-ray exposure device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61215716A JPS6372116A (en) | 1986-09-16 | 1986-09-16 | X-ray exposure device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6372116A true JPS6372116A (en) | 1988-04-01 |
Family
ID=16676992
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61215716A Pending JPS6372116A (en) | 1986-09-16 | 1986-09-16 | X-ray exposure device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6372116A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02100311A (en) * | 1988-10-06 | 1990-04-12 | Canon Inc | Alignment device and sor-x ray exposure device provided with same |
| EP0987601A2 (en) * | 1998-09-17 | 2000-03-22 | Nikon Corporation | An exposure apparatus and exposure method using same |
| JP2002141280A (en) * | 2000-08-25 | 2002-05-17 | Asm Lithography Bv | Flat projector, manufacturing method for element and element manufactured thereby |
| EP1331519A3 (en) * | 2002-01-29 | 2004-01-21 | Canon Kabushiki Kaisha | Exposure control |
| US7686505B2 (en) | 2005-02-01 | 2010-03-30 | Carl Zeiss Smt Ag | Method and system for indirect determination of local irradiance in an optical system |
| US7875865B2 (en) | 2005-11-10 | 2011-01-25 | Carl Zeiss Smt Ag | EUV illumination system with a system for measuring fluctuations of the light source |
-
1986
- 1986-09-16 JP JP61215716A patent/JPS6372116A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02100311A (en) * | 1988-10-06 | 1990-04-12 | Canon Inc | Alignment device and sor-x ray exposure device provided with same |
| EP0987601A2 (en) * | 1998-09-17 | 2000-03-22 | Nikon Corporation | An exposure apparatus and exposure method using same |
| EP0987601A3 (en) * | 1998-09-17 | 2001-10-04 | Nikon Corporation | An exposure apparatus and exposure method using same |
| US6842500B1 (en) | 1998-09-17 | 2005-01-11 | Nikon Corporation | Exposure apparatus and exposure method using same |
| JP2002141280A (en) * | 2000-08-25 | 2002-05-17 | Asm Lithography Bv | Flat projector, manufacturing method for element and element manufactured thereby |
| EP1331519A3 (en) * | 2002-01-29 | 2004-01-21 | Canon Kabushiki Kaisha | Exposure control |
| US6825481B2 (en) | 2002-01-29 | 2004-11-30 | Canon Kabushiki Kaisha | Exposure apparatus, control method thereof, and device manufacturing method using the same |
| US7686505B2 (en) | 2005-02-01 | 2010-03-30 | Carl Zeiss Smt Ag | Method and system for indirect determination of local irradiance in an optical system |
| US8454230B2 (en) | 2005-02-01 | 2013-06-04 | Carl Zeiss Smt Gmbh | Method and system for indirect determination of local irradiance in an optical system |
| US7875865B2 (en) | 2005-11-10 | 2011-01-25 | Carl Zeiss Smt Ag | EUV illumination system with a system for measuring fluctuations of the light source |
| US8513628B2 (en) | 2005-11-10 | 2013-08-20 | Carl Zeiss Smt Gmbh | EUV illumination system with a system for measuring fluctuations of the light source |
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