JPS6367954U - - Google Patents

Info

Publication number

JPS6367954U

JPS6367954U JP16277786U JP16277786U JPS6367954U JP S6367954 U JPS6367954 U JP S6367954U JP 16277786 U JP16277786 U JP 16277786U JP 16277786 U JP16277786 U JP 16277786U JP S6367954 U JPS6367954 U JP S6367954U

Authority

JP

Japan

Prior art keywords

silicon diaphragm

pedestal

electrode

bonded

pressure sensor

Prior art date

1986-10-23

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Pending

Links

• Espacenet
• Global Dossier
• Discuss

• XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
• 239000004065 semiconductor Substances 0.000 claims description 5
• 229910052710 silicon Inorganic materials 0.000 claims description 5
• 239000010703 silicon Substances 0.000 claims description 5
• NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical group C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 3
• 239000000463 material Substances 0.000 claims description 2
• 230000001681 protective effect Effects 0.000 description 2
• 239000012790 adhesive layer Substances 0.000 description 1
• 239000004020 conductor Substances 0.000 description 1
• 238000009792 diffusion process Methods 0.000 description 1
• 239000010410 layer Substances 0.000 description 1
• 238000005476 soldering Methods 0.000 description 1
• 239000000126 substance Substances 0.000 description 1