JPS6370992A - Manufacture of magnetic bubble memory element - Google Patents

Abstract

PURPOSE:To form a metallic pattern in which an angle formed by a side face and a magnetic thin film is obtuse by coating a resin layer on a resist pattern and on an exposed metallic layer, and controlling partially etching speed at the time that the metallic pattern is formed. CONSTITUTION:The metallic layer 31, made of a conductive material, is formed on the magnetic thin film 1 being apart through a first insulating layer 41 made of the film of an SiO2, and the resist pattern 32 is formed on the metallic layer 31 by using a photolithography technique. Next, the resin layer 33 is coated on the resist pattern 32 and the exposed metallic layer 31 by a spin coating method, etc. Afterwards, when the resin layer 33, the resist pattern 32 and the exposed part of the metallic layer 31 are removed by a dry etching method, the etching speed of the metallic layer 31, adjacent to the resist pattern 32, comes slow, then the metallic pattern 3, in which the angle formed by the side face and the magnetic thin film is obtuse, can be formed.

Description

[Detailed Description of the Invention] [Summary] In the normal dry etching method, the angle between the side surface of the full-level pattern and the substrate becomes steep, making it difficult to flatten the soft magnetic material pattern formed thereon.

Therefore, a step is added to soften the angle between the side surface of the metal pattern and the substrate, thereby making it easier to flatten the soft magnetic material pattern formed thereon.

[Industrial application field]

The present invention relates to a method of manufacturing a magnetic bubble memory element having a transfer path made of a soft magnetic material pattern.

FIG. 2 is a cross-sectional view showing the layer structure of the magnetic bubble memory element.

The soft magnetic material transfer path type magnetic bubble memory element is shown in Figure 2 (a).
) As shown in FIG. A soft magnetic material transfer path 2 including a connection pattern 23 connecting a gate pattern 21 and an information storage pattern 22, etc., and a magnetic thin film 1
A control conductor 3 is formed between the control conductor 3 and the functional gate pattern 21 to control the functional gate, a first insulating layer 41 insulates the magnetic thin film 1 and the control conductor 3, and a control conductor 3 formed in the recess created by the control conductor 3. second insulating layer 42, soft magnetic material transfer path 2
Control conductor 3 and functional gate pattern 21 formed under
or between the magnetic thin film 1 and the information storage pattern 22.

In such a magnetic bubble memory element, if the angle θ between the magnetic thin film 1 and the side surface of the control conductor 3 is steep as shown in FIG. A fault section 21a that changes rapidly occurs,
The transfer characteristics of magnetic bubbles are inhibited because the influence of perpendicular magnetization is strong in that part. Therefore, as shown in the figure, a second insulating layer 42 is usually formed in the recess created by the control conductor 3, and a functional gate pattern is formed. However, the area in which functional gate patterns and connection patterns can be formed is limited in high-density magnetic bubble memory elements, and by forming the insulating layer 42, the height changes are made gentle. Even if it is made gentler, there is a limit to the planarization of the functional gate pattern in a limited area.

In such a high-density magnetic bubble memory element, as shown in FIG. 2('b), if the angle θ between the magnetic thin film 1 and the side surface of the control conductor 3 can be made gentler, the inclination of the fault section 21a can be reduced. becomes even more gradual, and the influence of perpendicular magnetization can be weakened. Furthermore, if the slope of the fault section 21a is made the same as before, it becomes possible to make the second insulating layer 42 thinner, and the formation area of the connection pattern 23 is reduced, which is useful for increasing the density of the magnetic bubble memory element. It will be advantageous.

Therefore, in manufacturing high-density magnetic bubble memory elements, it is desirable to develop a manufacturing method that reduces the angle between the side surface of the metal pattern and the magnetic thin film when forming a metal pattern made of a conductor or soft magnetic material. It is rare.

[Conventional technology]

FIG. 3 is a sectional view showing a conventional manufacturing method.

In manufacturing magnetic bubble memory elements, metal patterns are formed using dry etching methods, such as ion milling, which can form highly accurate metal patterns.

That is, as shown in FIG. 3(a), the first
A metal layer 31 made of a conductor is formed on the hill of the magnetic thin film 1 via an insulation N41, and a resist pattern 32 is formed on the metal layer 31 using photolithography.

In the conventional manufacturing method, the metal layer 31 is directly etched through the resist pattern 32, and as shown in FIG.
It is removed by etching to form the control conductor 3.

[Problem that the invention seeks to solve]

However, in the conventional method of directly etching the metal layer through a resist pattern, the angle θ between the side surface of the metal pattern 3 and the magnetic thin film 1 is determined by the etching conditions, and a metal pattern with a steep or gentle angle cannot always be formed. . If this angle becomes steep, the first insulating layer 41 will be etched near the base as shown in Figure 3, and if the first insulating layer 41 is thin, the magnetic thin film 1 will be etched, resulting in magnetic bubbles. There was a problem that the propagation characteristics of

[Means for solving problems]

FIG. 1 is a sectional view showing the manufacturing method according to the present invention. The same objects are represented by the same symbols throughout the figures.

The above problem arises when forming a metal pattern made of a conductor or soft magnetic material by a dry etching method such as ion milling. A magnetic bubble memory element according to the present invention, in which a resist pattern 32 is formed using a resist pattern 32, a resin layer 33 is then deposited on the resist pattern 32 and the exposed metal N31, and then a metal pattern 3 is formed by a dry etching method. The problem is solved by the manufacturing method.

[Effect]

In Figure 1, a resin layer is deposited on the resist pattern and the exposed metal layer, and by partially controlling the etching speed when forming the metal pattern, the angle between the side surface and the magnetic thin film is gentle. It is possible to form various metal patterns.

〔Example〕

An embodiment of the present invention will be described below with reference to FIG.

As shown in FIG. A resist pattern 32 is formed using lithography technology.

Next, a resin layer 33 is deposited on the resist pattern 32 and the exposed metal layer 31 by a spin cord method or the like as shown in FIG. Note that excellent results can be obtained by using a resin layer with a low viscosity film such as a resist film.

After that, when the exposed parts of the resin layer 33, the resist pattern 32, and the metal layer 31 are removed by dry etching, the etching speed of the metal layer 31 adjacent to the resist pattern 32 is increased by the resin layer adhered to the side surface of the resist pattern 32. As shown in FIG. 1 (C1), the metal pattern 3 has a gentle angle θ between the side surface and the magnetic thin film.
can be formed.

Furthermore, since the angle between the side surface and the magnetic thin film becomes gentler, the effect of etching the insulating layer near the root is weakened, as shown in Figure 1 (C), and the phenomenon of the magnetic thin film being etched is completely eliminated. Can be done.

〔Effect of the invention〕

As described above, the present invention provides a method for manufacturing a magnetic bubble memory element in which the angle formed between the side surface of the metal pattern and the magnetic thin film is gentle when forming a metal pattern made of a conductor or a soft magnetic material. Can be done.

[Brief explanation of the drawing]

FIG. 1 is a sectional view showing a manufacturing method according to the present invention, FIG. 2 is a sectional view showing a layer structure of a magnetic bubble memory element, and FIG. 3 is a sectional view showing a conventional manufacturing method. In the figure, 1 is a magnetic thin film, 3 is a metal pattern, 31 is a metal layer, 32 is a resist pattern, 33 is a resin layer,
41 represents an insulating layer, respectively. (a) (b) (C) 1st area (aan (I)) 〃 Jiki Baguru no Moso Hatako Q4 composition) Appeasement n Kae deaf 2 (b) ゝθ Bonshi Rashi 7 method? Soukumei 4th 5th concave

Claims (1)

[Claims] By dry etching methods such as ion milling,
When forming a metal pattern made of a conductor or soft magnetic material, first, a resist pattern (32) is formed on the metal layer (31) made of a conductor or soft magnetic material using photolithography technology, and then the resist pattern (32) is formed on the metal layer (31) made of a conductor or soft magnetic material. A magnetic bubble memory element characterized in that a resin layer (33) is deposited on the resist pattern (32) and the exposed metal layer (31), and then a metal pattern (3) is formed by dry etching. manufacturing method.